Electronic structure and work function of metal gate Mo–W system

2007 ◽  
Vol 91 (9) ◽  
pp. 092106 ◽  
Author(s):  
H. R. Gong ◽  
Kyeongjae Cho
Keyword(s):  
Electronic Structure ◽  
Work Function ◽  
Metal Gate

scholarly journals Effect of the sample work function on alkali metal dosing induced electronic structure change

2021 ◽  
pp. 147045
Author(s):  
Saegyeol Jung ◽  
Yukiaki Ishida ◽  
Minsoo Kim ◽  
Masamichi Nakajima ◽  
Shigeyuki Ishida ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Alkali Metal ◽  
Work Function ◽  
Structure Change

Effective Work-Function Modulation by Aluminum-Ion Implantation for Metal-Gate Technology $(\hbox{Poly-Si/TiN/SiO}_{2})$

2007 ◽  
Vol 28 (12) ◽  
pp. 1089-1091 ◽  
Author(s):  
R. Singanamalla ◽  
H. Y. Yu ◽  
B. Van Daele ◽  
S. Kubicek ◽  
K. De Meyer
Keyword(s):  
Ion Implantation ◽  
Work Function ◽  
Metal Gate ◽  
Effective Work ◽  
Effective Work Function ◽  
Aluminum Ion

Investigating doping effects on high-κ metal gate stack for effective work function engineering

2013 ◽  
Vol 88 ◽  
pp. 21-26 ◽  
Author(s):  
C. Leroux ◽  
S. Baudot ◽  
M. Charbonnier ◽  
A. Van Der Geest ◽  
P. Caubet ◽  
...  
Keyword(s):  
Work Function ◽  
Metal Gate ◽  
Gate Stack ◽  
Effective Work ◽  
Effective Work Function ◽  
Doping Effects

scholarly journals Performance Evaluation of FD-SOI MOSFETS for Different Metal Gate Work Function

2011 ◽  
Vol 2 (1) ◽  
pp. 11-24 ◽  
Author(s):  
Deepesh Ranka ◽  
Ashwani K. Rana ◽  
Rakesh Kumar Yadav ◽  
Kamalesh Yadav ◽  
Devendra Giri
Keyword(s):  
Performance Evaluation ◽  
Work Function ◽  
Metal Gate ◽  
Gate Work Function

scholarly journals Realization of N-Type Semiconducting of Phosphorene through Surface Metal Doping and Work Function Study

2018 ◽  
Vol 2018 ◽  
pp. 1-9 ◽  
Author(s):  
Haocheng Sun ◽  
Yuan Shang ◽  
Yanmei Yang ◽  
Meng Guo
Keyword(s):  
Electronic Structure ◽  
Work Function ◽  
Valence Electron ◽  
Electron Configuration ◽  
Impurity States ◽  
Cu Doping ◽  
Na Doping ◽  
Surface Metal ◽  
Structure Engineering ◽  
Surface Metal Atom

Phosphorene becomes an important member of the layered nanomaterials since its discovery for the fabrication of nanodevices. In the experiments, pristine phosphorene shows p-type semiconducting with no exception. To reach its full capability, n-type semiconducting is a necessity. Here, we report the electronic structure engineering of phosphorene by surface metal atom doping. Five metal elements, Cu, Ag, Au, Li, and Na, have been considered which could form stable adsorption on phosphorene. These elements show patterns in their electron configuration with one valence electron in their outermost s-orbital. Among three group 11 elements, Cu can induce n-type degenerate semiconducting, while Ag and Au can only introduce localized impurity states. The distinct ability of Cu, compared to Ag and Au, is mainly attributed to the electronegativity. Cu has smaller electronegativity and thus denotes its electron to phosphorene, upshifting the Fermi level towards conduction band, resulting in n-type semiconducting. Ag and Au have larger electronegativity and hardly transfer electrons to phosphorene. Parallel studies of Li and Na doping support these findings. In addition, Cu doping effectively regulates the work function of phosphorene, which gradually decreases upon increasing Cu concentration. It is also interesting that Au can hardly change the work function of phosphorene.

Oxygen incorporation in TiN for metal gate work function tuning with a replacement gate integration approach

2010 ◽  
Vol 87 (9) ◽  
pp. 1805-1807 ◽  
Author(s):  
Zilan Li ◽  
Tom Schram ◽  
Thomas Witters ◽  
Joshua Tseng ◽  
Stefan De Gendt ◽  
...  
Keyword(s):  
Work Function ◽  
Metal Gate ◽  
Oxygen Incorporation ◽  
Integration Approach ◽  
Work Function Tuning ◽  
Gate Work Function
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