Temperature-dependent leakage mechanisms of Pt∕BiFeO3∕SrRuO3 thin film capacitors

H. Yang; M. Jain; N. A. Suvorova; H. Zhou; H. M. Luo; D. M. Feldmann; P. C. Dowden; R. F. DePaula; S. R. Foltyn; Q. X. Jia

doi:10.1063/1.2772666

Temperature-dependent leakage mechanisms of Pt∕BiFeO3∕SrRuO3 thin film capacitors

Applied Physics Letters ◽

10.1063/1.2772666 ◽

2007 ◽

Vol 91 (7) ◽

pp. 072911 ◽

Cited By ~ 146

Author(s):

H. Yang ◽

M. Jain ◽

N. A. Suvorova ◽

H. Zhou ◽

H. M. Luo ◽

...

Keyword(s):

Thin Film ◽

Temperature Dependent ◽

Thin Film Capacitors ◽

Srruo3 Thin Film

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Large domain-wall currents in epitaxial Au/BiFeO3/SrRuO3 thin-film capacitors with modulated oxygen vacancy and wall densities

Ceramics International ◽

10.1016/j.ceramint.2021.04.293 ◽

2021 ◽

Author(s):

Qiqi Peng ◽

Xu Jiang ◽

Yifan Chen ◽

Wei Zhang ◽

Jun Jiang ◽

...

Keyword(s):

Thin Film ◽

Oxygen Vacancy ◽

Domain Wall ◽

Large Domain ◽

Thin Film Capacitors ◽

Srruo3 Thin Film

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Frequency and temperature-dependent dielectric properties of BaTiO3 thin film capacitors studied by complex impedance spectroscopy

Physica B Condensed Matter ◽

10.1016/j.physb.2006.09.021 ◽

2007 ◽

Vol 391 (2) ◽

pp. 212-221 ◽

Cited By ~ 13

Author(s):

Y.K. Vayunandana Reddy ◽

D. Mergel

Keyword(s):

Thin Film ◽

Dielectric Properties ◽

Impedance Spectroscopy ◽

Complex Impedance ◽

Complex Impedance Spectroscopy ◽

Temperature Dependent ◽

Thin Film Capacitors ◽

Batio3 Thin Film

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Progressive Loss of Ferroelectricity Under Bipolar Pulsed Fields and Experimental Determination of Non-Switchable Polarization in Au/Ba0.5Sr0.5-TiO3/SrRuO3 Thin-Film Capacitors

Integrated Ferroelectrics ◽

10.1080/10584580490458720 ◽

2004 ◽

Vol 61 (1) ◽

pp. 111-115

Author(s):

A. Q JIANG ◽

J. F SCOTT ◽

J. M GREGG

Keyword(s):

Thin Film ◽

Experimental Determination ◽

Progressive Loss ◽

Thin Film Capacitors ◽

Srruo3 Thin Film ◽

Switchable Polarization ◽

Pulsed Fields

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Asymmetric properties of Pb(Zr,Ti)O3 thin film capacitors with conducting oxides

Journal de Physique IV (Proceedings) ◽

10.1051/jp4:1998918 ◽

1998 ◽

Vol 08 (PR9) ◽

pp. Pr9-109-Pr9-112 ◽

Cited By ~ 3

Author(s):

C. H. Choi ◽

J. Lee

Keyword(s):

Thin Film ◽

Conducting Oxides ◽

Thin Film Capacitors

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Growth temperature-dependent morphological, optical, and electrical study of SnO2 thin film by atomic layer deposition

Materials Chemistry and Physics ◽

10.1016/j.matchemphys.2021.124584 ◽

2021 ◽

pp. 124584

Author(s):

Umme Farva ◽

Jeha Kim

Keyword(s):

Thin Film ◽

Atomic Layer Deposition ◽

Growth Temperature ◽

Atomic Layer ◽

Sno2 Thin Film ◽

Temperature Dependent ◽

Layer Deposition ◽

Electrical Study

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Temperature-dependent ambipolar electrical characteristics of pentacene-based thin-film transistors: The impact of opposite-sign charge carriers

Organic Electronics ◽

10.1016/j.orgel.2015.06.021 ◽

2015 ◽

Vol 25 ◽

pp. 74-78 ◽

Cited By ~ 1

Author(s):

Tsung-Jun Ho ◽

Horng-Long Cheng ◽

Liang-Yun Chiu ◽

Wei-Yang Chou ◽

Fu-Ching Tang

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Opposite Sign ◽

Charge Carriers ◽

Electrical Characteristics ◽

Temperature Dependent ◽

The Impact

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A self‐consistent analysis of temperature‐dependent field‐effect measurements in hydrogenated amorphous silicon thin‐film transistors

Journal of Applied Physics ◽

10.1063/1.337407 ◽

1986 ◽

Vol 60 (2) ◽

pp. 643-649 ◽

Cited By ~ 37

Author(s):

R. E. I. Schropp ◽

J. Snijder ◽

J. F. Verwey

Keyword(s):

Thin Film ◽

Amorphous Silicon ◽

Thin Film Transistors ◽

Field Effect ◽

Hydrogenated Amorphous Silicon ◽

Temperature Dependent ◽

Silicon Thin Film ◽

Self Consistent ◽

Hydrogenated Amorphous ◽

Dependent Field

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A new GaAs MMIC process technology using 0.5 mu m gate asymmetric LDD structure GaAs BP-MESFETs combined with high-dielectric-constant thin-film capacitors

Semiconductor Science and Technology ◽

10.1088/0268-1242/10/11/017 ◽

1995 ◽

Vol 10 (11) ◽

pp. 1534-1540 ◽

Cited By ~ 7

Author(s):

M Nishitsuji ◽

T Uda ◽

T Yokoyama ◽

K Fujimoto ◽

K Nishii ◽

...

Keyword(s):

Thin Film ◽

Dielectric Constant ◽

High Dielectric Constant ◽

Process Technology ◽

Thin Film Capacitors ◽

High Dielectric

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Characterization of SrRuO3 thin film grown by laser ablation at temperatures above 400 °C

Journal of Applied Physics ◽

10.1063/1.1319323 ◽

2001 ◽

Vol 90 (1) ◽

pp. 162-166 ◽

Cited By ~ 22

Author(s):

Xiaodong Fang ◽

Takeshi Kobayashi

Keyword(s):

Thin Film ◽

Laser Ablation ◽

Srruo3 Thin Film

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Temperature-dependent charge injection and transport in pentacene thin-film transistors

Semiconductor Science and Technology ◽

10.1088/0268-1242/30/11/115020 ◽

2015 ◽

Vol 30 (11) ◽

pp. 115020 ◽

Cited By ~ 1

Author(s):

Dong Wook Kim ◽

Hyunji Shin ◽

Ji-Ho Park ◽

Jaehoon Park ◽

Jong Sun Choi

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Charge Injection ◽

Temperature Dependent

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