Forward current-voltage characteristics of an AlGaInP light-emitting diode

2007 ◽  
Vol 102 (4) ◽  
pp. 043706 ◽  
Author(s):  
N. C. Chen ◽  
Y. K. Yang ◽  
W. C. Lien ◽  
C. Y. Tseng
Keyword(s):  
Light Emitting Diode ◽  
Light Emitting ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

Tetraphenylmethane-Based 1,3,4-Oxadiazole as Electron Transporting Materials in Organic Light-Emitting Devices

1999 ◽  
Vol 598 ◽  
Author(s):  
Chin-Ti Chen ◽  
Tzu-Yao J. Lin ◽  
Hsiu-Chih Yeh ◽  
Li-Hsin Jan ◽  
Easwaramoorthy Balasubramaniam ◽  
...  
Keyword(s):  
Glass Phase ◽  
Molecular Design ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Organic Light Emitting Diode ◽  
Organic Light ◽  
Current Voltage ◽  
Electron Transporting Layer ◽  
Current Voltage Characteristics

ABSTRACTA series of tetrahedral tetramers of 2,5-diphenyl substituted 1,3,4-oxadiazole compounds were synthesized and characterized for electron-transporting layer (ETL) in organic light-emitting diode (OLED). The multiple-branch design of the oxadiazole tetramers intends to increase the melting temperature and to generate glass phase of the low molar mass derivative such as 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD). We observed temperatures of the glass phase transition for the oxadiazole tetramer with appropriate peripheral substituents, indicative of amorphous characteristics of the molecule in spite of highly symmetrical molecular framework. The luminescence-current-voltage characteristics of multilayer OLED devices containing the oxadiazole tetramer or PBD as ETL were examined to evaluate the efficiency of our multiple-branch molecular design.

scholarly journals Efficiency and Droop Improvement in GaN-Based High-Voltage Flip Chip LEDs

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Yen-Chih Chiang ◽  
Bing-Cheng Lin ◽  
Kuo-Ju Chen ◽  
Sheng-Huan Chiu ◽  
Chien-Chung Lin ◽  
...  
Keyword(s):  
High Voltage ◽  
Flip Chip ◽  
Light Emitting Diode ◽  
Bragg Reflector ◽  
Light Extraction ◽  
Efficiency Enhancement ◽  
Distributed Bragg Reflector ◽  
Light Emitting ◽  
Current Voltage ◽  
Current Voltage Characteristics

The GaN-based high-voltage flip chip light-emitting diode (HVFC-LED) is designed and developed for the purpose of efficiency enhancement. In our design, the distributed Bragg reflector (DBR) is deposited at the bonded substrate to increase the light extraction. After the flip chip process, the general current-voltage characteristics between the flip chip sample and the traditional sample are essentially the same. With the help of great thermal conductive silicon substrate and the bottom DBR, the HVFC-LED is able to enhance the power by 37.1% when compared to the traditional high-voltage LEDs. The wall-plug efficiencies of the HVFC-LED also show good droop reduction as high as 9.9% compared to the traditional devices.

Para-sexiphenyl-CdSe Nanocrystals Hybrid Light Emitting Diodes with Optimized Layer Thickness and Interfaces

2009 ◽  
Vol 1154 ◽  
Author(s):  
Clemens Simbrunner ◽  
Gerardo Hernandez-Sosa ◽  
Eugen Baumgartner ◽  
Günter Hesser ◽  
Jürgen Roither ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Spectral Response ◽  
Cdse Nanocrystals ◽  
Device Performance ◽  
Leakage Currents ◽  
Light Emitting ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
High Color Purity ◽  
Narrow Emission

AbstractCdSe/ZnS nanocrystals are embedded in para-sexiphenyl (p-6P) based hybrid light emitting diode devices providing red, green and blue (RGB) emission compatible to the HDTV color triangle. By structural and optical investigations the device parameters are optimized. The device performance is analyzed in respect to electrical and spectral response resulting in current-voltage characteristics with small leakage currents and low onset voltages. Furthermore the devices provide high color purity and stability which is demonstrated by their narrow emission line widths. All these results underline the ability of the presented device configuration to act as a future candidate for display applications.

Electrical Behavior I-V Theoretical-Experimental OLEDS

2014 ◽  
Vol 1613 ◽  
pp. 121-126
Author(s):  
José M. Burgoa ◽  
Cecilia González-Medina ◽  
Ramón Gómez-Aguilar ◽  
Jaime Ortiz-López
Keyword(s):  
Light Emitting Diode ◽  
Hole Injection ◽  
Software Environment ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Current Voltage ◽  
Polymer Semiconductor ◽  
Current Voltage Characteristics ◽  
Derivatives Of ◽  
Magnitude Difference

ABSTRACTWe develop a program (within MATLAB software environment) to numerically simulate current-voltage characteristics of a bilayer organic light-emitting diode (OLED). The program is based on the Poole-Frenkel and Schottky continuous quantum models which take into account the geometry of thin films and their emission parameters in the calculation of charge carrier and current density in organic materials. Simulations are performed for OLEDs with A/EML/C and A/HIL/EML/C architectures where A=anode, HIL=hole injection layer, EML=emissive layer and C=cathode. For EML we assume MEH-PPV and MDMO-PPV derivatives of poly-para-phenylene-vinylene (PPV) polymer semiconductor, and for HIL we use PEDOT:PSS. The results of simulation are compared with experimental results obtained from actual OLED devices constructed in our laboratory. For comparison we also use the commercial software SimOLED to simulate the devices under similar architectures. We find in general a fair agreement between the simulated and measured behavior except for a few orders of magnitude difference in the current.

A High Performance Optically Gated Heterostructure Thyristor Passivated with LT-GaAs

1991 ◽  
Vol 241 ◽  
Author(s):  
J. H. Zhao ◽  
T. Burke ◽  
D. Larson ◽  
M. Weiner ◽  
A. Chin ◽  
...  
Keyword(s):  
High Performance ◽  
Light Emitting Diode ◽  
Dissipated Energy ◽  
Blocking Layer ◽  
Light Emitting ◽  
Current Voltage ◽  
Switched Current ◽  
Carrier Tunneling ◽  
Current Voltage Characteristics ◽  
Lt Gaas

ABSTRACTA high performance, Al0.3Ga0.7As/GaAs based, optically gated thyristor with a bulk semi-insulating(SI) GaAs 650 μm in thickness as the voltage blocking layer has been fabricated and characterized for high power pulsed switching applications. Low temperature(LT) GaAs was used to passivate the device surface and was found to greatly improve the switch hold-off voltage. The switched current as a function of bias up to 2,200 V (34 kV/cm) has been tested and the maximum switched current was 240 A with a di/dt equal to 2.02×1010 A/s. The forward dynamic current-voltage characteristics have been measured and the dissipated energy per switching determined. It was found that very sensitive triggering of the switch is possible, even with a light emitting diode operating in the sub-mW range, when the thyristor is reverse biased. The sensitive triggering is a result of the carrier tunneling through the reverse biased pn junctions.

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