Current transport mechanism of Au∕Ni∕GaN Schottky diodes at high temperatures

2007 ◽  
Vol 91 (7) ◽  
pp. 072109 ◽  
Author(s):  
S. Huang ◽  
B. Shen ◽  
M. J. Wang ◽  
F. J. Xu ◽  
Y. Wang ◽  
...  
Keyword(s):  
High Temperatures ◽  
Transport Mechanism ◽  
Schottky Diodes ◽  
Current Transport ◽  
Current Transport Mechanism

Current Transport Mechanism of High-Performance Novel GaN MIS Diode

2021 ◽  
Vol 42 (3) ◽  
pp. 304-307
Author(s):  
Tao Zhang ◽  
Yanni Zhang ◽  
Jincheng Zhang ◽  
Xiangdong Li ◽  
Yueguang Lv ◽  
...  
Keyword(s):  
Transport Mechanism ◽  
High Performance ◽  
Current Transport ◽  
Current Transport Mechanism ◽  
Mis Diode

Temperature dependent current transport mechanism in osmium-doped perovskite yttrium manganite-based heterojunctions

2019 ◽  
Vol 125 (21) ◽  
pp. 214104 ◽  
Author(s):  
F. M. Coșkun ◽  
O. Polat ◽  
M. Coșkun ◽  
A. Turut ◽  
M. Caglar ◽  
...  
Keyword(s):  
Transport Mechanism ◽  
Current Transport ◽  
Temperature Dependent ◽  
Current Transport Mechanism

Current-transport mechanism in Au/V-doped PVC+TCNQ/p-Si structures

2015 ◽  
Vol 29 (13) ◽  
pp. 1550076 ◽  
Author(s):  
H. Tecimer ◽  
Ö. Vural ◽  
A. Kaya ◽  
Ş. Altındal
Keyword(s):  
Temperature Coefficient ◽  
Transport Mechanism ◽  
Forward Bias ◽  
Thermionic Emission ◽  
Negative Temperature ◽  
Positive Temperature ◽  
Current Transport ◽  
Insulator Layer ◽  
Zero Bias ◽  
Current Transport Mechanism

The forward and reverse bias current–voltage (I–V) characteristics of Au/V-doped polyvinyl chloride+Tetracyanoquino dimethane/porous silicon (PVC+TCNQ/p-Si) structures have been investigated in the temperature range of 160–340 K. The zero bias or apparent barrier height (BH) (Φ ap = Φ Bo ) and ideality factor (n ap = n) were found strongly temperature dependent and the value of n ap decreases, while the Φ ap increases with the increasing temperature. Also, the Φ ap versus T plot shows almost a straight line which has positive temperature coefficient and it is not in agreement with the negative temperature coefficient of ideal diode or forbidden bandgap of Si (α Si = -4.73×10-4 eV/K ). The high value of n cannot be explained only with respect to interfacial insulator layer and interface traps. In order to explain such behavior of Φ ap and n ap with temperature, Φ ap Versus q/2kT plot was drawn and the mean value of (Φ Bo ) and standard deviation (σs) values found from the slope and intercept of this plot as 1.176 eV and 0.152 V, respectively. Thus, the modified ( ln (Io/T2)-(qσs)2/2(kT)2 versus (q/kT) plot gives the Φ Bo and effective Richardson constant A* as 1.115 eV and 31.94 A ⋅(cm⋅K)-2, respectively. This value of A*( = 31.94 A⋅( cm ⋅K)-2) is very close to the theoretical value of 32 A ⋅(cm⋅K)-2 for p-Si. Therefore, the forward bias I–V–T characteristics confirmed that the current-transport mechanism (CTM) in Au/V-doped PVC+TCNQ/p-Si structures can be successfully explained in terms of the thermionic emission (TE) mechanism with a Gaussian distribution (GD) of BHs at around mean BH.

Sign in / Sign up

Export Citation Format

Share Document