scholarly journals Structural relaxation and self-diffusion in covalent amorphous solids: Silicon nitride as a model system

2007 ◽  
Vol 102 (4) ◽  
pp. 043516 ◽  
Author(s):  
H. Schmidt ◽  
W. Gruber ◽  
T. Gutberlet ◽  
M. Ay ◽  
J. Stahn ◽  
...  
2009 ◽  
Vol 289-292 ◽  
pp. 697-703 ◽  
Author(s):  
Erwin Hüger ◽  
Jochen Stahn ◽  
Udo Geckle ◽  
Michael Bruns ◽  
Harald Schmidt

Studies of self-diffusion in solids are presented, which are based on neutron reflectometry. For the application of this technique the samples under investigation are prepared in form of isotope heterostructures. These are nanometer sized thin films, which are chemically completely homogenous, but isotope modulated. Using this method, diffusion lengths in the order of 1 nm and below can be detected which allows to determine ultra low diffusivities in the order of 10-25 m2/s. For the model system amorphous silicon nitride we demonstrate how the structure of the isotope hetrostructures (triple layers or multilayers) influences the efficiency of diffusivity determination.


Author(s):  
Yanqin Zhai ◽  
Peng Luo ◽  
Michihiro Nagao ◽  
Kenji Nakajima ◽  
Tatsuya Kikuchi ◽  
...  

2-propanol was investigated, in both the liquid and supercooled states, as a model system to study how hydrogen bonds affect the structural relaxation and the dynamics of mesoscale structures, of...


1976 ◽  
Vol 65 (7) ◽  
pp. 2668-2671 ◽  
Author(s):  
Kazunori Kijima ◽  
Shin‐ichi Shirasaki

1988 ◽  
Vol 105-106 ◽  
pp. 47-54 ◽  
Author(s):  
Kirsten P. Kunz ◽  
Vinod K. Sarin ◽  
Robert F. Davis ◽  
Scott R. Bryan

1993 ◽  
Vol 321 ◽  
Author(s):  
Jung H. Shin ◽  
Harry A. Atwater

ABSTRACTA general approach to the dynamics of structural relaxation in amorphous solids is developed. A form of the recombination kinetics of defects is chosen which removes the ad hoc assumption made in previous theories that defects recombine only with others of identical activation energy. The generalized theory is tested quantitatively by modelling the structural relaxation of amorphous silicon, and comparing the results with the experimental data on structural relaxation. It is found that the generalized theory is necessary in order to accurately describe the time-resolved relaxation data. The generalized theory is also applied to estimate the effect of irradiation on the nucleation kinetics of crystal silicon, and is found to agree well with experimental data.


1986 ◽  
Vol 57 (20) ◽  
pp. 2481-2484 ◽  
Author(s):  
Detlef Dürr ◽  
Sheldon Goldstein ◽  
Joel L. Lebowitz
Keyword(s):  

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