scholarly journals Effect of GaP strain compensation layers on rapid thermally annealed InGaAs∕GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition

2007 ◽  
Vol 91 (7) ◽  
pp. 073515 ◽  
Author(s):  
L. Fu ◽  
I. McKerracher ◽  
H. H. Tan ◽  
C. Jagadish ◽  
N. Vukmirović ◽  
...  
Sign in / Sign up

Export Citation Format

Share Document