Optical investigation of p-type ZnO epilayers doped with different phosphorus concentrations by radio-frequency magnetron sputtering

2007 ◽  
Vol 91 (6) ◽  
pp. 061903 ◽  
Author(s):  
B. J. Kwon ◽  
H. S. Kwack ◽  
S. K. Lee ◽  
Y. H. Cho ◽  
D. K. Hwang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Radio Frequency Magnetron ◽  
Optical Investigation ◽  
Radio Frequency Magnetron Sputtering ◽  
P Type

Microstructural properties of phosphorus-doped p-type ZnO grown by radio-frequency magnetron sputtering

2008 ◽  
Vol 93 (11) ◽  
pp. 111905 ◽  
Author(s):  
Min-Suk Oh ◽  
Dae-Kue Hwang ◽  
Yong-Seok Choi ◽  
Jang-Won Kang ◽  
Seong-Ju Park ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Radio Frequency Magnetron ◽  
Microstructural Properties ◽  
Radio Frequency Magnetron Sputtering ◽  
P Type ◽  
Phosphorus Doped

scholarly journals Arsenic doped p-type zinc oxide films grown by radio frequency magnetron sputtering

2009 ◽  
Vol 106 (7) ◽  
pp. 073709 ◽  
Author(s):  
J. C. Fan ◽  
C. Y. Zhu ◽  
S. Fung ◽  
Y. C. Zhong ◽  
K. S. Wong ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Oxide Films ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Zinc Oxide Films ◽  
P Type

scholarly journals Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi2 Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering

2017 ◽  
Vol 2017 ◽  
pp. 1-8 ◽  
Author(s):  
Phongsaphak Sittimart ◽  
Adison Nopparuchikun ◽  
Nathaporn Promros
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Dark Current ◽  
Low Temperatures ◽  
Series Resistance ◽  
Thermionic Emission ◽  
Radio Frequency Magnetron ◽  
Dark Current Density ◽  
Radio Frequency Magnetron Sputtering ◽  
P Type

In this study, n-type β-FeSi2/p-type Si heterojunctions, inside which n-type β-FeSi2 films were epitaxially grown on p-type Si(111) substrates, were created using radio frequency magnetron sputtering at a substrate temperature of 560°C and Ar pressure of 2.66×10-1 Pa. The heterojunctions were measured for forward and reverse dark current density-voltage curves as a function of temperature ranging from 300 down to 20 K for computation of heterojunction parameters using the thermionic emission (TE) theory and Cheung’s and Norde’s methods. Computation using the TE theory showed that the values of ideality factor (n) were 1.71 at 300 K and 16.83 at 20 K, while the barrier height (ϕb) values were 0.59 eV at 300 K and 0.06 eV at 20 K. Both of the n and ϕb values computed using the TE theory were in agreement with those computed using Cheung’s and Norde’s methods. The values of series resistance (Rs) computed at 300 K and 20 K by Norde’s method were 10.93 Ω and 0.15 MΩ, respectively, which agreed with the Rs values found through computation by Cheung’s method. The dramatic increment of Rs value at low temperatures was likely attributable to the increment of n value at low temperatures.

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