Improved performance of In0.6Ga0.4As∕AlAs0.67Sb0.33∕InP quantum cascade lasers by introduction of AlAs barriers in the active regions

2007 ◽  
Vol 91 (5) ◽  
pp. 051123 ◽  
Author(s):  
D. G. Revin ◽  
J. W. Cockburn ◽  
M. J. Steer ◽  
R. J. Airey ◽  
M. Hopkinson ◽  
...  
Keyword(s):  
Quantum Cascade Lasers ◽  
Active Regions ◽  
Quantum Cascade ◽  
Improved Performance ◽  
Cascade Lasers

scholarly journals Terahertz quantum cascade lasers with thin resonant-phonon depopulation active regions and surface-plasmon waveguides

2013 ◽  
Vol 113 (11) ◽  
pp. 113110 ◽  
Author(s):  
M. Salih ◽  
P. Dean ◽  
A. Valavanis ◽  
S. P. Khanna ◽  
L. H. Li ◽  
...  
Keyword(s):  
Surface Plasmon ◽  
Quantum Cascade Lasers ◽  
Active Regions ◽  
Quantum Cascade ◽  
Cascade Lasers

Improved performance of GaAs-AlGaAs superlattice quantum cascade lasers beyond /spl lambda/=13 μm

2000 ◽  
Vol 12 (9) ◽  
pp. 1144-1146 ◽  
Author(s):  
S. Gianordoli ◽  
W. Schrenk ◽  
L. Hvozdara ◽  
N. Finger ◽  
K. Unterrainer ◽  
...  
Keyword(s):  
Quantum Cascade Lasers ◽  
Quantum Cascade ◽  
Improved Performance ◽  
Cascade Lasers

Towards a Si/SiGe Quantum Cascade Laser for Terahertz Applications

2004 ◽  
Vol 832 ◽  
Author(s):  
D.J. Paul ◽  
S.A. Lynch ◽  
P. Townsend ◽  
Z. Ikonic ◽  
R.W. Kelsall ◽  
...  
Keyword(s):  
Quantum Cascade Laser ◽  
Quantum Cascade Lasers ◽  
Active Regions ◽  
Optical Mode ◽  
Quantum Cascade ◽  
Ridge Waveguides ◽  
Terahertz Frequencies ◽  
Cascade Lasers ◽  
Calculated Model ◽  
Quantum Cascade Structures

ABSTRACTWhile electroluminescence has been demonstrated at terahertz frequencies from Si/SiGe quantum cascade emitters, to date no laser has been achieved due to poor vertical confinement of the optical mode. A method of increasing the vertical confinement of the optical mode for a Si/SiGe quantum cascade laser is demonstrated using silicon-on-silicide technology. Such technology is used with epitaxial growth to demonstrate a strain-symmetrised 600 period Si/SiGe quantum cascade interwell emission and the polarisation is used to demonstrate the optical confinement. Electroluminescence is demonstrated at ∼3 THz (∼100 μm) from an interwell quantum cascade emitter structure. Calculated model overlap and waveguide losses for ridge waveguides are comparable to values from GaAs quantum cascade lasers demonstrated at terahertz frequencies. The effects of high doping levels in Si/SiGe quantum cascade structures is also investigated with impurity emission demonstrated rather than intersubband emission for the highest doping levels used in the cascade active regions.

Al(In)As–(Ga)InAs strain-compensated active regions for injectorless quantum cascade lasers

2009 ◽  
Vol 311 (7) ◽  
pp. 1932-1934 ◽  
Author(s):  
Gerhard Boehm ◽  
Simeon Katz ◽  
Ralf Meyer ◽  
Markus-Christian Amann
Keyword(s):  
Quantum Cascade Lasers ◽  
Active Regions ◽  
Quantum Cascade ◽  
Cascade Lasers

scholarly journals Optical Properties of Active Regions in Terahertz Quantum Cascade Lasers

2016 ◽  
Vol 37 (7) ◽  
pp. 710-719 ◽  
Author(s):  
M. Dyksik ◽  
M. Motyka ◽  
W. Rudno-Rudziński ◽  
G. Sęk ◽  
J. Misiewicz ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Cascade Lasers ◽  
Active Regions ◽  
Quantum Cascade ◽  
Cascade Lasers
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