Electric-pulse-induced resistive switching effect enhanced by a ferroelectric buffer on the Pr0.7Ca0.3MnO3 thin film

2007 ◽  
Vol 91 (5) ◽  
pp. 052106 ◽  
Author(s):  
Z. W. Xing ◽  
N. J. Wu ◽  
A. Ignatiev
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Electric Pulse ◽  
Switching Effect ◽  
Resistive Switching Effect

Enhanced Resistive Switching Effect in Ag Nanoparticles Embedded in Graphene Oxide Thin Film

2020 ◽  
Vol 49 (8) ◽  
pp. 4872-4881
Author(s):  
Rakesh Singh ◽  
Ravi Kumar ◽  
Anil Kumar ◽  
Dinesh Kumar ◽  
Mukesh Kumar
Keyword(s):  
Thin Film ◽  
Graphene Oxide ◽  
Resistive Switching ◽  
Ag Nanoparticles ◽  
Oxide Thin Film ◽  
Switching Effect ◽  
Resistive Switching Effect

Resistive switching effect in thin-film heterojunctions based on electron-doped Nd2 − x Ce x CuO4 − y superconductor

2011 ◽  
Vol 75 (5) ◽  
pp. 605-608 ◽  
Author(s):  
N. A. Tulina ◽  
I. Yu. Borisenko ◽  
A. A. Ivanov ◽  
A. M. Ionov ◽  
I. M. Shmyt’ko ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Switching Effect ◽  
Resistive Switching Effect

Resistive switching effect of Ag/MoS2/FTO device

2015 ◽  
Vol 08 (01) ◽  
pp. 1550010 ◽  
Author(s):  
Bai Sun ◽  
Wenxi Zhao ◽  
Yonghong Liu ◽  
Peng Chen
Keyword(s):  
Resistive Switching ◽  
Electric Pulse ◽  
Metal Structure ◽  
Switching Behavior ◽  
Switching Effect ◽  
Bipolar Resistive Switching ◽  
Resistance Change ◽  
Non Volatile Memory ◽  
State Resistance ◽  
Resistive Switching Effect

The electric-pulse-driven resistance change of metal/oxides/metal structure, which is called resistive switching effect, is a fascinating phenomenon for the development of next generation non-volatile memory. In this work, an outstanding bipolar resistive switching behavior of Ag / MoS 2/fluorine-doped tin oxide (FTO) device is demonstrated. The device can maintain superior reversible stability over 100 cycles with an OFF/ON-state resistance ratio of about 103 at room temperature.

Multi-stage switching phenomenon in ultra-thin Ag films embedded into SrCoO3 multilayer films constructed resistive switching memory devices

2018 ◽  
Vol 11 (02) ◽  
pp. 1850038 ◽  
Author(s):  
Shuangsuo Mao ◽  
Xuejiao Zhang ◽  
Bai Sun ◽  
Bing Li ◽  
Shouhui Zhu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Multilayer Films ◽  
Text Structure ◽  
Switching Effect ◽  
Access Memory ◽  
Multi Stage ◽  
Switching Phenomenon ◽  
Resistance Random Access Memory ◽  
Resistive Switching Effect

In this work, Ti and SrCoO3 (SCO) have been used for preparing the resistance random access memory (RRAM) with Ti/(SCO/Ag)[Formula: see text]/SCO/Ti ([Formula: see text], 1, 2, 3) structures. It is found that the as-prepared device with Ti/SCO/Ti ([Formula: see text]) structure represents the nonobvious resistive switching effect. However, it displays a more obvious resistive switching effect in the Ti/SCO/Ag/SCO/Ti ([Formula: see text]) device. In particular, a multi-stage switching phenomenon is observed when ultra-thin Ag films was embedded into SrCoO3 multilayer films. Finally, the multi-stage switching effect is explained by the model of conductive filaments formed step-by-step.

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