scholarly journals Oxygen plasma treatment and postaging of pentacene field-effect transistors for improved mobility

2007 ◽  
Vol 91 (2) ◽  
pp. 023508 ◽  
Author(s):  
Kwonwoo Shin ◽  
Sang Yoon Yang ◽  
Chanwoo Yang ◽  
Hayoung Jeon ◽  
Chan Eon Park
Keyword(s):  
Plasma Treatment ◽  
Field Effect ◽  
Oxygen Plasma ◽  
Field Effect Transistors ◽  
Oxygen Plasma Treatment

scholarly journals Performance Enhancement of Electrospun IGZO-Nanofiber-Based Field-Effect Transistors with High-k Gate Dielectrics through Microwave Annealing and Postcalcination Oxygen Plasma Treatment

Nanomaterials ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 1804 ◽  
Author(s):  
Seong-Kun Cho ◽  
Won-Ju Cho
Keyword(s):  
Electrical Properties ◽  
Plasma Treatment ◽  
Field Effect ◽  
Oxygen Plasma ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Oxygen Plasma Treatment ◽  
Calcination Process ◽  
Microwave Annealing ◽  
High K

We investigated the effects of various high-k gate dielectrics as well as microwave annealing (MWA) calcination and a postcalcination oxygen plasma treatment on the electrical properties and stability of electrospun indium gallium zinc oxide (IGZO)-nanofiber (NF)-based field-effect transistors (FETs). We found that the higher the dielectric constant of the gate dielectric, the better the electric field is transferred, resulting in the better performance of the IGZO NF FET. In addition, the MWA-calcined IGZO NF FET was superior to the conventional furnace annealing-calcined device in terms of the electrical properties of the device and the operation of resistor-loaded inverter, and it was proved that the oxygen plasma treatment further improved the performance. The results of the gate bias temperature stress test confirmed that the MWA calcination process and postcalcination oxygen plasma treatment greatly improved the stability of the IGZO NF FET by reducing the number of defects and charge traps. This verified that the MWA calcination process and oxygen plasma treatment effectively remove the organic solvent and impurities that act as charge traps in the chemical analysis of NF using X-ray photoelectron spectroscopy. Furthermore, it was demonstrated through scanning electron microscopy and ultraviolet-visible spectrophotometer that the MWA calcination process and postcalcination oxygen plasma treatment also improve the morphological and optical properties of IGZO NF.

scholarly journals Charge neutral MoS2 field effect transistors through oxygen plasma treatment

2016 ◽  
Vol 120 (19) ◽  
pp. 195702 ◽  
Author(s):  
Rohan Dhall ◽  
Zhen Li ◽  
Ewa Kosmowska ◽  
Stephen B. Cronin
Keyword(s):  
Plasma Treatment ◽  
Field Effect ◽  
Oxygen Plasma ◽  
Field Effect Transistors ◽  
Oxygen Plasma Treatment

Multi-layer WSe 2 field effect transistor with improved carrier-injection contact by using oxygen plasma treatment

2018 ◽  
Vol 140 ◽  
pp. 2-7 ◽  
Author(s):  
Won-Mook Kang ◽  
SungTae Lee ◽  
In-Tak Cho ◽  
Tae Hyung Park ◽  
Hyeonwoo Shin ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Field Effect ◽  
Oxygen Plasma ◽  
Field Effect Transistor ◽  
Oxygen Plasma Treatment ◽  
Carrier Injection ◽  
Effect Transistor

High Breakdown Voltage GaN HEMT Device Fabricated on Self-Standing GaN Substrate

2013 ◽  
Vol 347-350 ◽  
pp. 1535-1539
Author(s):  
Jian Jun Zhou ◽  
Liang Li ◽  
Hai Yan Lu ◽  
Ceng Kong ◽  
Yue Chan Kong ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Breakdown Voltage ◽  
Oxygen Plasma ◽  
Cutoff Frequency ◽  
Chemical Vapor ◽  
Current Gain ◽  
Organic Chemical ◽  
Oxygen Plasma Treatment ◽  
Gan Hemt ◽  
High Breakdown Voltage

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.

LDI-MS examination of oxygen plasma modified polymer for designing tailored implant biointerfaces

RSC Advances ◽  
2014 ◽  
Vol 4 (50) ◽  
pp. 26240-26243 ◽  
Author(s):  
M. Gołda-Cępa ◽  
N. Aminlashgari ◽  
M. Hakkarainen ◽  
K. Engvall ◽  
A. Kotarba
Keyword(s):  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment ◽  
Parylene C ◽  
Modified Polymer

A versatile parylene C coating for biomaterials was fabricated by the mild oxygen plasma treatment and examined by the use of LDI-MS..

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