Epitaxial growth and dielectric properties of Pb0.4Sr0.6TiO3 thin films on (00l)-oriented metallic Li0.3Ni0.7O2 coated MgO substrates

2007 ◽  
Vol 90 (26) ◽  
pp. 262906 ◽  
Author(s):  
X. T. Li ◽  
P. Y. Du ◽  
C. L. Mak ◽  
K. H. Wong
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Epitaxial Growth

Epitaxial growth and dielectric properties of homologous Srm−3Bi4TimO3m+3 (m=3,4,5,6) thin films

2002 ◽  
Vol 81 (26) ◽  
pp. 5009-5011 ◽  
Author(s):  
S. T. Zhang ◽  
Y. F. Chen ◽  
H. P. Sun ◽  
X. Q. Pan ◽  
Z. G. Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Epitaxial Growth

Epitaxial growth and planar dielectric properties of compositionally graded (Ba1−xSrx)TiO3 thin films prepared by pulsed-laser deposition

2002 ◽  
Vol 80 (18) ◽  
pp. 3376-3378 ◽  
Author(s):  
Xinhua Zhu ◽  
Nui Chong ◽  
Helen Lai-Wah Chan ◽  
Chung-Loong Choy ◽  
Kin-Hung Wong ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition

Epitaxial Growth of Sr0.3Ba0.7Nb2O6 Thin Films Prepared by Sol-Gel Process

1999 ◽  
Vol 606 ◽  
Author(s):  
Keishi Nishio ◽  
Jirawat Thongrueng ◽  
Yuichi Watanabe ◽  
Toshio Tsuchiya
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Epitaxial Growth ◽  
Raw Materials ◽  
Substrate Surface ◽  
Sol Gel ◽  
Tungsten Bronze ◽  
Monomethyl Ether ◽  
Tetragonal Tungsten Bronze ◽  
Sol Gel Process

AbstructWe succeeded in the preparation of strontium-barium niobate (Sr0.3Ba0.7Nb2O6 : SBN30)that have a tetragonal tungsten bronze type structure thin films on SrTiO3 (100), STO, or La doped SrTiO3 (100), LSTO, single crystal substrates by a spin coating process. LSTO substrate can be used for electrode. A homogeneous coating solution was prepared with Sr and Ba acetates and Nb(OEt)5 as raw materials, and acetic acid and diethylene glycol monomethyl ether as solvents. The coating thin films were sintered at temperature from 700 to 1000°C for 10 min in air. It was confirmed that the thin films on STO substrate sintered above 700°C were in the epitaxial growth because the 16 diffraction spots were observed on the pole figure using (121) reflection. The <130> and <310> direction of the thin film on STO were oriented with the c-axis in parallel to the substrate surface. However, the diffraction spots of thin film on LSTO substrate sintered at 700°C were corresponds to the expected pattern for (110).

IN-PLANE DIELECTRIC PROPERTIES OF BST THIN FILMS GROWN ON MgO SUBSTRATES USING THE THIN PEROVSKITE LAYERS FOR MICROWAVE TUNABLE ELECTRONICS

2006 ◽  
Vol 86 (1) ◽  
pp. 159-169 ◽  
Author(s):  
SU-JAE LEE ◽  
HAN-CHEOL RYU ◽  
YOUNG-TAE KIM ◽  
MIN-HWAN KWAK ◽  
SEUNGEON MOON ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Bst Thin Films

scholarly journals Epitaxial growth and characterization of Cu thin films deposited on Al2O3(0001) substrates by magnetron sputtering

2021 ◽  
pp. 130119
Author(s):  
Ik-Jae Lee ◽  
Hee Seob Kim ◽  
Young Duck Yun ◽  
Seen-Woong Kang ◽  
Hyo-Yun Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Epitaxial Growth
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