Surface modification of an amorphous Si thin film crystallized by a linearly polarized Nd:YAG pulse laser beam

2007 ◽  
Vol 102 (1) ◽  
pp. 013501 ◽  
Author(s):  
Susumu Horita ◽  
Hirokazu Kaki ◽  
Kensuke Nishioka
Keyword(s):  
Thin Film ◽  
Surface Modification ◽  
Laser Beam ◽  
Pulse Laser ◽  
Pulse Laser Beam ◽  
Linearly Polarized ◽  
Amorphous Si ◽  
Si Thin Film

Periodic Alignment of Silicon Dot Fabricated by Linearly Polarized Nd:YAG Pulse Laser

2006 ◽  
Vol 910 ◽  
Author(s):  
Kensuke Nishioka ◽  
Susumu Horita
Keyword(s):  
Thin Film ◽  
Energy Density ◽  
Laser Beam ◽  
Density Distribution ◽  
Pulse Laser ◽  
Incident Beam ◽  
Sio2 Film ◽  
Energy Density Distribution ◽  
Linearly Polarized ◽  
Si Thin Film

AbstractPeriodically aligned submicron Si dots were fabricated by only irradiating linearly polarized Nd:YAG pulse laser to the amorphous silicon (a-Si) thin film deposited on silicon dioxide (SiO2) film. Interference between the incident beam and the scattered surface wave leads to the spatial periodicity of beam energy density distribution on the surface of the irradiated samples. The a-Si thin film was melted by laser beam, and then, the molten thin Si film was split and condensed due to its surface tensile according to the periodic energy density distribution. The polycrystalline Si (poly-Si) fine lines were formed periodically. After the first irradiation, the sample was rotated by 90o, and the laser beam was irradiated. The periodic energy density distribution was generated on the Si fine lines. Then, the lines were split off and condensed according to the periodic energy density distribution, and the periodically aligned submicron Si dots were fabricated on the SiO2 film.

Formation of periodic grain boundary in an Si thin film crystallized by a linearly polarized Nd:YAG pulse laser with an ultra sonic oscillator

2004 ◽  
Vol 808 ◽  
Author(s):  
Hirokazu Kaki ◽  
Takehiko Ootani ◽  
Susumu Horita
Keyword(s):  
Grain Boundary ◽  
Pulse Laser ◽  
Pulse Number ◽  
Novel Technique ◽  
Thermal Distribution ◽  
Irradiation Pulse ◽  
Linearly Polarized ◽  
Boundary Location ◽  
Amorphous Si ◽  
Si Thin Film

ABSTRACTIn order to obtain a large silicon (Si) grain and to control the location of its boundary in a Si film melting-crystallized by a pulse laser, we have proposed to use periodic thermal distribution spontaneously induced by irradiation of a linearly polarized laser beam. We estimated the suitable amorphous Si (a-Si) thickness taking account of multiple reflection theoretically and confirmed it experimentally. Also, we proposed a novel technique to reduce the irradiation pulse number to control the grain boundary location stably in the crystallized Si film, in which the elastic wave was generated on the surface of a-Si film prior to melting-crystallization by using an ultra sonic oscillator. Owing to this technique, we can control the grain boundary location periodically with only 1 pulse irradiation in the crystallized Si film.

Propagation of sinusoidal pulse laser beam in a plasma channel

2007 ◽  
Vol 14 (11) ◽  
pp. 113105 ◽  
Author(s):  
Ajay K. Upadhyay ◽  
Gaurav Raj ◽  
Rohit K. Mishra ◽  
Pallavi Jha
Keyword(s):  
Laser Beam ◽  
Pulse Laser ◽  
Plasma Channel ◽  
Pulse Laser Beam
Sign in / Sign up

Export Citation Format

Share Document