Magnitude of the intrinsic electrocaloric effect in ferroelectric perovskite thin films at high electric fields

2007 ◽  
Vol 90 (25) ◽  
pp. 252909 ◽  
Author(s):  
G. Akcay ◽  
S. P. Alpay ◽  
J. V. Mantese ◽  
G. A. Rossetti
Keyword(s):  
Thin Films ◽  
Electric Fields ◽  
Electrocaloric Effect ◽  
High Electric Fields ◽  
Ferroelectric Perovskite

Conduction in Very Thin Films at High Electric Fields

1964 ◽  
Vol 35 (6) ◽  
pp. 1983-1984 ◽  
Author(s):  
N. M. Bashara ◽  
L. A. Weitzenkamp
Keyword(s):  
Thin Films ◽  
Electric Fields ◽  
High Electric Fields

Effect of Barium-to-Strontium on Leakage Current Mechanism of Sol-Gel BaxSr1-xTiO3 Thin Films

2014 ◽  
Vol 911 ◽  
pp. 185-189
Author(s):  
Ala’eddin A. Saif ◽  
Zul Azhar Zahid Jamal ◽  
Prabakaran Poopalan
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Electric Fields ◽  
Sol Gel ◽  
Barium Strontium ◽  
Gel Technique ◽  
High Electric Fields ◽  
Leakage Current Mechanism ◽  
Limited Conduction ◽  
Current Mechanism

Ferroelectric barium strontium titanate (BaxSr1-xTiO3) thin films with different Ba content have been fabricated as MFM configuration using sol-gel technique. The effect of barium-to-strontium ratio on the leakage current mechanism of BaxSr1-xTiO3 thin films has been investigated. The results show that the leakage current density increases as Ba content increases, which attributed to the grain size effect. The leakage current for the tested films has been studied using log (J) vs log (E) plane, which shows three distinguished linear regions. These regions have been characterized using power law () to find that: the region at low electric fields (E < 20 KV/cm) is controlled by Ohmic conduction and the other two regions (E > 20 KV/cm) are due to space charge limited conduction, which is also confirmed via modified Langmuir-Child law. In addition, it is observed that at high electric fields region (E > 1.29×105 V/m) the films show Schottky emission (SE) and PooleFrenkel (PF) emission mechanisms.

Magnitude of Intrinsic Electrocaloric Effect in Pb(Zr1-xTix)O3 at High Electric Fields

2013 ◽  
Vol 700 ◽  
pp. 7-10
Author(s):  
Wen Jiang Feng ◽  
Zhi Guo Zhang ◽  
Chuang Wu ◽  
Hao Chen
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Structural Transition ◽  
Strong Electric Field ◽  
Zero Field ◽  
Electrocaloric Effect ◽  
Structure Transition ◽  
First Order ◽  
High Electric Fields ◽  
Curie Temperatures

The structure transition and electrocaloric effect in PbZr1-xTixO3withx=0.5 and 0.6 were MV/m can make the structural transition be a continuous one. In addition, whenx=0.5 and 0.6 at the zero field, the first order structural transition occurs atT0=665 and 691 K, respectively. The first order structural transition comes to the second one upon the strong electric field, which leads to lower the change of specific hea. The structural transition temperature is shifted at high temperature with increasing electric field. The maximum electrocaloric effect is present at about 200 K above their corresponding Curie temperatures.

Ultrafast Polarization Switching in Ferroelectric Polymer Thin Films at Extremely High Electric Fields

2011 ◽  
Vol 4 (3) ◽  
pp. 031501 ◽  
Author(s):  
Hajime Ishii ◽  
Takashi Nakajima ◽  
Yoshiyuki Takahashi ◽  
Takeo Furukawa
Keyword(s):  
Thin Films ◽  
Electric Fields ◽  
Polymer Thin Films ◽  
Polarization Switching ◽  
Ferroelectric Polymer ◽  
High Electric Fields

Relation between dielectric permittivity and electrocaloric effect under high electric fields in the Pb(Mg1/3Nb2/3)O3-based ceramics

2020 ◽  
Vol 127 (18) ◽  
pp. 184102
Author(s):  
Lovro Fulanović ◽  
Andraž Bradeško ◽  
Nikola Novak ◽  
Barbara Malič ◽  
Vid Bobnar
Keyword(s):  
Dielectric Permittivity ◽  
Electric Fields ◽  
Electrocaloric Effect ◽  
High Electric Fields

Thickness Dependence of Leakage Current Behavior in Epitaxial (Ba,Sr)TiO3 Thin Films

2001 ◽  
Vol 688 ◽  
Author(s):  
Kun Ho Ahn ◽  
Sang Sub Kim ◽  
Sunggi Baik
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Leakage Current ◽  
Electric Fields ◽  
Thickness Dependence ◽  
Schottky Emission ◽  
Field Range ◽  
Critical Film Thickness ◽  
High Electric Fields ◽  
Current Behavior

AbstractThickness dependence of leakage current behaviors was investigated in epitaxial (Ba0.5Sr0.5)TiO3 thin films with different thicknesses of 55 - 225 nm prepared on Pt(001)/MgO(001) substrates by a radio-frequency magnetron sputtering technique. Below a certain critical film thickness (≤ 55 nm), the Schottky emission is a ruling leakage conduction mechanism over a wide electric field range. In contrast, in thicker films (> 55 nm), the Schottky emission still operates at low electric fields, however at high electric fields the Fowler-Nordheim (F-N) tunneling dominates. The transition film thickness appears to be associated with overlapping of the depletion layers formed at the top and bottom electrode interfaces.

Charge transport in ultrathin iron-phthalocyanine thin films under high electric fields

2011 ◽  
Vol 23 (35) ◽  
pp. 355801 ◽  
Author(s):  
Arvind Kumar ◽  
A Singh ◽  
S Samanta ◽  
K Vasundhara ◽  
A K Debnath ◽  
...  
Keyword(s):  
Thin Films ◽  
Charge Transport ◽  
Electric Fields ◽  
Iron Phthalocyanine ◽  
High Electric Fields

Atomic Spectroscopy in the FIM

1986 ◽  
Vol 44 ◽  
pp. 758-761
Author(s):  
J. J. Hren ◽  
S. D. Walck
Keyword(s):  
Electron Microscope ◽  
Electric Fields ◽  
Atom Probe ◽  
Atomic Spectroscopy ◽  
Single Atom ◽  
Statistical Sampling ◽  
Commercial Instrument ◽  
Available Technology ◽  
High Electric Fields ◽  
Field Ion Microscope

The field ion microscope (FIM) has had the ability to routinely image the surface atoms of metals since Mueller perfected it in 1956. Since 1967, the TOF Atom Probe has had single atom sensitivity in conjunction with the FIM. “Why then hasn't the FIM enjoyed the success of the electron microscope?” The answer is closely related to the evolution of FIM/Atom Probe techniques and the available technology. This paper will review this evolution from Mueller's early discoveries, to the development of a viable commercial instrument. It will touch upon some important contributions of individuals and groups, but will not attempt to be all inclusive. Variations in instrumentation that define the class of problems for which the FIM/AP is uniquely suited and those for which it is not will be described. The influence of high electric fields inherent to the technique on the specimens studied will also be discussed. The specimen geometry as it relates to preparation, statistical sampling and compatibility with the TEM will be examined.

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