scholarly journals Real time structural modification of epitaxial FePt thin films under x-ray rapid thermal annealing using undulator radiation

2007 ◽  
Vol 90 (25) ◽  
pp. 251901 ◽  
Author(s):  
J. R. Skuza ◽  
R. A. Lukaszew ◽  
E. M. Dufresne ◽  
D. A. Walko ◽  
C. Clavero ◽  
...  
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Structural Modification ◽  
Undulator Radiation ◽  
X Ray ◽  
Fept Thin Films

L10 Ordering of FePt Thin Films by Rapid Thermal Annealing

2003 ◽  
Vol 27 (11) ◽  
pp. 1083-1086 ◽  
Author(s):  
H. Ito ◽  
T. Kusunoki ◽  
H. Saito ◽  
S. Ishio
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Fept Thin Films

Fabrication of L1/sub 0/-FePt thin films by rapid thermal annealing

2005 ◽  
Vol 41 (10) ◽  
pp. 3898-3900 ◽  
Author(s):  
K. Aimuta ◽  
K. Nishimura ◽  
S. Hashi ◽  
M. Inoue
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Fept Thin Films

Effect of Rapid Thermal Annealing on the Structural and Magnetic Properties of Nanostructured FePt Thin Films

2013 ◽  
Vol 829 ◽  
pp. 396-400
Author(s):  
Younes Jalalizadeh ◽  
Ali Ghasemi ◽  
Gholam Reza Gordani
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Hysteresis Loops ◽  
Rf Magnetron Sputtering ◽  
Phase Identification ◽  
Glass Substrates ◽  
Structural And Magnetic Properties ◽  
Fept Thin Films

The main goal of this study is to investigate the structural and magnetic properties of FePt thin film with respect to the annealing tempreture. The FePt thin films were deposited by RF magnetron sputtering on Corning glass substrates at a room temperature. The films were then post-annealed at the Range of 575-675°C for 20 s by rapid thermal annealing (RTA) at a high heating ramp rate of 100 °Cs. Phase identification of thin films was performed using X-ray diffraction (XRD). With employing SEM, the size and uniformity of grains were studied. Moreover magnetic properties of annealed thin films were evaluated using a vibrating sample magnetometer (VSM). XRD results showed that the ordered FePt structure is formed at 625°C. According to the hysteresis loops, maximum out-of-plane and in-plane coercivity reached 7kOe. this value was achieve at 675°C .These results reveal its significant potential as magnetic recording media for high-density recording.

The Fabrication of Fe-Doped TiCoSb Thin Films by Magnetron Sputtering and Rapid Thermal Annealing

2013 ◽  
Vol 341-342 ◽  
pp. 129-133
Author(s):  
Juan Qin ◽  
Niu Yi Sun ◽  
Guo Hua Wang ◽  
Min Zhang ◽  
Wei Min Shi ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
X Ray Diffraction ◽  
X Ray ◽  
High Seebeck Coefficient ◽  
Diffraction Patterns ◽  
P Type ◽  
Narrow Band Gap Semiconductors

TiCoSb-based half-Heusler compounds, which are narrow band gap semiconductors with a high Seebeck coefficient, have been intensively studied in bulk form but rarely in thin films. In this article TiFexCo1-xSb (x=0, 0.17) thin films were synthesized on n-type single crystal Si (100) and MgO (100) substrates by DC magnetron sputtering followed by rapid thermal annealing. The X-ray diffraction patterns show that Fe doping does not affect the crystallization temperature of TiCoSb phase, but seem to induce the formation of binary phases like TiSb. Hall measurements reveal that the undoped TiCoSb thin films are n-type semiconducting, while TiFe0.2Co0.8Sb turns to p-type with half-order higher carrier concentration of 1.5×1021cm-3. The vibrating sample magnetometer spectrum indicate that the TiCoSb thin film is non-magnetic and TiFexCo1-xSb (x=0.17) is weak magnetic.

Effects of Rapid Thermal Annealing on CdTe/CdS Solar Cell Fabrication

1996 ◽  
Vol 426 ◽  
Author(s):  
Y. A. Cho ◽  
W. J. Nam ◽  
H. S. Kim ◽  
G. Y. Yeom ◽  
J. K. Yoon ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Photoelectron Spectroscopy ◽  
Surface Composition ◽  
Bulk Composition ◽  
Cross Sectional ◽  
Transmission Microscopy ◽  
X Ray ◽  
Cdte Thin Films

AbstractRapid thermal annealing (RTA) was applied to anneal polycrystalline CdTe thin films evaporated on CdS/ITO substrate and the effects of rapid thermal annealing temperatures and gas environments were studied. X-ray diffractometer (XRD), X-ray photoelectron spectroscopy(XPS), energy dispersive X-ray spectroscopy(EDX), cross-sectional transmission microscopy(TEM), and micro-EDX in TEM were used to characterize physical and chemical properties of rapid thermal annealed CdTe thin films. Complete CdTe/CdS photovoltaic cells were fabricated and I-V characteristics of these cells were measured under the illumination. Results showed that the bulk composition of CdTe remained stoichiometric to 550°C in the air environment and surface composition became Cd-rich. Cross-sectional TEM and micro-EDX showed columnar grains and micro-twins remained even after RTA, however, sulfur content in rapid thermal annealed CdTe caused by sulfur diffusion from CdS during the annealing was much smaller than that by furnace annealing. Among the investigated RTA temperatures and gas environments, the cell made with CdTe annealed at 550°C in the air showed the best solar energy conversion efficiency.

scholarly journals Fabrication of highly L10-ordered FePt thin films by low-temperature rapid thermal annealing

APL Materials ◽  
2013 ◽  
Vol 1 (3) ◽  
pp. 032117 ◽  
Author(s):  
M. Mizuguchi ◽  
T. Sakurada ◽  
T. Y. Tashiro ◽  
K. Sato ◽  
T. J. Konno ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Temperature Rapid Thermal Annealing ◽  
Fept Thin Films
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