Large-area patterning of a solution-processable organic semiconductor to reduce parasitic leakage and off currents in thin-film transistors

2007 ◽  
Vol 90 (24) ◽  
pp. 244103 ◽  
Author(s):  
Kimberly C. Dickey ◽  
Sankar Subramanian ◽  
John E. Anthony ◽  
Li-Hsin Han ◽  
Shaochen Chen ◽  
...  
2020 ◽  
Vol 8 (43) ◽  
pp. 15112-15118
Author(s):  
Sujin Sung ◽  
Won-June Lee ◽  
Marcia M. Payne ◽  
John E. Anthony ◽  
Chang-Hyun Kim ◽  
...  

Large-area printed low-voltage organic thin film transistors are fabricated with the bar-coating of minimal solutions of cross-linked dielectric and organic semiconductor.


Small ◽  
2016 ◽  
Vol 12 (36) ◽  
pp. 4993-4999 ◽  
Author(s):  
Jianting Gu ◽  
Jie Han ◽  
Dan Liu ◽  
Xiaoqin Yu ◽  
Lixing Kang ◽  
...  

Materials ◽  
2017 ◽  
Vol 11 (1) ◽  
pp. 8 ◽  
Author(s):  
Nicole Rice ◽  
François Magnan ◽  
Owen Melville ◽  
Jaclyn Brusso ◽  
Benoît Lessard

2005 ◽  
Vol 149 (2-3) ◽  
pp. 231-235 ◽  
Author(s):  
Sergei A. Ponomarenko ◽  
Stephan Kirchmeyer ◽  
Marcus Halik ◽  
Hagen Klauk ◽  
Ute Zschieschang ◽  
...  

2016 ◽  
Vol 16 (4) ◽  
pp. 3659-3663
Author(s):  
H Yu ◽  
L Zhang ◽  
X. H Li ◽  
H. Y Xu ◽  
Y. C Liu

The amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) were demonstrated based on a double-layer channel structure, where the channel is composed of an ultrathin nitrogenated a-IGZO (a-IGZO:N) layer and an undoped a-IGZO layer. The double-layer channel device showed higher saturation mobility and lower threshold-voltage shift (5.74 cm2/Vs, 2.6 V) compared to its single-layer counterpart (0.17 cm2/Vs, 7.23 V). The improvement can be attributed to three aspects: (1) improved carrier transport properties of the channel by the a-IGZO:N layer with high carrier mobility and the a-IGZO layer with high carrier concentration, (2) reduced interfacial trap density between the active channel and the gate insulator, and (3) higher surface flatness of the double-layer channel. Our study reveals key insights into double-layer channel, involving selecting more suitable electrical property for back-channel layer and more suitable interface modification for active layer. Meanwhile, room temperature fabrication amorphous TFTs offer certain advantages on better flexibility and higher uniformity over a large area.


Nano Research ◽  
2018 ◽  
Vol 11 (8) ◽  
pp. 4356-4367 ◽  
Author(s):  
Guodong Dong ◽  
Jie Zhao ◽  
Lijun Shen ◽  
Jiye Xia ◽  
Hu Meng ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document