Localized switching mechanism in resistive switching of atomic-layer-deposited TiO2 thin films

2007 ◽  
Vol 90 (24) ◽  
pp. 242906 ◽  
Author(s):  
Kyung Min Kim ◽  
Byung Joon Choi ◽  
Cheol Seong Hwang
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Atomic Layer ◽  
Tio2 Thin Films ◽  
Switching Mechanism

scholarly journals Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition

2005 ◽  
Vol 98 (3) ◽  
pp. 033715 ◽  
Author(s):  
B. J. Choi ◽  
D. S. Jeong ◽  
S. K. Kim ◽  
C. Rohde ◽  
S. Choi ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Resistive Switching ◽  
Atomic Layer ◽  
Tio2 Thin Films ◽  
Switching Mechanism ◽  
Layer Deposition ◽  
Resistive Switching Mechanism

scholarly journals Biomaterial-Induced Stable Resistive Switching Mechanism in TiO2 Thin Films: The Role of Active Interstitial Sites/Ions in Minimum Current Leakage and Superior Bioactivity

ACS Omega ◽  
2020 ◽  
Vol 5 (30) ◽  
pp. 19050-19060
Author(s):  
Misbah Sehar Abbasi ◽  
Muhammad Sultan Irshad ◽  
Naila Arshad ◽  
Iftikhar Ahmed ◽  
Muhammad Idrees ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Tio2 Thin Films ◽  
Current Leakage ◽  
Switching Mechanism ◽  
Resistive Switching Mechanism

Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films

2007 ◽  
Vol 91 (1) ◽  
pp. 012907 ◽  
Author(s):  
Kyung Min Kim ◽  
Byung Joon Choi ◽  
Yong Cheol Shin ◽  
Seol Choi ◽  
Cheol Seong Hwang
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Tio2 Thin Films

Resistive Switching Characteristics in TiO2 ReRAM with Top Electrode of Co Selectively Formed on SAMs Printed Patterns

2007 ◽  
Vol 124-126 ◽  
pp. 603-606
Author(s):  
Sang Hee Won ◽  
Seung Hee Go ◽  
Jae Gab Lee
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Atomic Layer ◽  
High Resistance State ◽  
Resistive Random Access Memory ◽  
Tio2 Thin Films ◽  
Selective Deposition ◽  
Precise Control ◽  
Resistance State ◽  
Switching Characteristics

Simple process for the fabrication of Co/TiO2/Pt resistive random access memory, called ReRAM, has been developed by selective deposition of Co on micro-contact printed (μ-CP) self assembled monolayers (SAMs) patterns. Atomic Layer Deposition (ALD) was used to deposit TiO2 thin films, showing its ability of precise control over the thickness of TiO2, which is crucial to obtain proper resistive switching properties of TiO2 ReRAM. The fabrication process for Co/TiO2/Pt ReRAM involves the ALD of TiO2 on sputter-deposited Pt bottom electrode, followed by μ-CP with SAMs and then selective deposition of Co. This results in the Co/TiO2/Pt structure ReRAM. For comparison, Pt/TiO2/Pt ReRAM was produced and revealing the similar switching characteristics as that of Co/TiO2/Pt, thus indicating the feasibility of Co replacement with Pt top electrode. The ratios between the high-resistance state (Off state) and the low-resistance state (On state) were larger than 102. Consequently, the selective deposition of Co with μ-CP, newly developed in this study, can simplify the process and thus implemented into the fabrication of ReRAM.

Phase-gradient atomic layer deposition of TiO2 thin films by plasma-induced local crystallization

2021 ◽  
Author(s):  
Dohyun Go ◽  
Jaehyeong Lee ◽  
Jeong Woo Shin ◽  
Sungje Lee ◽  
Wangu Kang ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Tio2 Thin Films ◽  
Phase Gradient ◽  
Layer Deposition

scholarly journals Enhanced photocatalytic bacterial inactivation of atomic-layer deposited anatase-TiO2 thin films on rutile-TiO2 nanotubes

2020 ◽  
Vol 19 (3) ◽  
pp. 399-405
Author(s):  
Joel Molina-Reyes ◽  
Alejandra Romero-Morán ◽  
José L. Sánchez-Salas
Keyword(s):  
Thin Films ◽  
Photocatalytic Activity ◽  
Tio2 Nanotubes ◽  
Considerable Increase ◽  
Atomic Layer ◽  
Surface Modifications ◽  
Anatase Tio2 ◽  
Bacterial Inactivation ◽  
Tio2 Thin Films ◽  
Experimental Conditions

Experimental conditions to fabricate rutile-TiO2 nanotubes coated with a conformal anatase-TiO2 thin layer using ALD were reported. A considerable increase in the photocatalytic activity associated with these surface modifications was also observed.

TiN electrode-induced bipolar resistive switching of TiO2 thin films

2010 ◽  
Vol 10 (1) ◽  
pp. e71-e74 ◽  
Author(s):  
Young Ho Do ◽  
June Sik Kwak ◽  
Yoon Cheol Bae ◽  
Jong Hyun Lee ◽  
Yongmin Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Tio2 Thin Films ◽  
Bipolar Resistive Switching

scholarly journals Quantifying the Extent of Ligand Incorporation and the Effect on Properties of TiO2 Thin Films Grown by Atomic Layer Deposition Using an Alkoxide or an Alkylamide

2020 ◽  
Vol 32 (4) ◽  
pp. 1393-1407
Author(s):  
Maxime E. Dufond ◽  
Maïmouna W. Diouf ◽  
Clémence Badie ◽  
Carine Laffon ◽  
Philippe Parent ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Tio2 Thin Films ◽  
Layer Deposition
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