High density Ru nanocrystal deposition for nonvolatile memory applications

2007 ◽  
Vol 101 (12) ◽  
pp. 124503 ◽  
Author(s):  
Damon B. Farmer ◽  
Roy G. Gordon
Keyword(s):  
Nonvolatile Memory ◽  
High Density ◽  
Memory Applications

Redox-Active Molecular Nanowire Flash Memory for High-Endurance and High-Density Nonvolatile Memory Applications

2015 ◽  
Vol 7 (49) ◽  
pp. 27306-27313 ◽  
Author(s):  
Hao Zhu ◽  
Sujitra J. Pookpanratana ◽  
John E. Bonevich ◽  
Sean N. Natoli ◽  
Christina A. Hacker ◽  
...  
Keyword(s):  
Flash Memory ◽  
Nonvolatile Memory ◽  
High Density ◽  
Redox Active ◽  
Memory Applications

Correction to Redox-Active Molecular Nanowire Flash Memory for High-Endurance and High-Density Nonvolatile Memory Applications

2016 ◽  
Vol 8 (30) ◽  
pp. 19842-19842 ◽  
Author(s):  
Hao Zhu ◽  
Sujitra J. Pookpanratana ◽  
John E. Bonevich ◽  
Sean N. Natoli ◽  
Christina A. Hacker ◽  
...  
Keyword(s):  
Flash Memory ◽  
Nonvolatile Memory ◽  
High Density ◽  
Redox Active ◽  
Memory Applications

Investigation of ferroelectrics using conventional and in situ electron microscopy

1994 ◽  
Vol 52 ◽  
pp. 586-587
Author(s):  
V. Saikumar ◽  
H. M. Chan ◽  
M. P. Harmer
Keyword(s):  
Nonvolatile Memory ◽  
Ferroelectric Materials ◽  
Gate Insulator ◽  
Sensors And Actuators ◽  
In Situ Electron Microscopy ◽  
Ferroelectric Domains ◽  
Domain Boundaries ◽  
Domain Interactions ◽  
Memory Applications

In recent years, there has been a growing interest in the application of ferroelectric thin films for nonvolatile memory applications and as a gate insulator in DRAM structures. In addition, bulk ferroelectric materials are also widely used as components in electronic circuits and find numerous applications in sensors and actuators. To a large extent, the performance of ferroelectric materials are governed by the ferroelectric domains (with dimensions in the micron to sub-micron range) and the switching of domains in the presence of an applied field. Conventional TEM studies of ferroelectric domains structures, in conjunction with in-situ studies of the domain interactions can aid in explaining the behavior of ferroelectric materials, while providing some answers to the mechanisms and processes that influence the performance of ferroelectric materials. A few examples from bulk and thin film ferroelectric materials studied using the TEM are discussed below.Figure 1 shows micrographs of ferroelectric domains obtained from undoped and Fe-doped BaTiO3 single crystals. The domain boundaries have been identified as 90° domains with the boundaries parallel to <011>.

SOT and STT-Based 4-Bit MRAM Cell for High-Density Memory Applications

2021 ◽  
pp. 1-7
Author(s):  
Arshid Nisar ◽  
Seema Dhull ◽  
Sparsh Mittal ◽  
Brajesh Kumar Kaushik
Keyword(s):  
High Density ◽  
Memory Applications

Polymeric Thin Films for Electro-Optic Modulator and High Density Optical Memory Applications

1995 ◽  
Vol 392 ◽  
Author(s):  
Larry R. Dalton ◽  
Aaron W. Harper ◽  
Zhiyong Liang ◽  
Jingsong Zhu ◽  
Uzi Efron ◽  
...  
Keyword(s):  
Conformational Changes ◽  
Optical Waveguides ◽  
Optical Memory ◽  
High Density ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Polymeric Thin Films ◽  
Buried Channel ◽  
Electro Optic ◽  
Memory Applications

AbstractChromophores capable of undergoing conformational changes when exposed to ultraviolet or visible light have been synthesized with functional groups permitting attachment to polymer matrices. One class of such chromophores, containing reactive functionalities at both ends of the chromophore, are referred to as double-end crosslinkable (DEC) chromophores. These chromophores are used in the synthesis of hardened nonlinear optically active lattices and in the fabrication of buried channel nonlinear optical waveguides by photoprocessing; development of such waveguides represents a critical step in the production of polymeric electro-optic modulators. Such chromophores are also crucial to the phenomena of laser-assisted poling (also known as photochemically-induced poling). Finally, these chromophores are attached to the surface of polystyrene beads permitting the realization of room temperature spectral hole burning exploiting morphology-dependent resonances. Such resonances provide the basis of wavelength coding for the development of high density optical memories.

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