Current transport in short channel top-contact pentacene field-effect transistors investigated with the selective molecular doping technique

2007 ◽  
Vol 90 (19) ◽  
pp. 193507 ◽  
Author(s):  
F. Fujimori ◽  
K. Shigeto ◽  
T. Hamano ◽  
T. Minari ◽  
T. Miyadera ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Current Transport ◽  
Short Channel ◽  
Molecular Doping ◽  
Doping Technique ◽  
Top Contact

scholarly journals Low-voltage and short-channel pentacene field-effect transistors with top-contact geometry using parylene-C shadow masks

2010 ◽  
Vol 96 (13) ◽  
pp. 133306 ◽  
Author(s):  
Yoonyoung Chung ◽  
Boris Murmann ◽  
Selvapraba Selvarasah ◽  
Mehmet R. Dokmeci ◽  
Zhenan Bao
Keyword(s):  
Field Effect ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Contact Geometry ◽  
Short Channel ◽  
Parylene C ◽  
Top Contact

Scalable Submicron Channel Fabrication by Suspended Nanofiber Lithography for Short‐Channel Field‐Effect Transistors

2021 ◽  
pp. 2109254
Author(s):  
Hai‐Yang Liu ◽  
Jun Yin ◽  
Xiangxiang Gao ◽  
Sanchuan Zhao ◽  
Gang Bian ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Short Channel

Comparative Performance Analysis of Nanowire and Nanotube Field Effect Transistors

2021 ◽  
pp. 54-70
Author(s):  
Raj Kumar ◽  
Shashi Bala ◽  
Arvind Kumar
Keyword(s):  
Performance Analysis ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Ballistic Transport ◽  
High Mobility ◽  
Short Channel Effects ◽  
Short Channel ◽  
Comparative Performance ◽  
Channel Effects ◽  
And Performance

To have enhanced drive current and diminish short channel effects, planer MOS transistors have migrated from single-gate devices to three-dimensional multi-gate MOSFETs. The gate-all-around nanowire field-effect transistor (GAA NWFET) and nanotube or double gate-all-around field-effect transistors (DGGA-NTFET) have been proposed to deal with short channel effects and performance relates issues. Nanowire and nanotube-based field-effect transistors can be considered as leading candidates for nanoscale devices due to their superior electrostatic controllability, and ballistic transport properties. In this work, the performance of GAA NWFETs and DGAA-NT FETs will be analyzed and compared. III-V semiconductor materials as a channel will also be employed due to their high mobility over silicon. Performance analysis of junctionless nanowire and nanotube FETs will also be compared and presented.

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