High electron doping to a wide band gap semiconductor 12CaO∙7Al2O3 thin film

2007 ◽  
Vol 90 (18) ◽  
pp. 182105 ◽  
Author(s):  
Masashi Miyakawa ◽  
Masahiro Hirano ◽  
Toshio Kamiya ◽  
Hideo Hosono
Keyword(s):  
Thin Film ◽  
Band Gap ◽  
Wide Band ◽  
High Electron ◽  
Wide Band Gap ◽  
Electron Doping

scholarly journals Routes to develop a [S]/([S]+[Se]) gradient in wide band-gap Cu2ZnGe(S,Se)4 thin-film solar cells

2021 ◽  
Vol 868 ◽  
pp. 159253
Author(s):  
Andrea Ruiz-Perona ◽  
Galina Gurieva ◽  
Michael Sun ◽  
Tim Kodalle ◽  
Yudania Sánchez ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Gap ◽  
Wide Band ◽  
Thin Film Solar Cells ◽  
Wide Band Gap

scholarly journals Wide band gap kesterite absorbers for thin film solar cells: potential and challenges for their deployment in tandem devices

2019 ◽  
Vol 3 (9) ◽  
pp. 2246-2259 ◽  
Author(s):  
Bart Vermang ◽  
Guy Brammertz ◽  
Marc Meuris ◽  
Thomas Schnabel ◽  
Erik Ahlswede ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Gap ◽  
Wide Band ◽  
Wide Bandgap ◽  
Thin Film Solar Cells ◽  
Wide Band Gap ◽  
Tandem Solar Cells

This study describes the potential and challenges involved with the use of wide bandgap kesterite absorbers in tandem solar cells.

Microstructural and optical properties of nanocrystalline MgS thin film as wide band gap barrier material

2014 ◽  
Vol 118 (2) ◽  
pp. 539-545 ◽  
Author(s):  
B. A. Taleatu ◽  
E. Omotoso ◽  
E. A. A. Arbab ◽  
R. A. Lasisi ◽  
W. O. Makinde ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Barrier Material

The path towards efficient wide band gap thin-film kesterite solar cells with transparent back contact for viable tandem application

2021 ◽  
Vol 219 ◽  
pp. 110824
Author(s):  
Samira Khelifi ◽  
Guy Brammertz ◽  
Léo Choubrac ◽  
Maria Batuk ◽  
Sheng Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Gap ◽  
Wide Band ◽  
Back Contact ◽  
Wide Band Gap

ScGaN and ScAlN: emerging nitride materials

2014 ◽  
Vol 2 (17) ◽  
pp. 6042-6050 ◽  
Author(s):  
M. A. Moram ◽  
S. Zhang
Keyword(s):  
Band Gap ◽  
Optoelectronic Devices ◽  
Wide Band ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Wide Band Gap ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Wide Band Gap Semiconductors ◽  
Energy Harvesting Devices

ScAlN and ScGaN alloys are wide band-gap semiconductors which can greatly expand the options for band gap and polarisation engineering required for efficient III-nitride optoelectronic devices, high-electron mobility transistors and energy-harvesting devices.

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