Influence of molecular structure and microstructure on device performance of polycrystalline pentacene thin-film transistors

2007 ◽  
Vol 90 (17) ◽  
pp. 171926 ◽  
Author(s):  
Horng-Long Cheng ◽  
Yu-Shen Mai ◽  
Wei-Yang Chou ◽  
Li-Ren Chang
Keyword(s):  
Molecular Structure ◽  
Thin Film ◽  
Thin Film Transistors ◽  
Device Performance ◽  
Structure And Microstructure

Effect of dielectric/organic interface properties on the performance of the organic thin film transistors

2013 ◽  
Vol 1501 ◽  
Author(s):  
Ronak Rahimi ◽  
D. Korakakis
Keyword(s):  
Molecular Structure ◽  
Thin Film ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Charge Carrier Mobility ◽  
Organic Thin Film Transistors ◽  
Device Performance ◽  
Electrical Characteristics ◽  
Organic Thin Film ◽  
Organic Layers

ABSTRACTIn order to manufacture organic electronic devices with high performance, more detailed studies of the structure and the morphology of the organic materials as well as the underlying physical charge transport mechanisms are warranted. For instance, high efficiency organic thin film transistors (OTFTs) require materials with high charge carrier mobility [1, 2]. The parameters that determine the charge carrier mobility of the device include the structure of the first organic layer at the organic-dielectric interface as well as the morphology and the structural order of the other organic layers. Therefore, fundamental questions about structural properties of organic materials should be answered in order to optimize device performance [2-4].In this work, several bilayer structures of LiF/PTCDI-C8 and LiF/pentacene were prepared and their morphology and molecular structure were characterized using X-ray reflectivity (XRR) technique. In order to study the effects of the films’ structures and dielectric/organic interfacial properties on the device performance, OTFTs based on these bilayers were fabricated and characterized. It has been observed that PTCDI-C8 thin films have higher molecular packing in the LiF/PTCDI-C8 bilayer structure, which results in superior electrical characteristics for OTFTs based on this organic material. Devices with LiF/PTCDI-C8 bilayer exhibit about one order of magnitude higher output current (Ids) at a constant drain-source voltage (Vds) compared to the devices with LiF/pentacene bilayer. The observed differences in the electrical characteristics of these devices can be attributed to the effects of the dielectric/organic interface and the molecular structure of the organic layers.

Origin of Device Performance Degradation in InGaZnO Thin-Film Transistors after Crystallization

2012 ◽  
Vol 51 (1R) ◽  
pp. 015601 ◽  
Author(s):  
Byung Du Ahn ◽  
Hyun Soo Shin ◽  
Dong Lim Kim ◽  
Seung Min Lee ◽  
Jin-Seong Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Degradation ◽  
Device Performance

Effect of NH3 plasma treatment on the device performance of ZnO based thin film transistors

Vacuum ◽  
2011 ◽  
Vol 85 (9) ◽  
pp. 904-907 ◽  
Author(s):  
R. Navamathavan ◽  
R. Nirmala ◽  
Cheul Ro Lee
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
Device Performance

scholarly journals Changes of the molecular structure in organic thin film transistors during operation

2015 ◽  
Vol 71 (a1) ◽  
pp. s522-s522
Author(s):  
Fabiola Liscio ◽  
Laura Ferlauto ◽  
Micaela Matta ◽  
Rafael Pfattner ◽  
Mauro Murgia ◽  
...  
Keyword(s):  
Molecular Structure ◽  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film

Origin of Device Performance Degradation in InGaZnO Thin-Film Transistors after Crystallization

2011 ◽  
Vol 51 (1) ◽  
pp. 015601 ◽  
Author(s):  
Byung Du Ahn ◽  
Hyun Soo Shin ◽  
Dong Lim Kim ◽  
Seung Min Lee ◽  
Jin-Seong Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Degradation ◽  
Device Performance

Up-scaling of the manufacturing of all-inkjet-printed organic thin-film transistors: Device performance and manufacturing yield of transistor arrays

2016 ◽  
Vol 30 ◽  
pp. 237-246 ◽  
Author(s):  
Enrico Sowade ◽  
Kalyan Yoti Mitra ◽  
Eloi Ramon ◽  
Carme Martinez-Domingo ◽  
Fulvia Villani ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Device Performance ◽  
Organic Thin Film ◽  
Manufacturing Yield ◽  
Up Scaling

Effect of molecular structure on bias stress effect in organic thin-film transistors

2011 ◽  
Vol 257 (22) ◽  
pp. 9386-9389 ◽  
Author(s):  
A.K. Diallo ◽  
F. Fages ◽  
F. Serein-Spirau ◽  
J.-P. Lère-porte ◽  
C. Videlot-Ackermann
Keyword(s):  
Molecular Structure ◽  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Stress Effect ◽  
Organic Thin Film ◽  
Bias Stress

Dependences of Structural Parameters on the Characteristics of Poly-Si Thin-Film Transistors after Plasma Passivation

2003 ◽  
Vol 762 ◽  
Author(s):  
Cheng-Ming Yu ◽  
Tiao-Yuan Huang ◽  
Tan-Fu Lei ◽  
Horng-Chih Lin
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Detailed Analysis ◽  
Thin Film Transistors ◽  
Structural Parameters ◽  
Subthreshold Swing ◽  
Device Performance ◽  
Short Channel ◽  
Plasma Passivation ◽  
Si Thin Film

AbstractThe effects of NH3 and H2 plasma passivation on the characteristics of poly-Si thin-film transistors with source/drain extensions induced by a bottom sub-gate were studied. Our results show that significant improvements in device performance can be obtained by both passivation methods. Moreover, NH3-plasma-treatment appears to be more effective in reducing the off-state leakage, subthreshold swing, compared to H2 plasma passivation. NH3 plasma treatment is also found to be more effective in reducing the anomalous subthrehold hump phenomenon observed in non-plasma-treated short-channel devices. Detailed analysis suggests that all these improvements can be explained by the more effective passivation of the traps distributed in both the front and back sides of the channel by NH3 plasma treatment.

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