Effect of Substrate Temperature on The Structural and Optical Properties of Non-doped ZnO Thin Films

Author(s):  
Saliha Ilican ◽  
Mujdat Caglar ◽  
Yasemin Caglar
2012 ◽  
Vol 626 ◽  
pp. 25-28 ◽  
Author(s):  
A. Ismail ◽  
Mat Johar Abdullah

AlN doped ZnO thin films were prepared on glass and Si (100) substrates by RF sputtering. For AlN doped ZnO at RF powers of 200 W (ZnO target) and 200W (AlN target), the ZnO (002) peak showed the highest intensity at the substrate temperature of 400˚ C. The prepared films showed good transmission of above 72 % in the visible range. The calculated values of energy band gaps were in the range (3.42 eV - 3.54 eV) for the films prepared at different substrate temperatures.


2011 ◽  
Vol 131 (9) ◽  
pp. 1900-1903 ◽  
Author(s):  
Yue Zhao ◽  
Mintao Zhou ◽  
Zhao Li ◽  
Zhiyong Lv ◽  
Xiaoyan Liang ◽  
...  

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