Evaluation of Concentration of Deep Levels from Photoelectric Measurements in Wide Gap High-Resistivity Semiconductors

2007 ◽  
Author(s):  
Jan Franc ◽  
Pavel Hőschl ◽  
Jan Kubát ◽  
Roman Grill ◽  
Pavel Hlídek ◽  
...  
Keyword(s):  
Deep Levels ◽  
High Resistivity ◽  
Wide Gap ◽  
Photoelectric Measurements

Deep levels in high resistivity GaN epilayers grown by MOCVD

2006 ◽  
Vol 3 (3) ◽  
pp. 585-588 ◽  
Author(s):  
Cebao Fang ◽  
Xiaoliang Wang ◽  
Junxi Wang ◽  
Chao Liu ◽  
Cuimei Wang ◽  
...  
Keyword(s):  
Deep Levels ◽  
High Resistivity

Deep Level Centers in Carbon-Doped High Resistivity GaN

2014 ◽  
Vol 997 ◽  
pp. 492-495
Author(s):  
Huan Cui ◽  
Li Wu Lu ◽  
Ling Sang ◽  
Bai He Chen ◽  
Zhi Wei He ◽  
...  
Keyword(s):  
Deep Level ◽  
Chemical Vapor ◽  
Deep Levels ◽  
Hall Measurement ◽  
High Resistivity ◽  
Organic Chemical ◽  
Carbon Doped ◽  
Metal Organic ◽  
High Level ◽  
Organic Chemical Vapor Deposition

The deep levels of carbon doped high resistivity (HR) GaN samples grown by metal-organic chemical vapor deposition (MOCVD) has been investigated using thermally stimulated current (TSC) spectroscopy and high temperature (HT) Hall measurement. Two different thickness of 100 and 300 nm were used to be compared. It was found that four distinct deep levels by TSC and one deep level by HT Hall measurement were observed in both samples, which means great help for the decrease of leakage current and lifetime limitations of device utilizing the structure. The activation energy of these levels was calculated and their possible origins were also proposed. The low temperature traps, might be related to VN, 0.50 and 0.52eV related to incorporate a high level carbon, 0.57eV related to VGa, 0.59eV related to CGaor NGa, 0.91 and 0.97eV related to interstitial N1.

Investigation of Deep Levels In X-Ray Detector Material With Photo Induced Current Transient Spectroscopy (Picts)

1993 ◽  
Vol 302 ◽  
Author(s):  
C Eiche ◽  
M Fiederle ◽  
J Weese ◽  
D Maier ◽  
D Ebling ◽  
...  
Keyword(s):  
Tikhonov Regularization ◽  
Deep Level ◽  
Great Influence ◽  
Simulated Data ◽  
Radiation Detectors ◽  
Deep Levels ◽  
High Resistivity ◽  
Pulse Excitation ◽  
Detector Performance ◽  
Transient Spectroscopy

ABSTRACTDeep levels have a great influence on the recombination behavior of the free carriers in semiconductors. For several years PICTS has been used to investigate the deep levels in high resistivity material such as GaAs or CdTe used in detector applications. An important feature of the PICTS measurements is the analysis of the current transients after pulse excitation. We propose using a new method based on Tikhonov regularization. This method was implemented in the program FTIKREG (Fast Tikhonov Regularization) by one of the authors. The superior resolution of the regularization method in comparison to conventional techniques is shown using simulated data. Moreover, the method is applied to investigate deep levels in CdTe:Cl, SI-GaAs and GaAs:Cr samples used for room temperature radiation detectors. A relation between deep level properties and detector performance is proposed.

Compensation by deep levels in semi-insulating GaAs

1982 ◽  
Vol 60 (1) ◽  
pp. 35-40 ◽  
Author(s):  
B. A. Lombos ◽  
N. Yemenidjian ◽  
M. Averous
Keyword(s):  
Fermi Level ◽  
Multilevel Model ◽  
Deep Levels ◽  
High Resistivity ◽  
Spectrographic Analysis ◽  
Insulating Materials ◽  
Active Impurity ◽  
Source Mass ◽  
Insulating Properties

A multilevel model was developed to calculate the position of the Fermi level in GaAs. All the electrically-active impurity concentrations, indicated by spark source mass spectrographic analysis, were taken into account in the computation. The deduced semiconducting or semi-insulating properties are in agreement with the measured characteristics of the investigated crystals. It is shown that, in the case of the large gap semiconductors, only deep-lying impurity compensation results in high resistivity, semi-insulating materials.

Nonlinear spectroscopy of deep levels in wide-gap II–VI semiconductors

1990 ◽  
Vol 101 (1-4) ◽  
pp. 699-704 ◽  
Author(s):  
R. Baltramiejũnas ◽  
V. Gavryushin
Keyword(s):  
Nonlinear Spectroscopy ◽  
Deep Levels ◽  
Wide Gap

Deep Levels In High Resistivity AlGaN Films Grown By MOCVD

1998 ◽  
Vol 512 ◽  
Author(s):  
A. Y. Polyakov ◽  
N. B. Smirnov ◽  
A. V. Govorkov ◽  
J. M. Redwing
Keyword(s):  
Dark Current ◽  
Room Temperature ◽  
Complex Form ◽  
Deep Levels ◽  
Rapid Decrease ◽  
High Resistivity ◽  
Yellow Luminescence ◽  
Temperature Quenching ◽  
Long Tail ◽  
Current Relaxation

ABSTRACTDeep levels in high resistivity layers of AlGaN grown by MOCVD on sapphire were studied by means of dark current and photocurrent versus temperature measurements and by photoinduced current relaxation spectroscopy (PICTS). Strong temperature quenching of photocurrent was observed and explained by the presence of hole traps with energies 0.2 eV, 0.3 eV and 0.35 eV for films with correspondingly 5%, 15% and 25% of Al. Two hole traps with activation energies of 0.27–0.35 eV and 0.85–1.05 eV depending on composition were detected in PICTS spectra. It is suggested that the former traps are the same as observed in temperature quenching of photocurrent while the latter traps are related to the yellow luminescence band in AlGaN. The photocurrent decay is shown to have a complex form with a rapid decrease followed by a long tail associated with detrapping of holes. It is argued that, at room temperature, the ∼1 eV hole traps are mainly responsible for the amplitude of the tail.

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