InAs self-assembled quantum dots superlattice structure fabricated by strain compensation technique

2007 ◽  
Author(s):  
Ryuji Oshima ◽  
Takayuki Hashimoto ◽  
Hidemi Shigekawa ◽  
Yoshitaka Okada
Keyword(s):  
Quantum Dots ◽  
Superlattice Structure ◽  
Strain Compensation ◽  
Compensation Technique ◽  
Self Assembled

Strain compensation technique in self-assembled InAs/GaAs quantum dots for applications to photonic devices

2009 ◽  
Vol 42 (7) ◽  
pp. 073002 ◽  
Author(s):  
J Tatebayashi ◽  
N Nuntawong ◽  
P S Wong ◽  
Y-C Xin ◽  
L F Lester ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Photonic Devices ◽  
Strain Compensation ◽  
Compensation Technique ◽  
Self Assembled

Fabrication of ultra-high-density InAs quantum dots using the strain-compensation technique

2010 ◽  
Vol 208 (2) ◽  
pp. 425-428 ◽  
Author(s):  
Kouichi Akahane ◽  
Naokatsu Yamamoto ◽  
Tetsuya Kawanishi
Keyword(s):  
Quantum Dots ◽  
High Density ◽  
Inas Quantum Dots ◽  
Strain Compensation ◽  
Compensation Technique

Optical gain of multi-stacked InAs quantum dots grown on InP(311)B substrate by strain-compensation technique

2010 ◽  
Vol 8 (2) ◽  
pp. 254-256 ◽  
Author(s):  
Ayami Takata ◽  
Kouichi Akahane ◽  
Naokatsu Yamamoto ◽  
Yoshitaka Okada
Keyword(s):  
Quantum Dots ◽  
Optical Gain ◽  
Inas Quantum Dots ◽  
Strain Compensation ◽  
Compensation Technique

Strain compensation effect on stacked InAs self-assembled quantum dots embedded in GaNAs layers

2005 ◽  
Vol 891 ◽  
Author(s):  
Ryuji Oshima ◽  
Takayuki Hashimoto ◽  
Hidemi Shigekawa ◽  
Yoshitaka Okada
Keyword(s):  
Quantum Dots ◽  
Molecular Beam ◽  
Compensation Effect ◽  
Compressive Strain ◽  
X Ray Diffraction ◽  
Inas Quantum Dots ◽  
X Ray ◽  
Spacer Layer ◽  
Strain Compensation ◽  
Self Assembled

ABSTRACTWe have studied the effect of strain compensation in multiple stacking of InAs self-assembled quantum dots on GaAs (001) substrates grown by atomic hydrogen assisted RF-molecular beam epitaxy. The GaNxAs1−x material was used as a strain compensating spacer layer. We confirmed by high resolution x-ray diffraction measurements that a 40 nm GaN0.005As0.995 strain compensating layer provides compressive strain to compensate for tensile strain induced by 2.0 ML InAs quantum dots. Consequently, we achieved a multiple stack of InAs QDs up to 30 layers without formation of coalesced QDs, and the density of QDs exceeded 1012 cm−2.

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