scholarly journals Complex impedance measurements of calorimeters and bolometers: Correction for stray impedances

2007 ◽  
Vol 78 (4) ◽  
pp. 043105 ◽  
Author(s):  
Mark. A. Lindeman ◽  
Kathleen A. Barger ◽  
Donald E. Brandl ◽  
S. Gwynne Crowder ◽  
Lindsay Rocks ◽  
...  
Keyword(s):  
Complex Impedance ◽  
Impedance Measurements

Conduction Characteristics of Charge Ordering Type Ferroelectrics,YFe2O4

2006 ◽  
Vol 966 ◽  
Author(s):  
Ken Imamura ◽  
Yoichi Horibe ◽  
Takeshi Yoshimura ◽  
Norifumi Fujimura ◽  
Shigeo Mori ◽  
...  
Keyword(s):  
Room Temperature ◽  
Inflection Point ◽  
Oxygen Deficiency ◽  
Complex Impedance ◽  
Charge Ordering ◽  
Neel Temperature ◽  
Ohmic Conduction ◽  
Néel Temperature ◽  
Impedance Measurements ◽  
Conduction Properties

ABSTRACTElectrical conduction properties of charge ordering type ferroelectrics YFe2O4 were investigated. YFe2O4 was synthesized in reduced atmosphere at 1200 °C. Oxygen partial pressure of the reduced atmosphere was controlled by the equilibrium state of CO and CO2. YFe2O4 is paramagnetic at room temperature and has Néel temperature around 250K. The Néel temperature was decreased with increasing the amount of oxygen deficiency. Moreover, YFe2O4 showed ohmic conduction from 260 to 100 K. The temperature dependence of the DC conductivity showed an inflection point at the Néel temperature, which indicated the development of charge ordering of Fe2+ and Fe3+ ions. From the complex impedance measurements, the equivalent circuits of YFe2O4 with different oxygen deficiency were determined at various temperatures.

scholarly journals Fast Diffusion of Iron in Single Crystal Rutile and Iron Doped Rutile

1983 ◽  
Vol 24 ◽  
Author(s):  
J. Sasaki ◽  
N. L. Peterson ◽  
L. C. De Jonghe
Keyword(s):  
Electrical Conductivity ◽  
Ionic Conductivity ◽  
Pressure Dependence ◽  
Ionic Conduction ◽  
Complex Impedance ◽  
Fast Diffusion ◽  
Iron Ions ◽  
Impedance Measurements ◽  
Fe Content ◽  
Shear Structure

ABSTRACTTracer diffusion coefficients of Fe, DFe* in single crystals of rutile and of 0 –2.0% Fe doped rutile were measured. The oxygen pressure dependence of DFe* in pure rutile showed complicated behavior. The values of DFe* may consist of contributions from Fe2+ ions diffusing by an interstitial mechanism and from Fe3+ ions diffusing by an interstitialcy mechanism in cooperation with tetravalent titanium interstitial ions, Tii. The value of DFe* in Fe doped rutile attains a saturation value when the Fe content reaches about 0.1%, D*Fe decreases drastically when the Fe content exceeds about 0.35%. Complex impedance measurements of electrical conductivity indicate the existence of ionic conduction for Fe doped rutile containing less than 0.35% of Fe. The small ionic conductivity relative to the values of D*Fe suggests that only a small fraction of the iron ions are highly mobile. Above 0.35% Fe, the observed drastic decrease in D*Fe may result from the formation of a shear structure In highly doped rutile.

A Study of The Viability of Poly(O-Methoxyanhine) Layer-by-Layer Films as Gas Sensors

1999 ◽  
Vol 558 ◽  
Author(s):  
M. Raposo ◽  
O.N. Oliveira
Keyword(s):  
Relative Humidity ◽  
Gas Sensors ◽  
Complex Impedance ◽  
Layer By Layer ◽  
Fixed Frequency ◽  
Humid Atmosphere ◽  
Impedance Measurements ◽  
The Real ◽  
Order Of Magnitude ◽  
Impedance Component

ABSTRACTThe electrical properties of layer-by-layer films of poly(o-methoxyaniline) (POMA) alternated with poly(vinylsulfonic acid) (PVS) have been investigated as a function of the surrounding atmosphere, in order to probe the sensitivity of POMA/PVS as a gas sensor. The POMA films have their conductivity increased with increasing humidity, near to one order of magnitude higher for 100% relative humidity when compared to nitrogen. The d.c. applied field may affect the POMA films, for these films become practically insulating if the field is applied for a prolonged time (typically 10-20 h) in humid air. In order to circumvent this problem, a.c. impedance measurements were conducted. For samples in nitrogen, oxygen and carbon dioxide, the real part of the complex impedance increases only when the frequency is lowered below 10 kHz. In a humid atmosphere, the onset for the real part occurs at higher frequencies than for dry atmospheres. Furthermore, at a fixed frequency in the range from 10 to 100 kHz this impedance component increases with the relative humidity.

scholarly journals Investigation of the Optical and Electrical Properties of ITO/ZnO/CdS/CuO:Co/Ag Structure for Solar Cell

2020 ◽  
Vol 2020 ◽  
pp. 1-8
Author(s):  
L. Nkhaili ◽  
A. Narjis ◽  
A. Outzourhit ◽  
A. El Kissani ◽  
R. El Moznine
Keyword(s):  
Solar Cell ◽  
Electrical Properties ◽  
Short Circuit ◽  
Sol Gel ◽  
Complex Impedance ◽  
Open Circuit ◽  
Window Layer ◽  
Zno Films ◽  
Energy Bands ◽  
Impedance Measurements

In this work, a new structure ITO/n-ZnO/n-CdS/p-CuO:Co/Ag for solar cell was prepared on a glass/ITO substrate. The RF sputtering was used to deposit the window layer (n-ZnO) at different time periods in order to reach various thickness of this film. The n-CdS thin films were synthesized by sol-gel technique to reduce the energy bands. The buffer layer (p-CuO:Co) was sputtered at 200 W, under 30% of oxygen. Then, the electrode (Ag) with a thickness of 100 nm was deposited by thermal evaporation under a pressure of 10−5 mbar. The photovoltaic activity results obtained from this structure showed that the above method is more relevant to achieve such structure. The electrical properties of this structure were investigated using the current-voltage (I-V) and AC impedance complex measurements. The values of open circuit voltage (Voc), short-circuit current (Jsc), and fill factor (FF) are 0.46 V, 4.1 mA cm−2, and 30%, respectively. The analysis of complex impedance measurements was very useful to investigate the electrical behavior of n-ZnO/n-CdS and n-CdS/p-CuO:Co interfaces. The impedance data are presented in the Nyquist and Bode plots at different thicknesses of the n-ZnO films. An equivalent circuit was used to analyze and to fit the experimental data. The validity of these fitting results is further supported by the extrapolation and the deconvolution of both process of the diffusion and recombination processes at the n-ZnO/n-CdS and n-CdS/p-CuO:Co interfaces, respectively. Our finding could provide an efficient method for fabricating a new configuration for improving the efficiency of inorganic ZnO/CuO solar cells as well as a useful approach for the analysis of complex impedance measurements. Further works are in progress in order to better improve the conversion efficiency.

Characterisation of a-Si:H by complex impedance measurements

1984 ◽  
Vol 64 (1-2) ◽  
pp. 21-28 ◽  
Author(s):  
P.Y Timbrell ◽  
B Ranchoux ◽  
H Hamdi
Keyword(s):  
Complex Impedance ◽  
Impedance Measurements
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