High quality AlGaN solar-blind Schottky photodiodes fabricated on AIN/sapphire template

2007 ◽  
Vol 90 (12) ◽  
pp. 121121 ◽  
Author(s):  
H. Jiang ◽  
T. Egawa
Keyword(s):  
High Quality ◽  
Solar Blind

Controlled Growth of High-Quality ZnO-Based Films and Fabrication of Visible-Blind and Solar-Blind Ultra-Violet Detectors

2009 ◽  
Vol 21 (45) ◽  
pp. 4625-4630 ◽  
Author(s):  
Xiaolong Du ◽  
Zengxia Mei ◽  
Zhanglong Liu ◽  
Yang Guo ◽  
Tianchong Zhang ◽  
...  
Keyword(s):  
Ultra Violet ◽  
Controlled Growth ◽  
High Quality ◽  
Solar Blind ◽  
Visible Blind

Self-powered diamond/β-Ga2O3 photodetectors for solar-blind imaging

2018 ◽  
Vol 6 (21) ◽  
pp. 5727-5732 ◽  
Author(s):  
Yan-Cheng Chen ◽  
Ying-Jie Lu ◽  
Chao-Nan Lin ◽  
Yong-Zhi Tian ◽  
Chao-Jun Gao ◽  
...  
Keyword(s):  
High Quality ◽  
Solar Blind ◽  
Self Powered

Self-powered solar-blind photodetectors based on diamond/β-Ga2O3 heterojunctions have been fabricated and high quality solar-blind images have been realized.

Novel green synthesis and improved solar-blind detection performance of hierarchical γ-Ga2O3 nanospheres

2017 ◽  
Vol 5 (29) ◽  
pp. 7161-7166 ◽  
Author(s):  
Mao Mao Ruan ◽  
Le Xin Song ◽  
Zun Yang ◽  
Yue Teng ◽  
Qing Shan Wang ◽  
...  
Keyword(s):  
Green Synthesis ◽  
Direct Conversion ◽  
Detection Performance ◽  
Blind Detection ◽  
High Quality ◽  
Precursor Complex ◽  
Solar Blind

High-quality γ-Ga2O3 nanospheres (diameter, 130 nm) were successfully synthesized by direct conversion of a precursor complex of Ga3+ ions and tartrate ions (L2−) in water.

Development of an AlN Deep UV Detector for Space Application

2000 ◽  
Vol 639 ◽  
Author(s):  
Feng Zhong ◽  
Changhe Huang ◽  
Yuri V. Danylyuk ◽  
Gregory W. Auner
Keyword(s):  
Dark Current ◽  
Space Application ◽  
X Ray Diffraction ◽  
Uv Detector ◽  
High Quality ◽  
Contact Materials ◽  
X Ray ◽  
Sensing Material ◽  
Solar Blind ◽  
Deep Uv

ABSTRACTAlN is a very promising deep UV sensing material suitable for space application such as exoatomospheric solar blind detectors due to its large band gap (6.2 eV), excellent radiation and thermal stability. In this paper, a deep UV detector based on AlN photoconductor was successfully grown and characterized. High quality AlN thin films on Sapphire have been confirmed by in-stu RHEED and X-ray diffraction measurements. The film has an optical Eg of 5.96 eV. The detector has extremely low dark current. Different electrodes were investigated as contact materials. Al and Pt are more suitable electrode contacts for AlN photoconductor compared to Ti. The DC responsivity of the detector starts to rise for photon energies of about 255 nm (4.9eV) and reaches its maximum 7×10-5 A/W at 195 nm (6.5eV).

ChemInform Abstract: Controlled Growth of High-Quality ZnO-Based Films and Fabrication of Visible-Blind and Solar-Blind Ultra-Violet Detectors

ChemInform ◽  
2010 ◽  
Vol 41 (7) ◽  
Author(s):  
Xiaolong Du ◽  
Zengxia Mei ◽  
Zhanglong Liu ◽  
Yang Guo ◽  
Tianchong Zhang ◽  
...  
Keyword(s):  
Ultra Violet ◽  
Controlled Growth ◽  
High Quality ◽  
Solar Blind ◽  
Visible Blind

Synthesis of High-Quality Multilayer Hexagonal Boron Nitride Films on Au Foils for Ultrahigh Rejection Ratio Solar-Blind Photodetection

2020 ◽  
Vol 12 (25) ◽  
pp. 28351-28359 ◽  
Author(s):  
Biying Tan ◽  
Huihui Yang ◽  
Yunxia Hu ◽  
Feng Gao ◽  
Lifeng Wang ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
High Quality ◽  
Rejection Ratio ◽  
Solar Blind ◽  
Boron Nitride Films
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