scholarly journals On-chip electron-impact ion source using carbon nanotube field emitters

2007 ◽  
Vol 90 (12) ◽  
pp. 124102 ◽  
Author(s):  
Christopher A. Bower ◽  
Kristin H. Gilchrist ◽  
Jeffrey R. Piascik ◽  
Brian R. Stoner ◽  
Srividya Natarajan ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Electron Impact ◽  
Ion Source ◽  
Field Emitters ◽  
On Chip

On-chip vacuum microtriode using carbon nanotube field emitters

2002 ◽  
Vol 80 (20) ◽  
pp. 3820-3822 ◽  
Author(s):  
C. Bower ◽  
W. Zhu ◽  
D. Shalom ◽  
D. Lopez ◽  
L. H. Chen ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Emitters ◽  
On Chip

Enhanced Field Emission Properties of Carbon Nanotube Based Field Emitters by Dynamic Oxidation

2013 ◽  
Vol 9 (5) ◽  
pp. 619-623 ◽  
Author(s):  
Shama Parveen ◽  
Samina Husain ◽  
Avshish Kumar ◽  
Javid Ali ◽  
Mubashshir Husain ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Emission ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Field Emitters ◽  
Dynamic Oxidation

scholarly journals Interaction of Fullerenes with Organosilanes in the Ionization Chamber of a Mass Spectrometer under Electron Impact and the Reaction of C60with Tetraphenylsilane in Solution under UV Irradiation

2016 ◽  
Vol 2016 ◽  
pp. 1-9
Author(s):  
Yury I. Lyakhovetsky ◽  
Elena A. Shilova ◽  
Alexandra P. Pleshkova ◽  
Alexander I. Belokon ◽  
Sergey O. Yakushin ◽  
...  
Keyword(s):  
Electron Impact ◽  
Mass Spectrometer ◽  
Uv Irradiation ◽  
Ionization Chamber ◽  
Ion Source ◽  
Organic Radicals ◽  
Mechanistic Study ◽  
Mass Spectral ◽  
Additional Support ◽  
Derivatives Of

C60was shown to react with organosilanes Me4Si, Ph2SiH2, Ph2MeSiH, Ph4Si, andα-naphthylphenylmethylsilane in the electron ionization ion source of a mass spectrometer with the transfer of the corresponding organic radicals (Me, Ph, andα-naphthyl) from the silanes to the fullerene. The reactions were accompanied by hydrogen addition to some products and hydrogen loss from them. C70reacted with Me4Si analogously. A reaction mechanism involving homolytic dissociation of the silanes under electron impact to the corresponding organic radicals, which react further with C60at the surface of the ionization chamber of the mass spectrometer to give the respective adducts, was offered. A mechanistic study of the reaction of C60with Me4Si supported it. No silicon containing derivatives of the fullerenes were found. C60reacted with Ph4Si in solution under UV irradiation in a similar fashion furnishing phenyl derivatives of the fullerene. These results provide an additional support to the hypothesis formulated earlier thatthe homolytic reactive mass spectrometry of fullerenes (the reactions of fullerenes with other species in the ionization chambers of mass spectrometers and their mass spectral monitoring)can predict the reactivity of them toward the same reagents in solution to a significant extent.

Novel ring structure for minimisation of screening effect in carbon nanotube based field emitters

2013 ◽  
Vol 10 (1) ◽  
pp. 45-55 ◽  
Author(s):  
Seema Gautam ◽  
Preeti V. Shah ◽  
Pika Jha ◽  
Monika Kumari ◽  
Mamta Khaneja ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Ring Structure ◽  
Screening Effect ◽  
Field Emitters

Notizen: Fast Pulsed Laser Induced Electron Generation for Electron Impact Mass Spectrometry

1988 ◽  
Vol 43 (12) ◽  
pp. 1151-1153 ◽  
Author(s):  
E. R. Rohwer ◽  
R.C. Beavis ◽  
C. Köster ◽  
J. Lindner ◽  
J. Grotemeyer ◽  
...  
Keyword(s):  
Electron Impact ◽  
Mass Spectra ◽  
Ion Source ◽  
Electron Impact Mass Spectrometry ◽  
Uv Laser ◽  
Electron Generation ◽  
Medium Resolution ◽  
Electron Impact Mass ◽  
Impact Mass ◽  
Tof Ms

A new ultra fast electron impact (El) ion source is pre­sented that produces a very short, high intensity electron beam, allowing medium resolution mass spectra to be re­corded without pulsing the ion accelerating voltages in a time-of-flight mass spectrometer (TOF-MS). The ion source requires minimum modification of any TOF-MS equipped with an electrostatic ion reflector and UV-laser. El-spectra are presented for comparison with literature spectra.

A New Type of Cluster-Ion Source for Thin Film Deposition

1990 ◽  
Vol 206 ◽  
Author(s):  
Hellmut Haberland ◽  
Martin Karrais ◽  
Martin Mall
Keyword(s):  
Electron Impact ◽  
Plane Surface ◽  
Thin Film Deposition ◽  
Ion Source ◽  
Film Deposition ◽  
Cluster Ions ◽  
Cluster Ion ◽  
Impact Ionisation ◽  
Aggregation Technique ◽  
High Degree

ABSTRACTAtoms are gas discharge sputtered from a solid target. They are condensed to form clusters using the gas aggregation technique. An intense beam of clusters of all solid materials can be obtained. Up to 80 % of the clusters can be ionised without using additional electron impact ionisation. Total deposition rates vary between 1 and 1000 Å per second depending on cluster diameter, which can be varied between 3 and 500 nm. Thin films of Al, Cu, and Mo have been produced so far. For non accelerated beams a weakly adhering mostly coulored deposit is obtained. Accelerating the cluster ions this changes to a strongly adhering film, having a shiny metallic appearance, and a very sharp and plane surface as seen in an electron microscope. The advantages compared to Kyoto ICB-method are: easy control of the cluster size, no electron impact ionisation, high degree of ionisation, and sputtering is used instead of thermal evaporation, which allows the use of high melting point materials.

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