Mn Occupations in Ga1−xMnxN Dilute Magnetic Semiconductors Probed by X-Ray Absorption Near-Edge Structure Spectroscopy

2007 ◽  
Author(s):  
Shiqiang Wei ◽  
Wensheng Yan ◽  
Zhihu Sun ◽  
Qinghua Liu ◽  
Wenjie Zhong ◽  
...  
Keyword(s):  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Edge Structure ◽  
X Ray ◽  
X Ray Absorption

Direct determination of Mn occupations in Ga1−xMnxN dilute magnetic semiconductors by x-ray absorption near-edge structure spectroscopy

2006 ◽  
Vol 89 (12) ◽  
pp. 121901 ◽  
Author(s):  
Shiqiang Wei ◽  
Wensheng Yan ◽  
Zhihu Sun ◽  
Qinghua Liu ◽  
Wenjie Zhong ◽  
...  
Keyword(s):  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Direct Determination ◽  
Edge Structure ◽  
X Ray ◽  
X Ray Absorption

Chemical and orientational imaging of polymeric samples

1994 ◽  
Vol 52 ◽  
pp. 68-69
Author(s):  
H. Ade ◽  
B. Hsiao ◽  
G. Mitchell ◽  
E. Rightor ◽  
A. P. Smith ◽  
...  
Keyword(s):  
Ethylene Terephthalate ◽  
National Laboratory ◽  
Brookhaven National Laboratory ◽  
Carbonyl Groups ◽  
Aromatic Rings ◽  
Edge Structure ◽  
X Ray ◽  
Scanning Transmission ◽  
Polymeric Samples ◽  
X Ray Absorption

We have used the Scanning Transmission X-ray Microscope at beamline X1A (X1-STXM) at Brookhaven National Laboratory (BNL) to acquire high resolution, chemical and orientation sensitive images of polymeric samples as well as point spectra from 0.1 μm areas. This sensitivity is achieved by exploiting the X-ray Absorption Near Edge Structure (XANES) of the carbon K edge. One of the most illustrative example of the chemical sensitivity achievable is provided by images of a polycarbonate/pol(ethylene terephthalate) (70/30 PC/PET) blend. Contrast reversal at high overall contrast is observed between images acquired at 285.36 and 285.69 eV (Fig. 1). Contrast in these images is achieved by exploring subtle differences between resonances associated with the π bonds (sp hybridization) of the aromatic groups of each polymer. PET has a split peak associated with these aromatic groups, due to the proximity of its carbonyl groups to its aromatic rings, whereas PC has only a single peak.

Full-Field Calcium K-Edge X-ray Absorption Near-Edge Structure Spectroscopy on Cortical Bone at the Micron-Scale: Polarization Effects Reveal Mineral Orientation

2016 ◽  
Vol 88 (7) ◽  
pp. 3826-3835 ◽  
Author(s):  
Bernhard Hesse ◽  
Murielle Salome ◽  
Hiram Castillo-Michel ◽  
Marine Cotte ◽  
Barbara Fayard ◽  
...  
Keyword(s):  
Cortical Bone ◽  
Edge Structure ◽  
Full Field ◽  
Polarization Effects ◽  
X Ray ◽  
X Ray Absorption

scholarly journals Database of ab initio L-edge X-ray absorption near edge structure

2021 ◽  
Vol 8 (1) ◽  
Author(s):  
Yiming Chen ◽  
Chi Chen ◽  
Chen Zheng ◽  
Shyam Dwaraknath ◽  
Matthew K. Horton ◽  
...  
Keyword(s):  
High Throughput ◽  
Scattering Theory ◽  
Research Community ◽  
Metal Compounds ◽  
Edge Structure ◽  
X Ray ◽  
Initial Release ◽  
Computational Workflow ◽  
X Ray Absorption

AbstractThe L-edge X-ray Absorption Near Edge Structure (XANES) is widely used in the characterization of transition metal compounds. Here, we report the development of a database of computed L-edge XANES using the multiple scattering theory-based FEFF9 code. The initial release of the database contains more than 140,000 L-edge spectra for more than 22,000 structures generated using a high-throughput computational workflow. The data is disseminated through the Materials Project and addresses a critical need for L-edge XANES spectra among the research community.

Theoretical and experimental investigation of point defects in cubic boron nitride

MRS Advances ◽  
2017 ◽  
Vol 2 (29) ◽  
pp. 1545-1550 ◽  
Author(s):  
Nicholas L. McDougall ◽  
Jim G. Partridge ◽  
Desmond W. M. Lau ◽  
Philipp Reineck ◽  
Brant C. Gibson ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
Optical Emission ◽  
Wide Band ◽  
Wide Band Gap ◽  
Edge Structure ◽  
X Ray ◽  
Substitutional Defects ◽  
X Ray Absorption ◽  
Annealing Experiments

ABSTRACTCubic boron nitride (cBN) is a synthetic wide band gap material that has attracted attention due to its high thermal conductivity, optical transparency and optical emission. In this work, defects in cBN have been investigated using experimental and theoretical X-ray absorption near edge structure (XANES). Vacancy and O substitutional defects were considered, with O substituted at the N site (ON) to be the most energetically favorable. All defects produce unique signatures in either the B or N K-edges and can thus be identified using XANES. The calculations coupled with electron-irradiation / annealing experiments strongly suggest that ON is the dominant defect in irradiated cBN and remains after annealing. This defect is a likely source of optical emission in cBN.

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