Coordination Environments of Highly Charged Cations (Ti, Cr, and Light REE’s) in Borosilicate Glass/Melts to 1120°C

2007 ◽  
Author(s):  
François Farges ◽  
Gordon E. Brown
Keyword(s):  
Borosilicate Glass ◽  
Glass Melts

Nitrogen and Argon in Borosilicate Glass: Solubility, Diffusivity, Residual Gas Concentration and Behaviour of Bubbles in Glass Melts, Containing Both Gases

2008 ◽  
Vol 39-40 ◽  
pp. 437-442 ◽  
Author(s):  
Detlef Köpsel ◽  
Markus Booβ ◽  
M. Opyd ◽  
Maria Louisa Aigner
Keyword(s):  
High Temperature ◽  
Gas Exchange ◽  
Borosilicate Glass ◽  
Diffusion Coefficients ◽  
Molten Glass ◽  
Extraction Method ◽  
Vacuum Extraction ◽  
Glass Melts ◽  
Gas Concentration ◽  
Residual Gas

Diffusivities of nitrogen and argon in a borosilicate glass were determined with two different methods: (1) from gas exchange experiments between molten glass and bubbles containing nitrogen and argon, and (2) from solution rates of nitrogen and argon in glass during saturation experiments. Between 1200°C and 1580°C the diffusion coefficients of nitrogen and argon yielded the following equations:      − = − RT s m DN 134900 exp 10 22 . 1 ] / [ 6 . 2 2 and      − = − RT s m DAr 125300 exp 10 08 . 1 ] / [ 6 . 2 , with R=8.314 J/(mol.K). The solubilities and residual gas concentration in the glass which are necessary for the calculation of the diffusivities were determined with the high temperature vacuum extraction method.

scholarly journals Corrosion of inconel in high-temperature borosilicate glass melts containing simulant nuclear waste

2017 ◽  
Author(s):  
Xianhe Mao ◽  
Xiaoning Yuan ◽  
Clive T. Brigden ◽  
Jun Tao ◽  
Neil C. Hyatt ◽  
...  
Keyword(s):  
High Temperature ◽  
Nuclear Waste ◽  
Borosilicate Glass ◽  
Glass Melts

ChemInform Abstract: Volatile Losses from Sphene Glass-Ceramic and Borosilicate Glass Melts.

ChemInform ◽  
1988 ◽  
Vol 19 (38) ◽  
Author(s):  
E. R. VANCE ◽  
P. J. HAYWARD ◽  
R. F. HAMON
Keyword(s):  
Borosilicate Glass ◽  
Glass Ceramic ◽  
Glass Melts

Investigation of the Redox Behavior of Technetium in Borosilicate Glass Melts by Voltammetry

1988 ◽  
Vol 127 ◽  
Author(s):  
E. Freude ◽  
W. Lutze ◽  
C. Rüssel ◽  
H. A. Schaeffer
Keyword(s):  
Borosilicate Glass ◽  
Redox Reactions ◽  
Electrochemical Measurements ◽  
Redox Behavior ◽  
Glass Melts ◽  
Reducing Conditions ◽  
Waste Vitrification ◽  
T State

ABSTRACTTechnetium is a potentially hazardous radionuclide in the waste vitrification process as its oxides are volatile. Electrochemical measurements, i.e. potentiometry and voltammetry are applied to investigate the redox reactions of Tc in the glass melt. Re is studied for comparison. Under normal oxidizing conditions Tc is in the -T-state, and substancial losses of Tc occur as a result of compound volatility. Reducing conditions lead to the formation of TcO2, which precipitates from the melt. Stronger reducing conditions lead to the formation of metallic Tc

Volatile Losses from Sphene Glass-Ceramic and Borosilicate Glass Melts

1988 ◽  
Vol 71 (7) ◽  
pp. C-318-C-320 ◽  
Author(s):  
E. R. Vance ◽  
Peter J. Hayward ◽  
R. F. Hamon
Keyword(s):  
Borosilicate Glass ◽  
Glass Ceramic ◽  
Glass Melts

The interaction between refractory materials and borosilicate glass melts

1976 ◽  
Vol 33 (12) ◽  
pp. 754-757
Author(s):  
Yu. S. Sobolev ◽  
I. G. Mel'nikova ◽  
V. K. Pavlovskii ◽  
L. P. Astaf'eva
Keyword(s):  
Borosilicate Glass ◽  
Refractory Materials ◽  
Glass Melts

Nanostructure of semiconductor quantum dots in a borosilicate glass matrix by complementary use of HREM and AEM

1990 ◽  
Vol 48 (4) ◽  
pp. 728-729
Author(s):  
M.J. Kim ◽  
L.C. Liu ◽  
S.H. Risbud ◽  
R.W. Carpenter
Keyword(s):  
Quantum Dots ◽  
Borosilicate Glass ◽  
Glass Matrix ◽  
Optical Switching ◽  
Response Times ◽  
Fast Response ◽  
Processing Technique ◽  
Internal Stresses ◽  
Electron Hole ◽  
Spatial Dimensions

When the size of a semiconductor is reduced by an appropriate materials processing technique to a dimension less than about twice the radius of an exciton in the bulk crystal, the band like structure of the semiconductor gives way to discrete molecular orbital electronic states. Clusters of semiconductors in a size regime lower than 2R {where R is the exciton Bohr radius; e.g. 3 nm for CdS and 7.3 nm for CdTe) are called Quantum Dots (QD) because they confine optically excited electron- hole pairs (excitons) in all three spatial dimensions. Structures based on QD are of great interest because of fast response times and non-linearity in optical switching applications.In this paper we report the first HREM analysis of the size and structure of CdTe and CdS QD formed by precipitation from a modified borosilicate glass matrix. The glass melts were quenched by pouring on brass plates, and then annealed to relieve internal stresses. QD precipitate particles were formed during subsequent "striking" heat treatments above the glass crystallization temperature, which was determined by differential thermal analysis.

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