scholarly journals Thin film solid-state reactions forming carbides as contact materials for carbon-containing semiconductors

2007 ◽  
Vol 101 (5) ◽  
pp. 053714 ◽  
Author(s):  
W. P. Leroy ◽  
C. Detavernier ◽  
R. L. Van Meirhaeghe ◽  
C. Lavoie
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Solid State Reactions ◽  
Contact Materials

Solid-State Reactions in Ni(10 nm)/C(2 nm)/Si(001) Thin Film System

2007 ◽  
pp. 155-158
Author(s):  
Yu.N. Makogon ◽  
O.P. Pavlova ◽  
G. Beddies ◽  
A.V. Mogilatenko ◽  
O.V. Chukhrai
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Solid State Reactions ◽  
Film System ◽  
Thin Film System

Structural and Concentration Heterogeneities during Formation of Silicide Phases in the Thin Film System Ti(5nm)/Ni(24nm)/Si(001)

2013 ◽  
Vol 344 ◽  
pp. 79-84
Author(s):  
S.I. Sidorenko ◽  
S.M. Voloshko ◽  
Yu.M. Мakogon ◽  
O.P. Pavlov ◽  
I.E. Kotenko ◽  
...  
Keyword(s):  
Thin Film ◽  
Mass Spectrometry ◽  
Solid State ◽  
Auger Spectroscopy ◽  
Solid State Reactions ◽  
Layer By Layer ◽  
Film System ◽  
X Ray ◽  
Thin Film System ◽  
Secondary Ions

By the methods of Auger-spectroscopy and mass-spectrometry of secondary ions, small-angle electron diffraction, X-ray and resistometry analyses the solid-state reactions in the Ti(5 nm)/ Ni(24 nm)/Si(001) thin film system at annealing in running nitrogen in the temperature interval of 723 – 1273 К are investigated. Regularities of phase transformations, consistency of solid-state reactions, layer-by-layer redistribution of components during annealing, features of surface morphology during formation of inclusions of silicide phases are established.

Use of Pt Markers in the Study of Solid-State Reactions in the Presence of an Electric Field

1998 ◽  
Vol 4 (2) ◽  
pp. 158-163 ◽  
Author(s):  
Matthew T. Johnson ◽  
Shelley R. Gilliss ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Electric Field ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Solid State Reactions ◽  
Single Crystal Substrate ◽  
Fine Scale ◽  
Initial Location ◽  
Crystal Substrate

The use of Pt to mark the initial location of heterophase boundaries in solid-state reactions was extended to investigate the motion of interfaces during a thin-film solid-state reaction between In2O3 and MgO in the presence of an electric field. The Pt markers were prepared by sputtering a thin Pt film onto a single-crystal substrate. The resulting multilayer was then heated prior to thin-film deposition to de-wet the Pt film and thus form an array of small, isolated particles. These particles serve as fine-scale markers for tracking the motion of interfaces. However, there are certain situations in which the markers can move with the interface.

Solid state reactions in Al–Cu–Fe thin film systems

2012 ◽  
Vol 21 (1) ◽  
pp. 62-66 ◽  
Author(s):  
Fanta Haidara ◽  
Marie-Christine Record ◽  
Benjamin Duployer ◽  
Dominique Mangelinck
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Solid State Reactions

Solid-State Reactions in Ni(10 nm)/C(2 nm)/Si(001) Thin Film System

2007 ◽  
Vol 264 ◽  
pp. 155-158
Author(s):  
Yu.N. Makogon ◽  
O.P. Pavlova ◽  
G. Beddies ◽  
A.V. Mogilatenko ◽  
O.V. Chukhrai
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Solid State Reactions ◽  
Strong Impact ◽  
Film System ◽  
Nitrogen Flow ◽  
Environment Effect ◽  
X Ray ◽  
Resistivity Measurements ◽  
Thin Film System

Annealing environment effect on the phase formation in Ni(10 nm)/C(2 nm)/Si(001) thin film system produced by sequential sputtering of C and Ni targets without vacuum breaking was under investigation. The specimens were annealed 30 s in vacuum of 1.3·10-4 Pa and in nitrogen flow in the temperature range of 450 - 1000°C. The temperature stimulated solid-state reactions that occur as the result of interdiffusion processes between layers of the thin film system under investigations were examined by X-ray - and electron diffractions, resistivity measurements and Rutherford backscattering. It was established that an annealing environment has a strong impact on the development of the solid-state reactions in Ni(10 nm)/C(2 nm)/Si(001) thin film system.

Correlations Between Electrical Properties and Solid-State Reactions in Co/N-GaAs Contacts: A Bulk and Thin-Film Study

1989 ◽  
Vol 148 ◽  
Author(s):  
F.-Y. Shiau ◽  
Y. A. Chang
Keyword(s):  
Thin Film ◽  
Phase Diagram ◽  
Solid State ◽  
Electrical Properties ◽  
Phase Formation ◽  
Electrical Characterization ◽  
Solid State Reactions ◽  
Film Diffusion ◽  
Film Study ◽  
Thin Film Diffusion

ABSTRACTA fundamental and comprehensive approach has been taken to study Co//GaAs interfacial reactions, using phase diagram determination, bulk and thin-film diffusion couple studies, and electrical characterization. Phase formation sequences and interfacial morphologies are found to be similar in bulk and thin-film couples. Thermodynamic and kinetic analyses are used to rationalize the contact formations. The electrical properties of the contacts are correlated to the phase formation sequences and phase diagram information.

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