scholarly journals Spherical silicon-shell photonic band gap structures fabricated by laser-assisted chemical vapor deposition

2007 ◽  
Vol 101 (3) ◽  
pp. 033129 ◽  
Author(s):  
H. Wang ◽  
Z. Y. Yang ◽  
Y. F. Lu
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Photonic Band Gap ◽  
Chemical Vapor ◽  
Photonic Band Gap Structures ◽  
Photonic Band

High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Cvd Method ◽  
High Band

Composition Analysis of Ge Graded Si1-xGex Alloy Films by Capacitance-Voltage Method

2011 ◽  
Vol 383-390 ◽  
pp. 7613-7618
Author(s):  
Y. Yang ◽  
F. Yu ◽  
Ping Han ◽  
R.P. Ge ◽  
L. Yu
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Auger Electron ◽  
Chemical Vapor ◽  
Composition Analysis ◽  
Alloy Films ◽  
Capacitance Voltage ◽  
Capacitance Characteristics ◽  
Contact Barrier

Capacitance-voltage method was used to analyze composition of the Si1-xGex alloy films with a stochiometry gradient of Ge, which were epitaxially grown on Si (100) substrate by chemical vapor deposition. Using the capacitance characteristics of Si1-xGex/Si obtained by applying a reserve bias to the Hg electrode probe, the contact barrier height for Hg/Si1-xGexjunction and Si1-xGex/Si junction, and band gap of SSi1-xGex were estimated respectively. With the band gap of Si1-xGex, composition of Si1-xGex in Hg/Si1-xGex junction and Si1-xGex/Si junction were further obtained. Because analyzed Si1-xGex was formed through bilateral inter-diffusion of Si into the epilayer and Ge into the substrate during the deposition, Ge distribution from surface to substrate in Si1-xGex alloy films can be figured out by fitting to diffusion exponential function. The Ge distribution acquired this way was in accordance with the depth profile by auger electron spectrum.

scholarly journals DESIGN EQUATIONS OF TWO-DIMENSIONAL DIELECTRIC PHOTONIC BAND GAP STRUCTURES

2007 ◽  
Vol 74 ◽  
pp. 319-340 ◽  
Author(s):  
M. A. El-Dahshory ◽  
Ahmed M. Attiya ◽  
Essam A. Hashish
Keyword(s):  
Band Gap ◽  
Photonic Band Gap ◽  
Two Dimensional ◽  
Photonic Band Gap Structures ◽  
Photonic Band

Highly efficient parametric interactions in one-dimensional photonic band gap structures

1999 ◽  
Author(s):  
Marco Centini ◽  
Michael Scalora ◽  
Concita Sibilia ◽  
Mario Bertolotti ◽  
Mark J. Bloemer ◽  
...  
Keyword(s):  
Band Gap ◽  
Photonic Band Gap ◽  
One Dimensional ◽  
Highly Efficient ◽  
Photonic Band Gap Structures ◽  
Photonic Band ◽  
Parametric Interactions

Spray Chemical Vapor Deposition of CuInS2 Thin Films for Application in Solar Cell Devices

1997 ◽  
Vol 495 ◽  
Author(s):  
Jennifer A. Hollingsworth ◽  
William E. Buhro ◽  
Aloysius F. Hepp ◽  
Philip P. Jenkins ◽  
Mark A. Stan
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Fused Silica ◽  
Direct Band Gap ◽  
Cuins2 Thin Films ◽  
Potential Applications ◽  
Direct Band

ABSTRACTChalcopyrite CuInS2 is a direct band gap semiconductor (1.5 eV) that has potential applications in photovoltaic thin film and photoelectrochemical devices. We have successfully employed spray chemical vapor deposition using the previously known, single-source, metalorganic precursor, (Ph3P)2CuIn(SEt)4, to deposit CuInS2 thin films. Stoichiometric, polycrystalline films were deposited onto fused silica over a range of temperatures (300–400 °C). Morphology was observed to vary with temperature: spheroidal features were obtained at lower temperatures and angular features at 400 °C. At even higher temperatures (500 °C), a Cu-deficient phase, CuIn5S8, was obtained as a single phase. The CuInS2 films were determined to have a direct band gap of ca. 1.4 eV.

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