Room temperature generation of terahertz radiation from a grating-bicoupled plasmon-resonant emitter: Size effect

2007 ◽  
Vol 90 (6) ◽  
pp. 061105 ◽  
Author(s):  
Yahya Moubarak Meziani ◽  
Taiichi Otsuji ◽  
Mitsuhiro Hanabe ◽  
Takuma Ishibashi ◽  
Tomohiro Uno ◽  
...  
Photonics ◽  
2021 ◽  
Vol 8 (3) ◽  
pp. 76
Author(s):  
Mikhail K. Khodzitsky ◽  
Petr S. Demchenko ◽  
Dmitry V. Zykov ◽  
Anton D. Zaitsev ◽  
Elena S. Makarova ◽  
...  

The terahertz frequency range is promising for solving various practically important problems. However, for the terahertz technology development, there is still a problem with the lack of affordable and effective terahertz devices. One of the main tasks is to search for new materials with high sensitivity to terahertz radiation at room temperature. Bi1−xSbx thin films with various Sb concentrations seem to be suitable for such conditions. In this paper, the terahertz radiation influence onto the properties of thermoelectric Bi1−xSbx 200 nm films was investigated for the first time. The films were obtained by means of thermal evaporation in vacuum. They were affected by terahertz radiation at the frequency of 0.14 terahertz (THz) in the presence of thermal gradient, electric field or without these influences. The temporal dependencies of photoconductivity, temperature difference and voltage drop were measured. The obtained data demonstrate the possibility for practical use of Bi1−xSbx thin films for THz radiation detection. The results of our work promote the usage of these thermoelectric materials, as well as THz radiation detectors based on them, in various areas of modern THz photonics.


2010 ◽  
Vol 18 (6) ◽  
pp. 6024 ◽  
Author(s):  
D. Coquillat ◽  
S. Nadar ◽  
F. Teppe ◽  
N. Dyakonova ◽  
S. Boubanga-Tombet ◽  
...  

2012 ◽  
Vol 190 ◽  
pp. 153-156
Author(s):  
S.G. Chigarev ◽  
E.M. Epshtein ◽  
Y.V. Gulyaev ◽  
I.V. Malikov ◽  
G.M. Mikhailov ◽  
...  

Electromagnetic radiation of 1 - 10 THz range is observed at room temperature in a structure with a point contact between a ferromagnetic rod and a thin ferromagnetic film under electric current of high enough density. The radiation is due to nonequilibrium spin injection between the components of the structure. By estimates, the injection can lead to inverted population of the spin subbands. The radiation power exceeds by orders of magnitude the thermal background (with the Joule heating taking into account) and follows the current without inertia. Efficiency of the oscillator depends strongly on the material used and quantum efficiency may exceed the unity. It means the stimulated radiation processes play an important role.


2014 ◽  
Vol 627 ◽  
pp. 185-188 ◽  
Author(s):  
Krzysztof Nowak

Size effect for tension specimen in creep condition is not very well recognised phenomenon. The Weibull’s works on influence of nonhomogeneity of material properties on its strength suggest that such effect should take place also for creep. The most of authors regard that the stress redistribution occurring during creep considerably reduces size effect. To examine it the author performed a series of experiments for thin tin alloy wires creeping in room temperature as well as some numerical simulations. The results confirmed the existence of size effect for time to failure. The numerical analysis was made for time of first macroscopic damage occurrencet1and for time of cross-section failuret2. Both these parameters show the influence of specimen size according to size effect law, but the dependence of parametert1was more pronounced.


2021 ◽  
Author(s):  
I.M. Moiseenko ◽  
V.V. Popov ◽  
D.V. Fateev

Problem formulating. Currently, there are no compact, efficient terahertz radiation sources operating at room temperature. To create such sources and amplifiers, structures based on graphene with DC-current can be used. Goal. Finding conditions for achieving the negative real part of graphene conductivity and amplification of THz radiation in graphene with a direct electric current. Result. It is shown that for a certain value of direct electric current in graphene, the reflection coefficient of the THz wave incident on the structure based on graphene with DC-current exceeds unity, which indicates the amplification of THz radiation in the structure. The amplification of the THz radiation in graphene is achieved due to negative values of the real part of the graphene conductivity. Practical meaning. Results can be used to create sources and amplifiers of terahertz radiation.


2015 ◽  
Vol 13 (1) ◽  
pp. 012301-12306 ◽  
Author(s):  
Jian Deng ◽  
Yan Wang ◽  
Bing Yang ◽  
Yuguang Ma

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