Laser ablation induced vapor plume expansion into a background gas. II. Experimental analysis

2007 ◽  
Vol 101 (2) ◽  
pp. 023115 ◽  
Author(s):  
Sy-Bor Wen ◽  
Xianglei Mao ◽  
Ralph Greif ◽  
Richard E. Russo
2011 ◽  
Vol 227 ◽  
pp. 1-10 ◽  
Author(s):  
Annemie Bogaerts ◽  
Maryam Aghaei ◽  
David Autrique ◽  
Helmut Lindner ◽  
Zhao Yang Chen ◽  
...  

An overview is given of different modeling work that has been carried out, and is currently going on in our research group, in the field of modeling for laser ablation (LA). Most emphasis will be put on nanosecond (ns) LA, more specifically describing the laser-solid interaction, leading to heating, melting and vaporization of the target, by a heat conduction model, the expansion of the evaporated plume in vacuum or in a background gas by a set of conservation equations, and the plasma formation in the plume, assuming local thermal equilibrium. Some first results for nanoparticle formation in the expanding plume will be presented as well. Also, the process of target heating in the case of femtosecond (fs) LA will be described by means of a two-temperature model, and phase transitions, more specifically evaporation, will be illustrated by means of molecular dynamics simulations.


2007 ◽  
Vol 101 (2) ◽  
pp. 023114 ◽  
Author(s):  
Sy-Bor Wen ◽  
Xianglei Mao ◽  
Ralph Greif ◽  
Richard E. Russo

2012 ◽  
Vol 110 (3) ◽  
pp. 629-632 ◽  
Author(s):  
Ikurou Umezu ◽  
Naomichi Sakamoto ◽  
Hiroshi Fukuoka ◽  
Yasuhiro Yokoyama ◽  
Koichiro Nobuzawa ◽  
...  

2011 ◽  
Vol 1305 ◽  
Author(s):  
Ikurou Umezu ◽  
Shunto Okubo ◽  
Akira Sugimura

ABSTRACTThe Si nanocrystal-films are prepared by pulsed laser ablation of Si target in a mixture of helium and hydrogen gas. The total gas pressure and hydrogen partial gas pressure were varied to control structure of nanocrystal-film. The surface of Si nanocrystallite was hydrogenated and degree of hydrogenation increased with increasing hydrogen partial gas pressure. The aggregate structure of nanocrystal-film depended on both the total gas pressure and the hydrogen partial gas pressure. The former and the latter alter spatial confinement of Si species during deposition and the surface hydrogenation of individual nanocrystal, respectively. Spatial confinement increases probability of collision between nanocrystals in the plume. While, surface hydrogenation prevents coalescence of nanocrystals. The individual or aggregated nanocrystals formed in the plume reach the substrate and the nanocrystal-film is deposited on the substrate. The non-equilibrium growth processes during pulsed laser ablation are essential for the formation of the surface structure and the subsequent nanocrystal-film growth. Our results indicate that the structure of nanocrystal-film depends on the probabilities of collision and coalescence between nanocrystals in the plume. These probabilities can be varied by controlling the total gas pressure and the hydrogen partial gas pressure.


1999 ◽  
Vol 69 (S1) ◽  
pp. S243-S247 ◽  
Author(s):  
T. Makino ◽  
N. Suzuki ◽  
Y. Yamada ◽  
T. Yoshida ◽  
T. Seto ◽  
...  

2004 ◽  
Author(s):  
Tatsuo Okada ◽  
Kou Kawashima ◽  
Yoshiki Nakata

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