Direct observation of the epitaxial growth of molecular layers on molecular single crystals

2006 ◽  
Vol 89 (26) ◽  
pp. 261905 ◽  
Author(s):  
A. Sassella ◽  
A. Borghesi ◽  
M. Campione ◽  
S. Tavazzi ◽  
C. Goletti ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Single Crystals ◽  
Direct Observation ◽  
Molecular Layers

scholarly journals Direct Observation of Halide Migration and its Effect on the Photoluminescence of Methylammonium Lead Bromide Perovskite Single Crystals

2017 ◽  
Vol 29 (43) ◽  
pp. 1703451 ◽  
Author(s):  
Yanqi Luo ◽  
Parisa Khoram ◽  
Sarah Brittman ◽  
Zhuoying Zhu ◽  
Barry Lai ◽  
...  
Keyword(s):  
Single Crystals ◽  
Direct Observation ◽  
Lead Bromide

Crystallization of Intrinsic Amorphous Layers Produced by Stoichiometric Implantation of Al and O Ions in A-Axis Oriented Al2O3 Single Crystals

1989 ◽  
Vol 157 ◽  
Author(s):  
W. Zhou ◽  
D.X. Cao ◽  
D.K. Sood
Keyword(s):  
Free Surface ◽  
Epitaxial Growth ◽  
Single Crystals ◽  
Isothermal Annealing ◽  
Interface Velocity ◽  
Planar Interface ◽  
Rapid Crystallization ◽  
Substrate Orientation ◽  
Prolonged Annealing ◽  
Tentative Model

ABSTRACTIsothermal annealing behaviour of intrinsic amorphous layers produced by stoichiometric implantation in a—axis oriented α—Al2O3 single crystals has been studied. The amorphous phase transforms directly to α—Al2O3 at a well defined planar interface which moves towards the free surface. The epitaxial growth slows down after initial rapid crystallization, indicating two separate regimes. The interface velocity shows Arrhenius behaviour in both regimes with activation energies of 0.6 and 0.08 eV respectively. There is an evidence for additional surface or random crystallization into κ or γ-Al2O3 phases within the first few nm on the surface, after prolonged annealing. These results are remarkably different from those reported previously for c–axis oriented Al2O3 crystals, showing the importance of substrate orientation during crystallization. A tentative model to explain the crystallization behaviour is discussed.

Direct Observation of Gas Phase Nucleation during Physical Vapor Transport Growth of Organic Single Crystals Using a Transparent Furnace

2009 ◽  
Vol 48 (11) ◽  
pp. 118003 ◽  
Author(s):  
Sawako Miyamoto ◽  
Toshihiro Shimada ◽  
Manabu Ohtomo ◽  
Akira Chikamatsu ◽  
Tetsuya Hasegawa
Keyword(s):  
Single Crystals ◽  
Gas Phase ◽  
Direct Observation ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Phase Nucleation

Direct observation of non-collinear vortex structures induced by twin boundaries in YBa2Cu3Oy single crystals

1996 ◽  
Vol 105 (5-6) ◽  
pp. 1105-1110 ◽  
Author(s):  
A. A. Zhukov ◽  
G. K. Perkins ◽  
J. V. Thomas ◽  
A. D. Caplin ◽  
H. K�pfer ◽  
...  
Keyword(s):  
Single Crystals ◽  
Direct Observation ◽  
Vortex Structures ◽  
Twin Boundaries

Epitaxial Growth of Two-Dimensional Dichalcogenides and Modification of Their Surfaces with Scanning Probe Microscopes

1994 ◽  
Vol 332 ◽  
Author(s):  
Bruce A. Parkinson
Keyword(s):  
Epitaxial Growth ◽  
Scanning Tunneling ◽  
Two Dimensional ◽  
Tunneling Microscopy ◽  
Quantum Size ◽  
Atomic Force ◽  
Large Lattice ◽  
Two Dimensional Materials ◽  
Molecular Layers ◽  
Interlayer Bonding

ABSTRACTMethods for epitaxial growth of two dimensional materials are described. The lack of interlayer bonding in these materials allows for epitaxial growth with large lattice mismatches. Growth of MoSe2 on MoS2 (a 5% mismatch) or on SnS2 (10% mismatch) can be demonstrated. Scanning tunneling microscopy (STM) revealed remarkable structures in the epilayer as a result of the large mismatches. A technique using the STM or atomic force microscope (AFM) to selectively remove single molecular layers from the surface of layered materials is also described. The combination of these two technologies may result in the ability to produce nanoscale devices exhibiting quantum size effects.

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