Magnetic and transport properties driven by lattice strain in La0.7Ca0.3MnO3∕BaTiO3 and La0.7Sr0.3MnO3∕BaTiO3 bilayer films

2007 ◽  
Vol 33 (1) ◽  
pp. 58-65 ◽  
Author(s):  
V. G. Prokhorov ◽  
V. A. Komashko ◽  
G. G. Kaminsky ◽  
K. K. Yu ◽  
S. J. Jun ◽  
...  
Keyword(s):  
Transport Properties ◽  
Lattice Strain ◽  
Bilayer Films

Growth of single-phase PrBa0.7Sr1.3Cu3O7 thin films and the role of lattice strain on the transport properties

1998 ◽  
Vol 72 (8) ◽  
pp. 981-983 ◽  
Author(s):  
Y. G. Zhao ◽  
Z. W. Dong ◽  
M. Rajeswari ◽  
R. P. Sharma ◽  
T. Venkatesan
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Single Phase ◽  
Lattice Strain

ELECTRICAL PROPERTIES OF Si1-X-YGeXCY FILMS GROWN BY ION IMPLANTATION AND SOLID PHASE EPITAXY

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4234-4237
Author(s):  
XUEQIN LIU ◽  
CONGMIAN ZHEN ◽  
YINYUE WANG ◽  
JING ZHANG ◽  
YUEJIAO PU ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Ion Implantation ◽  
Transport Properties ◽  
Hall Mobility ◽  
Carrier Transport ◽  
Lattice Strain ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Strained Si ◽  
Carrier Transport Properties

Si 0.875-y Ge 0.125 C y ternary alloy films were grown on Si by ion implantation of C into Si 0.875 Ge 0.125 layers and subsequent solid phase epitaxy. It was shown that C atoms were nearly incorporated into substitutional sites and no SiC was formed in the SiGeC films by optimal two-step annealing. There is a prominent effect of C contents on carrier transport properties. Compared with strained Si 0.875 Ge 0.125 film, enhanced Hall mobility has been obtained in partially and fully strain compensated Si 0.875-y Ge 0.125 C y layer due to the reduction of lattice strain.

scholarly journals The effects of lattice strain, dislocations, and microstructure on the transport properties of YSZ films

2017 ◽  
Vol 19 (22) ◽  
pp. 14319-14336 ◽  
Author(s):  
George F. Harrington ◽  
Andrea Cavallaro ◽  
David W. McComb ◽  
Stephen J. Skinner ◽  
John A. Kilner
Keyword(s):  
Ionic Conductivity ◽  
Transport Properties ◽  
Lattice Strain

We report that lattice strain and dislocations play a negligible role on the ionic conductivity of YSZ films.

SURFACE MORPHOLOGY AND TRANSPORT PROPERTY IN La2/3Ca1/3MnO3, YBa1.8Eu0.2Cu3O7 PERIODIC FILMS

2007 ◽  
Vol 14 (04) ◽  
pp. 841-844 ◽  
Author(s):  
Y. M. ZHANG ◽  
Z. S. JIANG ◽  
X. S. WU ◽  
W. S. TAN ◽  
J. GAO
Keyword(s):  
Surface Morphology ◽  
Transport Properties ◽  
Transport Property ◽  
Lattice Strain ◽  
Insulator Transition ◽  
Superconducting Transition ◽  
Lattice Constants ◽  
Metal To Insulator Transition

The structure and transport properties for La 2/3 Ca 1/3 MnO 3 (LCMO)/ YBa 1.8 Eu 0.2 Cu 3 O 7 (YBECO) multilayers are studied. The lattice constants for each sub-layer decrease with decreasing the temperature. The morphology of the films depends on the thickness of each sub-layer. Grains growing on the surface of each sample are believed to release the lattice strain. We believe that the lattice strain may affect the transport properties of LCMO and YBECO in the periodic films. The grains appearing on the surface of the film may enlarge the width of the superconducting transition of YBECO, and the metal-to-insulator transition of LCMO.

Spectroscopic Diagnostics of Tokamaks

1988 ◽  
Vol 102 ◽  
pp. 165-174
Author(s):  
C. de Michelis
Keyword(s):  
Transport Properties ◽  
Power Losses ◽  
Spectroscopic Diagnostics ◽  
Important Concern

AbstractImpurities being an important concern in tokamaks, spectroscopy plays a key role in their understanding. Techniques for the evaluation of concentrations, power losses and transport properties are surveyed, and a few developments are outlined.

Structure and Orientation of As Precipitates in LT-MBE Grown GaAs

1991 ◽  
Vol 49 ◽  
pp. 900-901 ◽  
Author(s):  
Alain Claverie ◽  
Zuzanna Liliental-Weber
Keyword(s):  
Transport Properties ◽  
Layer Thickness ◽  
Growth Temperature ◽  
Low Temperatures ◽  
Lattice Parameter ◽  
Crystalline Quality ◽  
Insulating Properties ◽  
Lt Gaas

GaAs layers grown by MBE at low temperatures (in the 200°C range, LT-GaAs) have been reported to have very interesting electronic and transport properties. Previous studies have shown that, before annealing, the crystalline quality of the layers is related to the growth temperature. Lowering the temperature or increasing the layer thickness generally results in some columnar polycrystalline growth. For the best “temperature-thickness” combinations, the layers may be very As rich (up to 1.25%) resulting in an up to 0.15% increase of the lattice parameter, consistent with the excess As. Only after annealing are the technologically important semi-insulating properties of these layers observed. When annealed in As atmosphere at about 600°C a decrease of the lattice parameter to the substrate value is observed. TEM studies show formation of precipitates which are supposed to be As related since the average As concentration remains almost unchanged upon annealing.

Modification of structural and transport properties in epitaxial YBa2CU3Ox films by pulsed laser irradiation

1993 ◽  
Vol 3 (12) ◽  
pp. 2173-2188
Author(s):  
N. G. Chechenin ◽  
A. V. Chernysh ◽  
V. V. Korneev ◽  
E. V. Monakhov ◽  
B. V. Seleznev
Keyword(s):  
Transport Properties ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Pulsed Laser Irradiation
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