Determination at 300K of the hole capture cross section of chromium-boron pairs in p-type silicon

2006 ◽  
Vol 89 (23) ◽  
pp. 232112 ◽  
Author(s):  
S. Dubois ◽  
O. Palais ◽  
P. J. Ribeyron
Keyword(s):  
Cross Section ◽  
Capture Cross Section ◽  
Capture Cross ◽  
Hole Capture ◽  
Type Silicon ◽  
P Type

Thermal capture cross-section of free electrons at neutral gold centres in n-type silicon

1976 ◽  
Vol 36 (2) ◽  
pp. 495-498 ◽  
Author(s):  
J. Barbolla ◽  
M. Pugnet ◽  
J. C. Brabant ◽  
M. Brousseau
Keyword(s):  
Cross Section ◽  
Capture Cross Section ◽  
Capture Cross ◽  
Free Electrons ◽  
Type Silicon

Hole-capture cross section ofDXcenters inGa1−xAlxAs

1991 ◽  
Vol 44 (15) ◽  
pp. 7987-7992 ◽  
Author(s):  
M. A. Zaidi ◽  
H. Maaref ◽  
M. Zazoui ◽  
J. C. Bourgoin
Keyword(s):  
Cross Section ◽  
Capture Cross Section ◽  
Capture Cross ◽  
Hole Capture

Method for the determination of the hole capture cross section of class II centres in C

1974 ◽  
Vol 24 (1) ◽  
pp. K63-K66 ◽  
Author(s):  
N. A. Blazhko ◽  
V. A. Khvostov ◽  
E. A. Salkov
Keyword(s):  
Cross Section ◽  
Capture Cross Section ◽  
Class Ii ◽  
Capture Cross ◽  
Hole Capture

Hole capture cross section on CdS photoelectrodes

1987 ◽  
Vol 32 (4) ◽  
pp. 557-562 ◽  
Author(s):  
R.R. Pradhananga ◽  
K. Jüttner
Keyword(s):  
Cross Section ◽  
Capture Cross Section ◽  
Capture Cross ◽  
Hole Capture

Grain Boundary Passivation in Polycrystalline Silicon : A D.L.T.S. Study

1981 ◽  
Vol 5 ◽  
Author(s):  
Prakash C. Srivastava ◽  
Jacques C. Bourgoin
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Cross Section ◽  
Polycrystalline Silicon ◽  
Capture Cross Section ◽  
Narrow Band ◽  
Total Density ◽  
Capture Cross ◽  
Deuterium Plasma ◽  
P Type

ABSTRACTAfter treatment in a deuterium plasma, the D.L.T.S. spectrum associated with grain boundaries in p–type Si is found to reduce to a narrow band centered at 0.32 ± 0.02 eV with a total density of 5 ⨉ 1015 cm−2 . However, the capture cross-section, measured to be ∼ 2 × 10−20 cm2 , is 10 times larger than the apparent cross-section associated with the states present in unpassivated material.

Shallow and Deep Levels in Al+-Implanted p-Type 4H-SiC Measured by Thermal Admittance Spectroscopy

2015 ◽  
Vol 821-823 ◽  
pp. 403-406 ◽  
Author(s):  
Koutarou Kawahara ◽  
Hiroshi Watanabe ◽  
Naruhisa Miura ◽  
Shuhei Nakata ◽  
Satoshi Yamakawa
Keyword(s):  
Cross Section ◽  
Ionization Energy ◽  
Capture Cross Section ◽  
Deep Levels ◽  
Admittance Spectroscopy ◽  
Capture Cross ◽  
Shallow Acceptor ◽  
Wide Range ◽  
Emission Time ◽  
P Type

Shallow and deep levels in SiC significantly affect dynamic characteristics of SiC devices; larger ionization energy and/or a smaller capture cross-section of levels in the SiC bandgap lead to a larger emission time constant and slower response of carriers. Nevertheless, knowledge about those levels is very limited. In this study, we clarified the ionization energy and the capture cross section of the Al shallow acceptor in 4H-SiC in a wide range of doping concentration by preparing appropriate samples and measuring them by thermal admittance spectroscopy. Furthermore, high densities of deep levels were discovered in Al+-implanted samples, which can degrade 4H-SiC device performance without any care.

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