scholarly journals Improvement in electrical characteristics of high-k Al2O3 gate dielectric by field-assisted nitric oxidation

2006 ◽  
Vol 89 (23) ◽  
pp. 232903 ◽  
Author(s):  
Kai-Chieh Chuang ◽  
Jenn-Gwo Hwu
Keyword(s):  
Gate Dielectric ◽  
Electrical Characteristics ◽  
High K ◽  
Al2o3 Gate Dielectric

Structural and electrical characteristics of Ge nanoclusters embedded in Al2O3 gate dielectric

2003 ◽  
Vol 82 (26) ◽  
pp. 4708-4710 ◽  
Author(s):  
Q. Wan ◽  
C. L. Lin ◽  
W. L. Liu ◽  
T. H. Wang
Keyword(s):  
Gate Dielectric ◽  
Electrical Characteristics ◽  
Al2o3 Gate Dielectric

Significant Improvement in Electrical Characteristics of FinFETs by Trilayer High-k Gate Dielectric

2018 ◽  
Author(s):  
S.H. Hsu ◽  
K.S. Chang-Liao ◽  
Y.L. Li ◽  
C.H. Huang ◽  
D.B. Ruan ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Electrical Characteristics ◽  
High K ◽  
High K Gate Dielectric

ISSUES, ACHIEVEMENTS AND CHALLENGES TOWARDS INTEGRATION OF HIGH-k DIELECTRICS

2002 ◽  
Vol 12 (02) ◽  
pp. 295-304 ◽  
Author(s):  
M. CAYMAX ◽  
S. DE GENDT ◽  
W. VANDERVORST ◽  
M. HEYNS ◽  
H. BENDER ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
Gate Dielectric ◽  
Deposition Process ◽  
Interface Layer ◽  
Layer Growth ◽  
Electrical Characteristics ◽  
High K ◽  
Alternative Materials ◽  
High K Materials ◽  
Electrical Reliability

Once the thickness of the gate dielectric layer in CMOS devices gets thinner than 1.2 nm, excessive gate leakage due to direct tunneling makes the use of alternative materials obligatory. Candidate high-k materials are metal oxides such as Al 2 O 3, ZrO 2 and HfO 2 as well as their mixtures. Very promising results have been reported world-wide. Here, however, we show that there are a number of issues related to materials and electrical characteristics as well as to processing which are not always recognized and that necessitate more work to find solutions. Among these are problems with density, interface layer growth and island formation which are clearly related to the deposition process. Also thermal instabilities as well as interactions between the high-k material and poly-Si need attention. Further possible show-stoppers are electrical reliability issues and strongly reduced carrier mobility.

Electrical Characteristics of TaOxNy for High-k MOS Gate Dielectric Applications

2000 ◽  
Vol 611 ◽  
Author(s):  
Kiju Im ◽  
Hyungsuk Jung ◽  
Sanghun Jeon ◽  
Dooyoung Yang ◽  
Hyunsang Hwang
Keyword(s):  
Electron Spectroscopy ◽  
Gate Dielectric ◽  
Tantalum Oxide ◽  
Charge Trapping ◽  
Oxide Thickness ◽  
Electrical Characteristics ◽  
Equivalent Oxide Thickness ◽  
Ammonia Treatment ◽  
High K ◽  
Mos Gate

ABSTRACTIn this paper, we report a process for the preparation of high quality amorphous tantalum oxynitride (TaOxNy) via ammonia annealing of Ta2O5 followed by wet reoxidation for use in gate dielectric applications. Compared with tantalum oxide(Ta2O5), a significant improvement in the dielectric constant was obtained by the ammonia treatment followed by light reoxidation in a wet ambient. We confirmed nitrogen incorporation in the tantalum oxynitride (TaOxNy) by Auger Electron Spectroscopy. By optimizing the nitridation and reoxidation process, we obtained an equivalent oxide thickness of less than 1.6nm and a leakage current of less than 10mA/cm2 at -1.5V. Compared with NH3 nitridation, nitridation of Ta2O5 in ND3 improve charge trapping and charge-to-breakdown characteristics of tantalum oxynitride.

Effects of Plasma Nitrided Trilayer High-k Gate Dielectric on Electrical Characteristics of FinFET

2019 ◽  
Author(s):  
K.-Y. Lai ◽  
K.-S. Chang-Liao ◽  
Y.-L. Li ◽  
D.-B. Ruan ◽  
S.-H. Hsu ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Electrical Characteristics ◽  
High K ◽  
High K Gate Dielectric

Novel Dielectric Materials for Future Transistor Generations

2006 ◽  
Vol 16 (01) ◽  
pp. 221-239 ◽  
Author(s):  
GENNADI BERSUKER ◽  
BYOUNG HUN LEE ◽  
HOWARD R. HUFF
Keyword(s):  
Gate Dielectric ◽  
Dielectric Materials ◽  
Structural Defects ◽  
Electrical Characteristics ◽  
Si Substrate ◽  
Voltage Instability ◽  
Fixed Charges ◽  
High K ◽  
High K Materials

Relations between the electronic properties of high-k materials and electrical characteristics of high-k transistor are discussed. It is pointed out that the intrinsic limitations of these materials from the standpoint of gate dielectric applications are related to the presence of d-electrons, which facilitate high values of the dielectric constant. It is shown that the presence of structural defects responsible for electron trapping and fixed charges, and the dielectrics' tendency for crystallization and phase separation induce threshold voltage instability and mobility degradation in high-k transistors. The quality of the SiO 2-like layer at the high-k/ Si substrate interface, as well as dielectric interaction with the gate electrode, may significantly affect device characteristics.

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