scholarly journals Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films

2006 ◽  
Vol 89 (24) ◽  
pp. 242114 ◽  
Author(s):  
H. Béa ◽  
M. Bibes ◽  
S. Cherifi ◽  
F. Nolting ◽  
B. Warot-Fonrose ◽  
...  
Keyword(s):  
Thin Films ◽  
Exchange Bias ◽  
Room Temperature ◽  
Epitaxial Thin Films ◽  
Tunnel Magnetoresistance ◽  
Multiferroic Bifeo3 ◽  
Temperature Exchange

Influence of Momentary Annealing on the Nanoscale Surface Morphology of Room Temperature Pulsed Laser Deposited NiO(111) Epitaxial Thin Films on Atomically Stepped Sapphire (0001) Substrates

2013 ◽  
Vol 1507 ◽  
Author(s):  
Ryosuke Yamauchi ◽  
Geng Tan ◽  
Daishi Shiojiri ◽  
Nobuo Tsuchimine ◽  
Koji Koyama ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Film Surface ◽  
Transient State ◽  
Epitaxial Thin Films ◽  
Flat Surfaces ◽  
Surface Nanostructure ◽  
Atomically Flat

ABSTRACTWe examined the influence of momentary annealing on the nanoscale surface morphology of NiO(111) epitaxial thin films deposited on atomically stepped sapphire (0001) substrates at room temperature in O2 at 1.3 × 10−3 and 1.3 × 10−6 Pa using a pulsed laser deposition (PLD) technique. The NiO films have atomically flat surfaces (RMS roughness: approximately 0.1–0.2 nm) reflecting the step-and-terrace structures of the substrates, regardless of the O2 deposition pressure. After rapid thermal annealing (RTA) of the NiO(111) epitaxial film deposited at 1.3 × 10−3 Pa O2, a periodic straight nanogroove array related to the atomic steps of the substrate was formed on the film surface for 60 s. In contrast, the fabrication of a transient state in the nanogroove array formation was achieved with RTA of less than 1 s. However, when the O2 atmosphere during PLD was 1.3 × 10−6 Pa, random crystal growth was observed and resulted in a disordered rough surface nanostructure after RTA.

Room temperature ferromagnetism and ferroelectricity in strained multiferroic BiFeO3 thin films on La0.7Sr0.3MnO3/SiO2/Si substrates

2017 ◽  
Vol 128 ◽  
pp. 451-464 ◽  
Author(s):  
M.C. Ramírez-Camacho ◽  
C.F. Sánchez-Valdés ◽  
J.J. Gervacio-Arciniega ◽  
R. Font ◽  
C. Ostos ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Si Substrates ◽  
Bifeo3 Thin Films ◽  
Multiferroic Bifeo3

scholarly journals Room temperature exchange bias in antiferromagnetic composite BiFeO3-TbMnO3

2019 ◽  
Vol 126 (24) ◽  
pp. 243903
Author(s):  
Prince K. Gupta ◽  
Surajit Ghosh ◽  
Shiv Kumar ◽  
Arkadeb Pal ◽  
Prajyoti Singh ◽  
...  
Keyword(s):  
Exchange Bias ◽  
Room Temperature ◽  
Temperature Exchange

Co-doped SrSnO3 epitaxial thin films on MgO with tunable band gap and room-temperature ferromagnetism

2019 ◽  
Vol 109 ◽  
pp. 101-106 ◽  
Author(s):  
Dongsheng Gao ◽  
Xiangdong Gao ◽  
Yongqing Wu ◽  
Tongtong Zhang ◽  
Jingnan Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Epitaxial Thin Films ◽  
Tunable Band Gap ◽  
Co Doped

Chemistry, microstructure, and electrical properties at interfaces between thin films of titanium and alpha (6H) silicon carbide (0001)

1995 ◽  
Vol 10 (3) ◽  
pp. 668-679 ◽  
Author(s):  
L.M. Porter ◽  
R.F. Davis ◽  
J.S. Bow ◽  
M.J. Kim ◽  
R.W. Carpenter ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Electron Beam Evaporation ◽  
Epitaxial Thin Films ◽  
Interfacial Chemistry ◽  
Barrier Heights ◽  
High Resolution Tem ◽  
Reaction Zones

Epitaxial thin films (4–1000 Å) of Ti contacts have been deposited via UHV electron beam evaporation at room temperature on monocrystalline, n-type, alpha (6H)-SiC(0001). The interfacial chemistry and microstructure, and the electrical properties, were investigated at room temperature and after annealing at 700 °C up to 60 min. High resolution TEM analyses revealed the formation during annealing of reaction zones consisting of Ti5Si3 and TiC. The corresponding electrical properties exhibited considerable stability except after an initial 20 min anneal. Current-voltage (I-V) measurements showed that the Ti contacts were rectifying with low ideality factors (n < 1.09) and typical leakage currents of 5 × 10−7 A/cm2 at −10 V. The Schottky barrier heights calculated from x-ray photoelectron spectroscopy and I-V and V-V measurements were between 0.79 and 0.88 eV for the as-deposited contacts and between 0.86 and 1.04 eV for the annealed contacts.

scholarly journals Deterministic and robust room-temperature exchange coupling in monodomain multiferroic BiFeO3 heterostructures

2017 ◽  
Vol 8 (1) ◽  
Author(s):  
W. Saenrang ◽  
B. A. Davidson ◽  
F. Maccherozzi ◽  
J. P. Podkaminer ◽  
J. Irwin ◽  
...  
Keyword(s):  
Exchange Coupling ◽  
Room Temperature ◽  
Multiferroic Bifeo3 ◽  
Temperature Exchange
Sign in / Sign up

Export Citation Format

Share Document