Local resistance measurement on polycrystalline silicon layer in low-temperature poly-Si thin film transistor using scanning spreading resistance microscopy

2006 ◽  
Author(s):  
S. Abo ◽  
H. Yamagiwa ◽  
K. Tanaka ◽  
F. Wakaya ◽  
T. Sakamoto ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Silicon Layer ◽  
Resistance Measurement ◽  
Local Resistance ◽  
Spreading Resistance ◽  
Si Thin Film

3.5-Inch QCIF AMOLED Panels with Ultra-low-Temperature Polycrystalline Silicon Thin Film Transistor on Plastic Substrate

ETRI Journal ◽  
2008 ◽  
Vol 30 (2) ◽  
pp. 308-314 ◽  
Author(s):  
Yong-Hae Kim ◽  
Choong-Heui Chung ◽  
Jaehyun Moon ◽  
Su-Jae Lee ◽  
Gi Heon Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Plastic Substrate ◽  
Silicon Thin Film

Low temperature polycrystalline silicon thin film transistor with silicon nitride ion stopper

1996 ◽  
Vol 17 (6) ◽  
pp. 258-260 ◽  
Author(s):  
Kyung Ha Lee ◽  
Young Min Jhon ◽  
Hyuk Jin Cha ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Low Temperature ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film

High-Quality SiO2/Si Interface Formation and Its Application to Fabrication of Low-Temperature-Processed Polycrystalline Si Thin-Film Transistor

2002 ◽  
Vol 41 (Part 1, No. 6A) ◽  
pp. 3646-3650 ◽  
Author(s):  
Seiichiro Higashi ◽  
Daisuke Abe ◽  
Yasushi Hiroshima ◽  
Kazuyuki Miyashita ◽  
Takahiro Kawamura ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistor ◽  
Interface Formation ◽  
High Quality ◽  
Si Thin Film

scholarly journals Improvement in pH Sensitivity of Low-Temperature Polycrystalline-Silicon Thin-Film Transistor Sensors Using H2 Sintering

Sensors ◽  
2014 ◽  
Vol 14 (3) ◽  
pp. 3825-3832 ◽  
Author(s):  
Li-Chen Yen ◽  
Ming-Tsyr Tang ◽  
Fang-Yu Chang ◽  
Tung-Ming Pan ◽  
Tien-Sheng Chao ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Ph Sensitivity ◽  
Silicon Thin Film

Residual Ion Implantation Damage at Source/Drain Junctions of Excimer Laser Annealed Polycrystalline Silicon Thin Film Transistor

2002 ◽  
Vol 715 ◽  
Author(s):  
Kee-Chan Park ◽  
Jae-Shin Kim ◽  
Woo-Jin Nam ◽  
Min-Koo Han
Keyword(s):  
Thin Film ◽  
Ion Implantation ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Silicon Layer ◽  
Silicon Thin Film ◽  
Cross Sectional ◽  
Implantation Damage ◽  
Transmission Electron

AbstractResidual ion implantation damage at source/drain junctions of excimer laser annealed polycrystalline silicon (poly-Si) thin film transistor (TFT) was investigated by high-resolution transmission electron microscopy (HR-TEM). Cross-sectional TEM observation showed that XeCl excimer laser (λ=308 nm) energy decreased considerably at the source/drain junctions of top-gated poly-Si TFT due to laser beam diffraction at the gate electrode edges and that the silicon layer amorphized by ion implantation, was not completely annealed at the juncions. The HR-TEM observation showed severe lattice disorder at the junctions of poly-Si TFT.

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