Streak Camera 101: Visualizing Charged-Particle Beam Dynamics

2006 ◽  
Author(s):  
Bingxin Yang
Keyword(s):  
Charged Particle ◽  
Streak Camera ◽  
Particle Beam ◽  
Beam Dynamics ◽  
Charged Particle Beam

Analysis and Modeling of the Charged Particle Beam Dynamics in the Charlton Trap

2018 ◽  
Vol 15 (7) ◽  
pp. 754-757
Author(s):  
A. D. Ovsyannikov ◽  
I. N. Meshkov ◽  
D. A. Ovsyannikov ◽  
M. K. Eseev
Keyword(s):  
Charged Particle ◽  
Particle Beam ◽  
Beam Dynamics ◽  
Charged Particle Beam

MESOSCOPIC DESCRIPTION OF DYNAMICAL SYSTEMS: HIERARCHY OF RECURSIVE EQUATIONS FOR THE MOMENTS OF THE DENSITY DISTRIBUTION WITH AN APPLICATION TO CHARGED PARTICLE BEAM DYNAMICS

2004 ◽  
Vol 18 (04n05) ◽  
pp. 655-665
Author(s):  
SALVATORE DE MARTINO ◽  
SILVIO DE SIENA ◽  
RENATO FEDELE ◽  
STEPHAN TZENOV
Keyword(s):  
Charged Particle ◽  
Density Distribution ◽  
Particle Beam ◽  
High Order ◽  
Beam Dynamics ◽  
Charged Particle Beam ◽  
Recursion Relations ◽  
Control Stability ◽  
The One ◽  
Recursive Equations

The quantumlike formalism in the form of Madelung fluid has been applied to describe the collective dynamics of a mesoscopic aggregate of particles in a potential field. The scheme has been specialized to the one-degree-of-freedom dynamics of a charged particle beam in an accelerator in the presence of high-order multipole nonlinearities. A hierarchy of recursive equations satisfied by the moments of the density distribution has been obtained. It has been shown that the recursion relations can be in principle solved if a finite number of the first several moments is known. Beam dynamics in the presence of octupole and decapole nonlinearities has been studied as an example, demonstrating the above scheme. It has been shown that an appropriate mechanism can be introduced to control stability and coherence of states when high-order nonlinearities have to be taken into account.

scholarly journals Charged particle single nanometre manufacturing

2018 ◽  
Vol 9 ◽  
pp. 2855-2882 ◽  
Author(s):  
Philip D Prewett ◽  
Cornelis W Hagen ◽  
Claudia Lenk ◽  
Steve Lenk ◽  
Marcus Kaestner ◽  
...  
Keyword(s):  
Charged Particle ◽  
High Throughput ◽  
Nanoimprint Lithography ◽  
Ion Beam ◽  
Ambient Air ◽  
Particle Beam ◽  
Vacuum System ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Charged Particle Beam

Following a brief historical summary of the way in which electron beam lithography developed out of the scanning electron microscope, three state-of-the-art charged-particle beam nanopatterning technologies are considered. All three have been the subject of a recently completed European Union Project entitled “Single Nanometre Manufacturing: Beyond CMOS”. Scanning helium ion beam lithography has the advantages of virtually zero proximity effect, nanoscale patterning capability and high sensitivity in combination with a novel fullerene resist based on the sub-nanometre C60 molecule. The shot noise-limited minimum linewidth achieved to date is 6 nm. The second technology, focused electron induced processing (FEBIP), uses a nozzle-dispensed precursor gas either to etch or to deposit patterns on the nanometre scale without the need for resist. The process has potential for high throughput enhancement using multiple electron beams and a system employing up to 196 beams is under development based on a commercial SEM platform. Among its potential applications is the manufacture of templates for nanoimprint lithography, NIL. This is also a target application for the third and final charged particle technology, viz. field emission electron scanning probe lithography, FE-eSPL. This has been developed out of scanning tunneling microscopy using lower-energy electrons (tens of electronvolts rather than the tens of kiloelectronvolts of the other techniques). It has the considerable advantage of being employed without the need for a vacuum system, in ambient air and is capable of sub-10 nm patterning using either developable resists or a self-developing mode applicable for many polymeric resists, which is preferred. Like FEBIP it is potentially capable of massive parallelization for applications requiring high throughput.

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