Nanosilicon dot arrays with a bit pitch and a track pitch of 25nm formed by electron-beam drawing and reactive ion etching for 1Tbit∕in.2 storage
2019 ◽
Vol 6
(6)
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pp. 065402
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1983 ◽
Vol 1
(4)
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pp. 1174
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2011 ◽
Vol 29
(2)
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pp. 021601
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2011 ◽
Vol 88
(8)
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pp. 2710-2713
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1995 ◽
Vol 13
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pp. 2850
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