Hole transport in p-type ZnO films grown by plasma-assisted molecular beam epitaxy

2006 ◽  
Vol 89 (23) ◽  
pp. 232101 ◽  
Author(s):  
J. W. Sun ◽  
Y. M. Lu ◽  
Y. C. Liu ◽  
D. Z. Shen ◽  
Z. Z. Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Hole Transport ◽  
Zno Films ◽  
P Type

p-type ZnO films with solid-source phosphorus doping by molecular-beam epitaxy

2006 ◽  
Vol 88 (5) ◽  
pp. 052106 ◽  
Author(s):  
F. X. Xiu ◽  
Z. Yang ◽  
L. J. Mandalapu ◽  
J. L. Liu ◽  
W. P. Beyermann
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zno Films ◽  
Phosphorus Doping ◽  
P Type

Nitrogen-related recombination mechanisms in p-type ZnO films grown by plasma-assisted molecular beam epitaxy

2007 ◽  
Vol 102 (4) ◽  
pp. 043522 ◽  
Author(s):  
J. W. Sun ◽  
Y. M. Lu ◽  
Y. C. Liu ◽  
D. Z. Shen ◽  
Z. Z. Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zno Films ◽  
P Type

Investigation on non-polar m-plane ZnO and Na-doped p-type ZnO films grown by plasma-assisted molecular beam epitaxy

2015 ◽  
Vol 121 (1) ◽  
pp. 77-82 ◽  
Author(s):  
W. Chen ◽  
X. H. Pan ◽  
S. S. Chen ◽  
H. P. He ◽  
J. Y. Huang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zno Films ◽  
P Type

p-type non-polar m-plane ZnO films grown by plasma-assisted molecular beam epitaxy

2011 ◽  
Vol 331 (1) ◽  
pp. 15-17 ◽  
Author(s):  
P. Ding ◽  
X.H. Pan ◽  
J.Y. Huang ◽  
H.P. He ◽  
B. Lu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zno Films ◽  
P Type

Photoluminescence study of Sb-doped p-type ZnO films by molecular-beam epitaxy

2005 ◽  
Vol 87 (25) ◽  
pp. 252102 ◽  
Author(s):  
F. X. Xiu ◽  
Z. Yang ◽  
L. J. Mandalapu ◽  
D. T. Zhao ◽  
J. L. Liu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zno Films ◽  
Photoluminescence Study ◽  
P Type

p-Type Conductivity Control in ZnO Films Grown by Molecular-Beam Epitaxy

2016 ◽  
Vol 857 ◽  
pp. 131-135
Author(s):  
Seung Hwan Park ◽  
Dong Cheol Oh ◽  
Chul Gyu Jhun ◽  
Seung Oh Han ◽  
Takafumi Yao
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Electron Concentration ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Hole Mobility ◽  
Zno Films ◽  
Type Conductivity ◽  
Donor Type ◽  
P Type

We report on the p-type conductivity control using N and Te codoping and thermal annealing in the ZnO films, heteroepitaxially grown on Al2O3 substrates and homoepitaxially grown on ZnO substrates by molecular-beam epitaxy, respectively. The N and Te codoping and the homoepitaxy effectively reduce the background electron concentration in ZnO films due to the suppression of various defect generation, and the thermal annealing causes the conductivity conversion from n-type to p-type due to the activation of N-related defects and the annihilation of donor-type defects. The p-type conductivity with a hole concentration of 1.61016 cm-3 and a hole mobility of 16 cm2/Vsec is obtained in the ZnO:N+T film grown on the Al2O3 substrate and the p-type conductivity with a hole concentration of 4.01016 cm-3 and a hole mobility of 11 cm2/Vsec is obtained in the ZnO:N+Te film grown on the ZnO substrate.

Molecular beam epitaxy of p-type ZnSTe:N and p-n-junction light emitting diodes

2014 ◽  
Vol 11 (7-8) ◽  
pp. 1282-1285 ◽  
Author(s):  
Kunio Ichino ◽  
Takahiro Kojima ◽  
Shunsuke Obata ◽  
Takuma Kuroyanagi ◽  
Kenta Kimata ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
P Type
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