Analysis of the residual stresses, the biaxial modulus, and the interfacial fracture energy of low-k dielectric thin films

2006 ◽  
Vol 100 (10) ◽  
pp. 103510 ◽  
Author(s):  
Fouad Atrash ◽  
Dov Sherman
Keyword(s):  
Thin Films ◽  
Residual Stresses ◽  
Fracture Energy ◽  
Interfacial Fracture ◽  
Dielectric Thin Films ◽  
Interfacial Fracture Energy ◽  
Low K

Adhesive Failure of a Thin Epoxy Film on an Aluminized Substrate

2000 ◽  
Vol 649 ◽  
Author(s):  
N. R. Moody ◽  
D. F. Bahr ◽  
M. S. Kent ◽  
J. A. Emerson ◽  
E. D. Reedy
Keyword(s):  
Mechanical Properties ◽  
Residual Stress ◽  
Residual Stresses ◽  
Fracture Energy ◽  
Glass Substrate ◽  
Compressive Residual Stress ◽  
Interfacial Fracture ◽  
Adhesive Failure ◽  
Blister Formation ◽  
Interfacial Fracture Energy

ABSTRACTIn this study we used nanoindentation to determine mechanical properties and combined nanoindentation with stressed overlayers to determine interfacial fracture energy of a 164 nm thick film of Epon 828/T403 on an aluminized glass substrate. The combination of nanoindentation and a tungsten overlayer was required to trigger delamination of the epoxy film from the aluminized substrate. Mechanics-based models for circular blister formation were then used to determine residual stresses and interfacial fracture energies. This approach showed that the tungsten overlayer had a compressive residual stress of 1.9 GPa which drove blister formation at a fracture energy of 1.9 J/m2 with a phase angle of loading equal to –62°.

Finite-Element Modeling and Quantitative Measurement Using Scanning Microwave Microscopy to Characterize Dielectric Films

2018 ◽  
Author(s):  
K. A. Rubin ◽  
W. Jolley ◽  
Y. Yang
Keyword(s):  
Thin Films ◽  
Dielectric Film ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Fem Modeling ◽  
Dielectric Thin Films ◽  
Microwave Microscopy ◽  
Scanning Microwave Microscopy ◽  
Low K

Abstract Scanning Microwave Impedance Microscopy (sMIM) can be used to characterize dielectric thin films and to quantitatively discern film thickness differences. FEM modeling of the sMIM response provides understanding of how to connect the measured sMIM signals to the underlying properties of the dielectric film and its substrate. Modeling shows that sMIM can be used to characterize a range of dielectric film thicknesses spanning both low-k and medium-k dielectric constants. A model system consisting of SiO2 thin films of various thickness on silicon substrates is used to illustrate the technique experimentally.

Studies of the Coefficient of Thermal Expansion of Low-k ILD Materials by X-Ray Reflectivity

2006 ◽  
Vol 914 ◽  
Author(s):  
George Andrew Antonelli ◽  
Tran M. Phung ◽  
Clay D. Mortensen ◽  
David Johnson ◽  
Michael D. Goodner ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Coefficient Of Thermal Expansion ◽  
Chemical Vapor ◽  
Dielectric Materials ◽  
Free Standing ◽  
Dielectric Thin Films ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
Low K

AbstractThe electrical and mechanical properties of low-k dielectric materials have received a great deal of attention in recent years; however, measurements of thermal properties such as the coefficient of thermal expansion remain minimal. This absence of data is due in part to the limited number of experimental techniques capable of measuring this parameter. Even when data does exist, it has generally not been collected on samples of a thickness relevant to current and future integrated processes. We present a procedure for using x-ray reflectivity to measure the coefficient of thermal expansion of sub-micron dielectric thin films. In particular, we elucidate the thin film mechanics required to extract this parameter for a supported film as opposed to a free-standing film. Results of measurements for a series of plasma-enhanced chemical vapor deposited and spin-on low-k dielectric thin films will be provided and compared.

Sign in / Sign up

Export Citation Format

Share Document