scholarly journals Bright contrast imaging of carbon nanofiber-substrate interface

2006 ◽  
Vol 100 (10) ◽  
pp. 104305 ◽  
Author(s):  
Makoto Suzuki ◽  
Yusuke Ominami ◽  
Quoc Ngo ◽  
Cary Y. Yang ◽  
Toshishige Yamada ◽  
...  
Keyword(s):  
Carbon Nanofiber ◽  
Contrast Imaging ◽  
Substrate Interface ◽  
Bright Contrast

Bright Contrast Imaging of Carbon Nanofiber-Substrate Interface using Scanning Electron Microscopy

2006 ◽  
Vol 963 ◽  
Author(s):  
Makoto Suzuki ◽  
Yusuke Ominami ◽  
Quoc Ngo ◽  
Toshishige Yamada ◽  
Bill Roth ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electron Beam ◽  
Carbon Nanofiber ◽  
Contrast Imaging ◽  
Bright Contrast ◽  
Gap Height ◽  
Scanning Electron

ABSTRACTScanning electron microscopy (SEM) for imaging the interface between carbon nanofibers (CNFs) and the underlying substrate is presented. By irradiating the electron beam perpendicular to the substrate, bright contrast is observed at the region where a small gap exists between the CNF and substrate. The energy-diameter diagram for the observation of the bright contrast is derived, which can be understood by using the theory of electron penetration into solid. Monte Carlo simulation is performed to reproduce the experimental observation based on our model, and the contrast sensitivity to the gap height is discussed.

Secondary electron imaging of YBa2Cu3O7-x high-Tc superconductors in Scanning Transmission Electron Microscope

1989 ◽  
Vol 47 ◽  
pp. 684-685
Author(s):  
D. R. Liu ◽  
D. B. Williams
Keyword(s):  
Electron Microscope ◽  
Secondary Electron ◽  
Scanning Transmission Electron Microscope ◽  
Superconducting Phase ◽  
Contrast Imaging ◽  
High Tc ◽  
Bright Contrast ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Electron Imaging

The secondary electron imaging technique in a scanning electron microscope (SEM) has been used first by Millman et al. in 1987 to distinguish between the superconducting phase and the non-superconducting phase of the YBa2Cu3O7-x superconductors. They observed that, if the sample was cooled down below the transition temperature Tc and imaged with secondary electrons, some regions in the image would show dark contrast whereas others show bright contrast. In general, the contrast variation of a SEM image is the variation of the secondary electron yield over a specimen, which in turn results from the change of topography and conductivity over the specimen. Nevertheless, Millman et al. were able to demonstrate with their experimental results that the dominant contrast mechanism should be the conductivity variation and that the regions of dark contrast were the superconducting phase whereas the regions of bright contrast were the non-superconducting phase, because the latter was a poor conductor and consequently, the charge building-up resulted in high secondary electron emission. This observation has since aroused much interest amoung the people in electron microscopy and high Tc superconductivity. The present paper is the preliminary report of our attempt to carry out the secondary electron imaging of this material in a scanning transmission electron microscope (STEM) rather than in a SEM. The advantage of performing secondary electron imaging in a TEM is obvious that, in a TEM, the spatial resolution is higher and many more complementary techniques, e.g, diffraction contrast imaging, phase contrast imaging, electron diffraction and various microanalysis techniques, are available.

“High Resolution High Voltage Electron Microscopy”

1968 ◽  
Vol 26 ◽  
pp. 326-327
Author(s):  
Benjamin M. Siegel
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Voltage ◽  
Full Potential ◽  
Contrast Imaging ◽  
High Voltage Electron Microscopy ◽  
Low Contrast ◽  
Voltage Electron ◽  
Critical Areas ◽  
High Voltage Electron

The potential advantages of high voltage electron microscopy for extending the limits of resolution and contrast in imaging low contrast objects, such as biomolecular specimens, is very great. The results of computations will be presented showing that at accelerating voltages of 500-1000 kV it should be possible to achieve spacial resolutions of 1 to 1.5 Å and using phase contrast imaging achieve adequate image contrast to observe single atoms of low atomic number.The practical problems associated with the design and utilization of the high voltage instrument are, optimistically, within the range of competence of the state of the art. However, there are some extremely important and critical areas to be systematically investigated before we have achieved this competence. The basic electron optics of the column required is well understood, but before the full potential of an instrument capable of resolutions of better than 1.5 Å are realized some very careful development work will be required. Of great importance for the actual achievement of high resolution with a high voltage electron microscope is the fundamental limitation set by the characteristics of the high voltage electron beam that can be obtained from the accelerator column.

The CM120 Biotwin: a high-contrast objective lens, optimum cryo-vacuum and improved EDX performance

1995 ◽  
Vol 53 ◽  
pp. 584-585
Author(s):  
Uwe Lücken ◽  
Michael Felsmann ◽  
Wim M. Busing ◽  
Frank de Jong
Keyword(s):  
Life Science ◽  
Focal Length ◽  
Objective Lens ◽  
High Contrast ◽  
Contrast Imaging ◽  
X Ray ◽  
Forming Mechanism ◽  
Similar Image ◽  
High Contrast Imaging ◽  
Low Concentrations

A new microscope for the study of life science specimen has been developed. Special attention has been given to the problems of unstained samples, cryo-specimens and x-ray analysis at low concentrations.A new objective lens with a Cs of 6.2 mm and a focal length of 5.9 mm for high-contrast imaging has been developed. The contrast of a TWIN lens (f = 2.8 mm, Cs = 2 mm) and the BioTWTN are compared at the level of mean and SD of slow scan CCD images. Figure 1a shows 500 +/- 150 and Fig. 1b only 500 +/- 40 counts/pixel. The contrast-forming mechanism for amplitude contrast is dependent on the wavelength, the objective aperture and the focal length. For similar image conditions (same voltage, same objective aperture) the BioTWIN shows more than double the contrast of the TWIN lens. For phasecontrast specimens (like thin frozen-hydrated films) the contrast at Scherzer focus is approximately proportional to the √ Cs.

Complementary Z-Contrast Imaging and Digital Image Processing

1985 ◽  
Vol 43 ◽  
pp. 304-305
Author(s):  
K. N. Colonna ◽  
G. Oliphant
Keyword(s):  
Image Processing ◽  
Heavy Metal ◽  
Digital Image Processing ◽  
Digital Image ◽  
Biological Tissue ◽  
Biological Imaging ◽  
Tissue Preparation ◽  
Contrast Imaging ◽  
Imaging Tool ◽  
Z Contrast

Harmonious use of Z-contrast imaging and digital image processing as an analytical imaging tool was developed and demonstrated in studying the elemental constitution of human and maturing rabbit spermatozoa. Due to its analog origin (Fig. 1), the Z-contrast image offers information unique to the science of biological imaging. Despite the information and distinct advantages it offers, the potential of Z-contrast imaging is extremely limited without the application of techniques of digital image processing. For the first time in biological imaging, this study demonstrates the tremendous potential involved in the complementary use of Z-contrast imaging and digital image processing.Imaging in the Z-contrast mode is powerful for three distinct reasons, the first of which involves tissue preparation. It affords biologists the opportunity to visualize biological tissue without the use of heavy metal fixatives and stains. For years biologists have used heavy metal components to compensate for the limited electron scattering properties of biological tissue.

Strain analysis with nanometer resolution using a conventional transmission electron microsopy technique: electron diffraction contrast imaging revisited

1995 ◽  
Vol 53 ◽  
pp. 168-169
Author(s):  
Koenraad G F Janssens ◽  
Omer Van der Biest ◽  
Jan Vanhellemont ◽  
Herman E Maes ◽  
Robert Hull
Keyword(s):  
Electron Diffraction ◽  
Strain Field ◽  
Elastic Strain ◽  
Strain Analysis ◽  
Local Strain ◽  
Contrast Imaging ◽  
Strain Characterization ◽  
Physical Mechanisms ◽  
Diffraction Contrast ◽  
Transmission Electron

There is a growing need for elastic strain characterization techniques with submicrometer resolution in several engineering technologies. In advanced material science and engineering the quantitative knowledge of elastic strain, e.g. at small particles or fibers in reinforced composite materials, can lead to a better understanding of the underlying physical mechanisms and thus to an optimization of material production processes. In advanced semiconductor processing and technology, the current size of micro-electronic devices requires an increasing effort in the analysis and characterization of localized strain. More than 30 years have passed since electron diffraction contrast imaging (EDCI) was used for the first time to analyse the local strain field in and around small coherent precipitates1. In later stages the same technique was used to identify straight dislocations by simulating the EDCI contrast resulting from the strain field of a dislocation and comparing it with experimental observations. Since then the technique was developed further by a small number of researchers, most of whom programmed their own dedicated algorithms to solve the problem of EDCI image simulation for the particular problem they were studying at the time.

Recent applications of TEM to the study of interfaces

1990 ◽  
Vol 48 (4) ◽  
pp. 308-309
Author(s):  
C. Barry Carter
Keyword(s):  
High Resolution ◽  
Sample Preparation ◽  
Grain Boundaries ◽  
Diffuse Scattering ◽  
Imaging Techniques ◽  
Amorphous Material ◽  
Contrast Imaging ◽  
Current State ◽  
Actual Nature ◽  
High Resolution Images

This paper will review the current state of understanding of interface structure and highlight some of the future needs and problems which must be overcome. The study of this subject can be separated into three different topics: 1) the fundamental electron microscopy aspects, 2) material-specific features of the study and 3) the characteristics of the particular interfaces. The two topics which are relevant to most studies are the choice of imaging techniques and sample preparation. The techniques used to study interfaces in the TEM include high-resolution imaging, conventional diffraction-contrast imaging, and phase-contrast imaging (Fresnel fringe images, diffuse scattering). The material studied affects not only the characteristics of the interfaces (through changes in bonding, etc.) but also the method used for sample preparation which may in turn have a significant affect on the resulting image. Finally, the actual nature and geometry of the interface must be considered. For example, it has become increasingly clear that the plane of the interface is particularly important whenever at least one of the adjoining grains is crystalline.A particularly productive approach to the study of interfaces is to combine different imaging techniques as illustrated in the study of grain boundaries in alumina. In this case, the conventional imaging approach showed that most grain boundaries in ion-thinned samples are grooved at the grain boundary although the extent of this grooving clearly depends on the crystallography of the surface. The use of diffuse scattering (from amorphous regions) gives invaluable information here since it can be used to confirm directly that surface grooving does occur and that the grooves can fill with amorphous material during sample preparation (see Fig. 1). Extensive use of image simulation has shown that, although information concerning the interface can be obtained from Fresnel-fringe images, the introduction of artifacts through sample preparation cannot be lightly ignored. The Fresnel-fringe simulation has been carried out using a commercial multislice program (TEMPAS) which was intended for simulation of high-resolution images.

On the cross-sectional shape of the cellulose crystallites in the tunicate Halocynthia papillosa

1990 ◽  
Vol 48 (3) ◽  
pp. 566-567
Author(s):  
J.-F. Revol ◽  
Y. Van Daele ◽  
F. Gaill
Keyword(s):  
Contrast Imaging ◽  
Animal Kingdom ◽  
Bright Field ◽  
Field Mode ◽  
Cross Sectional ◽  
Ultrathin Sections ◽  
The Cross ◽  
Sectional Shape ◽  
Valonia Ventricosa ◽  
C Nmr

The only form of cellulose which could unequivocally be ascribed to the animal kingdom is the tunicin that occurs in the tests of the tunicates. Recently, high-resolution solid-state l3C NMR revealed that tunicin belongs to the Iβ form of cellulose as opposed to the Iα form found in Valonia and bacterial celluloses. The high perfection of the tunicin crystallites led us to study its crosssectional shape and to compare it with the shape of those in Valonia ventricosa (V.v.), the goal being to relate the cross-section of cellulose crystallites with the two allomorphs Iα and Iβ.In the present work the source of tunicin was the test of the ascidian Halocvnthia papillosa (H.p.). Diffraction contrast imaging in the bright field mode was applied on ultrathin sections of the V.v. cell wall and H.p. test with cellulose crystallites perpendicular to the plane of the sections. The electron microscope, a Philips 400T, was operated at 120 kV in a low intensity beam condition.

Atomic resolution Z-contrast imaging of bulk crystal surfaces in Scanning Reflection Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 414-415
Author(s):  
Z. L. Wang ◽  
J. Bentley
Keyword(s):  
Electron Microscopy ◽  
Elastic Scattering ◽  
Dark Field ◽  
Contrast Imaging ◽  
Crystal Lattices ◽  
Small Probe ◽  
Scanning Transmission ◽  
Annular Dark Field ◽  
Image Position ◽  
Z Contrast

The success of obtaining atomic-number-sensitive (Z-contrast) images in scanning transmission electron microscopy (STEM) has shown the feasibility of imaging composition changes at the atomic level. This type of image is formed by collecting the electrons scattered through large angles when a small probe scans across the specimen. The image contrast is determined by two scattering processes. One is the high angle elastic scattering from the nuclear sites,where ϕNe is the electron probe function centered at bp = (Xp, yp) after penetrating through the crystal; F denotes a Fourier transform operation; D is the detection function of the annular-dark-field (ADF) detector in reciprocal space u. The other process is thermal diffuse scattering (TDS), which is more important than the elastic contribution for specimens thicker than about 10 nm, and thus dominates the Z-contrast image. The TDS is an average “elastic” scattering of the electrons from crystal lattices of different thermal vibrational configurations,

High-resolution z-contrast imaging of semiconductor interfaces

1989 ◽  
Vol 47 ◽  
pp. 468-469
Author(s):  
S. J. Pennycook
Keyword(s):  
High Resolution ◽  
Phase Contrast ◽  
Contrast Imaging ◽  
Compositional Modulation ◽  
Semiconductor Interfaces ◽  
Complex Figure ◽  
Thin Region ◽  
Stem Image ◽  
Annular Detector ◽  
Z Contrast

Using a high-angle annular detector on a high-resolution STEM it is possible to form incoherent images of a crystal lattice characterized by strong atomic number or Z contrast. Figure 1 shows an epitaxial Ge film on Si(100) grown by oxidation of Ge-implanted Si. The image was obtained using a VG Microscopes' HB501 STEM equipped with an ultrahigh resolution polepiece (Cs ∽1.2 mm, demonstrated probe FWHM intensity ∽0.22 nm). In both crystals the lattice is resolved but that of Ge shows much brighter allowing the interface to be located exactly and interface steps to be resolved (arrowed). The interface was indistinguishable in the phase-contrast STEM image from the same region, and even at higher resolution the location of the interface is complex. Figure 2 shows a thin region of an MBE-grown ultrathin super-lattice (Si8Ge2)100. The expected compositional modulation would show as one bright row of dots from the 2 Ge monolayers separated by 4 rows of lighter Si columns. The image shows clearly that strain-induced interdiffusion has occurred on the monolayer scale.

Sign in / Sign up

Export Citation Format

Share Document