Theoretical study of nitrogen-doping effects on void formation processes in silicon crystal growth

2006 ◽  
Vol 100 (11) ◽  
pp. 113513 ◽  
Author(s):  
Hiroyuki Kageshima ◽  
Akihito Taguchi ◽  
Kazumi Wada
Keyword(s):  
Crystal Growth ◽  
Nitrogen Doping ◽  
Theoretical Study ◽  
Silicon Crystal ◽  
Void Formation ◽  
Formation Processes ◽  
Doping Effects

Enhanced nucleation of oxide precipitates during Czochralski silicon crystal growth with nitrogen doping

2000 ◽  
Vol 88 (6) ◽  
pp. 3705-3707 ◽  
Author(s):  
K. Aihara ◽  
H. Takeno ◽  
Y. Hayamizu ◽  
M. Tamatsuka ◽  
T. Masui
Keyword(s):  
Crystal Growth ◽  
Nitrogen Doping ◽  
Silicon Crystal ◽  
Czochralski Silicon

Thermal stress induced void formation during 450 mm defect free silicon crystal growth and implications for wafer inspection

2013 ◽  
Vol 102 (8) ◽  
pp. 082108 ◽  
Author(s):  
E. Kamiyama ◽  
J. Vanhellemont ◽  
K. Sueoka ◽  
K. Araki ◽  
K. Izunome
Keyword(s):  
Thermal Stress ◽  
Crystal Growth ◽  
Silicon Crystal ◽  
Void Formation ◽  
Wafer Inspection ◽  
Free Silicon

The development of an inspection system for defects in silicon crystal growth

2013 ◽  
Vol 20 (2) ◽  
pp. 224-226 ◽  
Author(s):  
Ya-Cheng Liu ◽  
Hsin-Yi Tsai ◽  
Min-Wei Hung ◽  
Kuo-Cheng Huang
Keyword(s):  
Crystal Growth ◽  
Silicon Crystal ◽  
Inspection System

Float-Zone silicon crystal growth at reduced RF frequencies

2012 ◽  
Vol 360 ◽  
pp. 43-46 ◽  
Author(s):  
H.-J. Rost ◽  
R. Menzel ◽  
A. Luedge ◽  
H. Riemann
Keyword(s):  
Crystal Growth ◽  
Silicon Crystal ◽  
Float Zone
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