Direct tunneling stress-induced leakage current in ultrathin HfO2∕SiO2 gate dielectric stacks

2006 ◽  
Vol 100 (9) ◽  
pp. 094507 ◽  
Author(s):  
Piyas Samanta ◽  
Tsz Yin Man ◽  
Qingchun Zhang ◽  
Chunxiang Zhu ◽  
Mansun Chan
Keyword(s):  
Leakage Current ◽  
Gate Dielectric ◽  
Direct Tunneling ◽  
Stress Induced Leakage Current

Low voltage stress-induced leakage current in 1.4–2.1 nm SiON and HfSiON gate dielectric layers

2005 ◽  
Vol 20 (8) ◽  
pp. 668-672 ◽  
Author(s):  
Robert O'Connor ◽  
Stephen McDonnell ◽  
Greg Hughes ◽  
Robin Degraeve ◽  
Thomas Kauerauf
Keyword(s):  
Leakage Current ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Dielectric Layers ◽  
Voltage Stress ◽  
Stress Induced Leakage Current

Direct tunneling gate leakage current in transistors with ultrathin silicon nitride gate dielectric

2000 ◽  
Vol 21 (11) ◽  
pp. 540-542 ◽  
Author(s):  
Yee Chia Yeo ◽  
Qiang Lu ◽  
Wen Chin Lee ◽  
Tsu-Jae King ◽  
Chenming Hu ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Leakage Current ◽  
Gate Dielectric ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Direct Tunneling

Degradation and SILC Effects of RPECVD sub-2.0nm Oxide/Nitride and Oxynitride Dielectrics Under Constant Current Stress

2002 ◽  
Vol 716 ◽  
Author(s):  
Yi-Mu Lee ◽  
Yider Wu ◽  
Joon Goo Hong ◽  
Gerald Lucovsky
Keyword(s):  
Leakage Current ◽  
Electrical Performance ◽  
Constant Current ◽  
Continuous Increase ◽  
Current Stress ◽  
Thermal Oxide ◽  
Stress Induced Leakage Current ◽  
Boron Penetration ◽  
Soft Breakdown ◽  
Induced Defects

AbstractConstant current stress (CCS) has been used to investigate the Stress-Induced Leakage Current (SILC) to clarify the influence of boron penetration and nitrogen incorporation on the breakdown of p-channel devices with sub-2.0 nm Oxide/Nitride (O/N) and oxynitride dielectrics prepared by remote plasma enhanced CVD (RPECVD). Degradation of MOSFET characteristics correlated with soft breakdown (SBD) and hard breakdown (HBD), and attributed to the increased gate leakage current are studied. Gate voltages were gradually decreased during SBD, and a continuous increase in SILC at low gate voltages between each stress interval, is shown to be due to the generation of positive traps which are enhanced by boron penetration. Compared to thermal oxides, stacked O/N and oxynitride dielectrics with interface nitridation show reduced SILC due to the suppression of boron penetration and associated positive trap generation. Devices stressed under substrate injection show harder breakdown and more severe degradation, implying a greater amount of the stress-induced defects at SiO2/substrate interface. Stacked O/N and oxynitride devices also show less degradation in electrical performance compared to thermal oxide devices due to an improved Si/SiO2 interface, and reduced gate-to-drain overlap region.

Correlation between stress-induced leakage current and dielectric degradation in ultra-porous SiOCH low-k materials

2015 ◽  
Vol 118 (16) ◽  
pp. 164101 ◽  
Author(s):  
Y. Li ◽  
A. Leśniewska ◽  
O. Varela Pedreira ◽  
J.-F. de Marneffe ◽  
I. Ciofi ◽  
...  
Keyword(s):  
Leakage Current ◽  
Stress Induced Leakage Current ◽  
Low K ◽  
Dielectric Degradation

Barium Zirconate Nickelate as the Gate Dielectric for Low-Leakage Current Organic Transistors

2018 ◽  
Vol 65 (2) ◽  
pp. 680-686 ◽  
Author(s):  
Cheng-Jung Lee ◽  
Ke-Jing Lee ◽  
Yu-Chi Chang ◽  
Li-Wen Wang ◽  
Der-Wei Chou ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Dielectric ◽  
Organic Transistors ◽  
Barium Zirconate ◽  
Low Leakage ◽  
Low Leakage Current
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