Composite free layer for high density magnetic random access memory with lower spin transfer current

2006 ◽  
Vol 89 (15) ◽  
pp. 152509 ◽  
Author(s):  
Hao Meng ◽  
Jian-Ping Wang
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
High Density ◽  
Spin Transfer ◽  
Free Layer ◽  
Access Memory ◽  
Magnetic Random Access Memory ◽  
Lower Spin

[Co/Ni]-CoFeB hybrid free layer stack materials for high density magnetic random access memory applications

2016 ◽  
Vol 108 (13) ◽  
pp. 132405 ◽  
Author(s):  
E. Liu ◽  
J. Swerts ◽  
S. Couet ◽  
S. Mertens ◽  
Y. Tomczak ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
High Density ◽  
Free Layer ◽  
Access Memory ◽  
Magnetic Random Access Memory ◽  
Memory Applications

Ion Beam Etching Technology for High-Density Spin Transfer Torque Magnetic Random Access Memory

2009 ◽  
Vol 48 (8) ◽  
pp. 08HD02 ◽  
Author(s):  
Kuniaki Sugiura ◽  
Shigeki Takahashi ◽  
Minoru Amano ◽  
Takeshi Kajiyama ◽  
Masayoshi Iwayama ◽  
...  
Keyword(s):  
Ion Beam ◽  
Random Access ◽  
Random Access Memory ◽  
Spin Transfer Torque ◽  
High Density ◽  
Spin Transfer ◽  
Access Memory ◽  
Ion Beam Etching ◽  
Magnetic Random Access Memory

WRITE ERROR RATE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY

SPIN ◽  
2012 ◽  
Vol 02 (03) ◽  
pp. 1240001 ◽  
Author(s):  
ZIHUI WANG ◽  
YUCHEN ZHOU ◽  
JING ZHANG ◽  
YIMING HUAI
Keyword(s):  
Error Rate ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Random Access Memory ◽  
Underlying Mechanism ◽  
Theoretical Description ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Access Memory ◽  
Magnetic Random Access Memory

This paper reviews the recent progress made to realize reliable write operations in spin transfer torque magnetic random access memory. Theoretical description of write error rate (WER) based on macro-spin models are discussed with comparison to experimental data. Recent studies on the phenomena that can lead to abnormal WER behaviors which include back-hopping and low probability bifurcated switching are reviewed with emphasis on underlying mechanism. The studies on the WER in perpendicular magnetic tunnel junction (MTJ) are also reviewed. It is demonstrated that, for both in-plane and perpendicular MTJ, reliable and error-free write operations can be achieved with thorough understanding of the underlying physics and innovative design/process solutions.

Precessional reversal in orthogonal spin transfer magnetic random access memory devices

2012 ◽  
Vol 101 (3) ◽  
pp. 032403 ◽  
Author(s):  
H. Liu ◽  
D. Bedau ◽  
D. Backes ◽  
J. A. Katine ◽  
A. D. Kent
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Spin Transfer ◽  
Memory Devices ◽  
Access Memory ◽  
Magnetic Random Access Memory
Sign in / Sign up

Export Citation Format

Share Document