Excitonic transfer in coupled InGaAs∕GaAs quantum well to InAs quantum dots

2006 ◽  
Vol 89 (15) ◽  
pp. 151914 ◽  
Author(s):  
Yu. I. Mazur ◽  
B. L. Liang ◽  
Zh. M. Wang ◽  
D. Guzun ◽  
G. J. Salamo ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Inas Quantum Dots

Optical storage behaviour in InAs quantum dots embedded in GaAs quantum well structure

2016 ◽  
Vol 11 (10) ◽  
pp. 623-626 ◽  
Author(s):  
Haidong Lu ◽  
Fangmin Guo ◽  
Bing Zhang ◽  
Wenguo Ning
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Optical Storage ◽  
Inas Quantum Dots ◽  
Quantum Well Structure

Quantum well and laser containing InAs quantum dots

2001 ◽  
Vol 223 (1-2) ◽  
pp. 92-98 ◽  
Author(s):  
Chin-An Chang ◽  
Cheng-Zu Wu ◽  
Pai-Yong Wang ◽  
Chiu-Yueh Liang ◽  
Fei-Chang Hwang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Inas Quantum Dots

Structural and optical properties of heterostructures with InAs quantum dots in an InGaAsN quantum well grown by molecular-beam epitaxy

2004 ◽  
Vol 38 (3) ◽  
pp. 340-343 ◽  
Author(s):  
I. P. Soshnikov ◽  
N. V. Kryzhanovskaya ◽  
N. N. Ledentsov ◽  
A. Yu. Egorov ◽  
V. V. Mamutin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Structural And Optical Properties ◽  
Inas Quantum Dots

Lengthening of the photoluminescence decay time of InAs quantum dots coupled to InGaAs∕GaAs quantum well

2006 ◽  
Vol 100 (5) ◽  
pp. 054313 ◽  
Author(s):  
Yu. I. Mazur ◽  
B. L. Liang ◽  
Zh. M. Wang ◽  
G. G. Tarasov ◽  
D. Guzun ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Decay Time ◽  
Inas Quantum Dots ◽  
Photoluminescence Decay

Enhanced response in InAs quantum dots in an InGaAs quantum well solar cells by anti-reflection coatings

2013 ◽  
Vol 1551 ◽  
pp. 155-161
Author(s):  
Y. F. Makableh ◽  
R. Vasan ◽  
J. C. Sarker ◽  
S. Lee ◽  
M. A. Khan ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Solar Cell ◽  
Quantum Well ◽  
Spectral Response ◽  
Sol Gel ◽  
Absorption Enhancement ◽  
Inas Quantum Dots ◽  
Current Voltage ◽  
Before And After

ABSTRACTA study on light absorption enhancement of an InAs quantum dots embedded into InxGa1-xAs quantum well with GaAs as a barrier solar cells was carried out. Solar cell devices were fabricated from different structures, which were grown by using molecular beam epitaxy, with the In mole fraction (x) varied between 0 – 25 %. Poly-L-Lysine ligands and ZnO sol-gel was used to modify the surface of the solar cells and act as anti-reflection coatings. The anti-reflection characteristic of the ligands and the sol-gel were investigated by measuring the solar cell characteristics before and after the solar cells surface modifications. The current-voltage characteristics were measured of the fabricated solar cells before and after Poly-L-Lysine and ZnO coatings. A significant enhancement on the order of 40 % of the solar cells performance was observed. This type of enhancement was observed in the power conversion efficiency, spectral response measurements, and external quantum efficiency.

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