Effect of dislocations on open circuit voltage in crystalline silicon solar cells

2006 ◽  
Vol 100 (9) ◽  
pp. 093708 ◽  
Author(s):  
Thomas Kieliba ◽  
Stephan Riepe ◽  
Wilhelm Warta
2011 ◽  
Vol 1288 ◽  
Author(s):  
Yasuko Hirayama ◽  
Hirotada Inoue ◽  
Kenta Matsuyama ◽  
Yasu umi Tsunomura ◽  
Daisuke Fujishima ◽  
...  

ABSTRACTIn order to reduce the power-generating cost of silicon solar cells, it is necessary to achieve a high conversion efficiency using a thinner crystalline silicon (c-Si) substrate. The HIT solar cell is an amorphous silicon (a-Si) /crystalline silicon (c-Si) heterojunction solar cell that makes it possible to realize excellent surface passivation and hence high open circuit voltage (Voc). In addition, its symmetrical structure and a low-temperature fabrication process that is under 200°C provide advantages in reducing thermal and mechanical stresses within the device so that it can easily be applied to thinner solar cells. We fabricated HIT solar cells using thin wafers from 58-98 μm, and achieved a 22.8% conversion efficiency with a HIT solar cell using a 98-μm-thick wafer, and an excellent Voc value of 0.747 V with a HIT solar cell using a 58-μm-thick wafer.


2006 ◽  
Vol 90 (20) ◽  
pp. 3557-3567 ◽  
Author(s):  
U. Gangopadhyay ◽  
K.H. Kim ◽  
S.K. Dhungel ◽  
U. Manna ◽  
P.K. Basu ◽  
...  

2021 ◽  
pp. 2100015
Author(s):  
Jingxuan Kang ◽  
Xinbo Yang ◽  
Wenzhu Liu ◽  
Jiang Liu ◽  
Hang Xu ◽  
...  

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