Effects of the material polarity on the green emission properties of InGaN∕GaN multiple quantum wells

2006 ◽  
Vol 89 (15) ◽  
pp. 151906 ◽  
Author(s):  
Yen-Lin Lai ◽  
Chuan-Pu Liu ◽  
Yung-Hsiang Lin ◽  
Ray-Ming Lin ◽  
Dong-Yuan Lyu ◽  
...  
2013 ◽  
Vol 22 (7) ◽  
pp. 076803 ◽  
Author(s):  
Wen-Yu Cao ◽  
Yong-Fa He ◽  
Zhao Chen ◽  
Wei Yang ◽  
Wei-Min Du ◽  
...  

1997 ◽  
Vol 482 ◽  
Author(s):  
K. C. Zeng ◽  
M. Smith ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
H. Tang ◽  
...  

AbstractEffects of well thickness and Si-doping on the photoluminescence (PL) emission properties of GaN/AlxGa1-xN (x ∼ 0.07) and InxGa1-xN/GaN (x ∼ 0.15–0.2) multiple quantum wells (MQWs) grown both by MOCVD and reactive MBE have been studied. The room temperature emission mechanisms have also been addressed.


2018 ◽  
Vol 112 (20) ◽  
pp. 201106 ◽  
Author(s):  
Wei Sun ◽  
Syed Ahmed Al Muyeed ◽  
Renbo Song ◽  
Jonathan J. Wierer ◽  
Nelson Tansu

2004 ◽  
Vol 241 (12) ◽  
pp. 2816-2819 ◽  
Author(s):  
H. K. Cho ◽  
T. E. Park ◽  
D. C. Kim ◽  
J. E. Shin ◽  
J. S. Lee

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