Coupling induced subband structures and collective single electron behavior in a single layer Si quantum dot array

2006 ◽  
Vol 100 (8) ◽  
pp. 083701
Author(s):  
L. W. Yu ◽  
K. J. Chen ◽  
L. C. Wu ◽  
J. Xu ◽  
W. Li ◽  
...  
1998 ◽  
Author(s):  
A. KOHNO ◽  
H. MURAKAMI ◽  
M. IKEDA ◽  
H. NISHIYAMA ◽  
S. MIYAZAKI ◽  
...  

1998 ◽  
Vol 507 ◽  
Author(s):  
C-M Park ◽  
J-H Jeon ◽  
M-S Lim ◽  
J-S Yoo ◽  
M-K Han

ABSTRACTWe propose a novel fabrication method for a room temperature operating single-electron memory using the size and location controlled poly-Si island by lithographic technique and excimer laser annealing.We have patterned tip shaped excimer laser windows and irradiated laser energy through windows for crystallizing amorphous silicon. As a result of laser energy, the poly-Si grains are growing from patterned window side so that the fine grain and isolated large poly-Si quantum dot are inherently formed by well-known ACSLG regime. The oxidation was then performed by RTP at 950 °C for 30 seconds in order to isolate quantum island and fine poly-Si grains for quantum dot. The peaks of the poly-oxide along the poly-Si grain boundaries were lowered during that oxidation and isolated the poly-Si grains and made oxide barriers.


2001 ◽  
Vol 90 (12) ◽  
pp. 6151-6155 ◽  
Author(s):  
Shu-Shen Li ◽  
Jian-Bai Xia ◽  
Jin-Long Liu ◽  
Fu-Hua Yang ◽  
Zhi-Chuan Niu ◽  
...  

2014 ◽  
Vol 112 (25) ◽  
Author(s):  
Marco Taucer ◽  
Lucian Livadaru ◽  
Paul G. Piva ◽  
Roshan Achal ◽  
Hatem Labidi ◽  
...  

JETP Letters ◽  
2016 ◽  
Vol 104 (12) ◽  
pp. 823-826 ◽  
Author(s):  
A. F. Zinovieva ◽  
V. A. Zinovyev ◽  
A. I. Nikiforov ◽  
V. A. Timofeev ◽  
A. V. Mudryi ◽  
...  

AIP Advances ◽  
2012 ◽  
Vol 2 (3) ◽  
pp. 032103 ◽  
Author(s):  
T. Nakaoka ◽  
K. Watanabe ◽  
N. Kumagai ◽  
Y. Arakawa

Solar Energy ◽  
2018 ◽  
Vol 164 ◽  
pp. 89-93 ◽  
Author(s):  
Gyea Young Kwak ◽  
Tae Gun Kim ◽  
Songwoung Hong ◽  
Ansoon Kim ◽  
Man Hyo Ha ◽  
...  

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